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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors BC635,116

Name: BC635,116
Brand: NXP Semiconductors
SKU: BC635,116
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC635,116

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: BC635,116.pdf

Description:: TRANS NPN 45V 1A TO-92-3

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Product details

Overview

BC635,116 from NXP Semiconductors is an NPN medium power transistor in SOT54A (SC-43A/TO-92) package, rated for 45 V V_CEO, 1 A continuous collector current, and 0.83 W total power dissipation at 25 °C ambient. It features two h_FE gain selections (63–160 or 100–250), supports linear voltage regulators and low-side switching, and operates across −65 °C to +150 °C junction temperature.

For engineers reviewing the BC635,116 datasheet, BC635,116 pinout, BC635,116 application, or BC635,116 equivalent, this page delivers verified electrical parameters, thermal derating behavior, TO-92-compatible pin configuration, and validated alternatives for discrete power control designs requiring stable DC current gain and robust saturation performance.

Technical Context

The BC635,116 is a silicon planar epitaxial NPN transistor optimized for medium-power linear and switching applications. Its structure enables high current handling (1 A I_C) with low V_CEsat (≤500 mV at I_C = 500 mA, I_B = 50 mA) and wide h_FE range (63–250), supporting precise biasing in regulator feedback paths and MOSFET gate drive stages.

Thermal design relies on FR4 PCB mounting with standard footprint (R_th(j-a) = 150 K/W); no heatsink pad required. The device exhibits f_T = 100–180 MHz and C_c = 6 pF, confirming suitability for audio-frequency amplification and <100 kHz switching without parasitic oscillation risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - Maximum safe collector-emitter voltage with base open; defines breakdown margin in linear regulator output stage.
I_C	1 A - Continuous DC collector current rating; supports load currents up to 1 A in low-side switch configurations.
h_FE	63–250 - DC current gain at V_CE = 2 V, I_C = 150 mA; enables predictable base drive sizing for stable amplification or switching.
V_CEsat	≤500 mV - Collector-emitter saturation voltage at I_C = 500 mA / I_B = 50 mA; minimizes conduction loss in saturated-switch operation.
P_tot	0.83 W - Total power dissipation at T_amb ≤ 25 °C on standard FR4 PCB; sets thermal limit for continuous operation without heatsinking.
f_T	100–180 MHz - Transition frequency at V_CE = 5 V, I_C = 50 mA; confirms usable bandwidth for audio amplifiers and fast-switching drivers.
R_th(j-a)	150 K/W - Junction-to-ambient thermal resistance on standard FR4 PCB; determines temperature rise per watt of dissipated power.

Pinout & Package

SOT54A (JEDEC TO-92 compatible) plastic single-ended leaded through-hole package with 3 leads; standardized pinout for manual or wave-solder assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased junction; requires current-limited drive (I_B ≤ 0.2 A peak) to avoid damage.
2	Collector	Main current-carrying terminal connected to load or supply rail; electrically tied to metal tab in SOT54A variant for improved thermal path.
3	Emitter	Reference terminal for bias network; typically grounded in common-emitter configurations or used as current-sense node.

Key Features

Feature	Design Value
High current capability	1 A continuous collector current supports direct driving of relays, LEDs, or MOSFET gates without external buffering.
Two h_FE selections	BC635-10 (63–160) and BC635-16 (100–250) variants allow precise gain matching in production batches for consistent loop gain in regulators.
High power dissipation	0.83 W rating on standard FR4 enables >700 mW continuous operation in compact through-hole layouts without forced air or heatsinks.
Low V_CEsat	≤500 mV ensures <0.5 W conduction loss at 1 A, critical for efficiency in linear pass elements and low-voltage switching.
Wide operating temperature	−65 °C to +150 °C junction range permits use in automotive under-hood, industrial motor controls, and outdoor power supplies.

Applications

Linear Voltage Regulators	Low-Side Switches
Use Scenario: Used as series pass transistor in adjustable 3-terminal linear regulators delivering up to 1 A output current. IC Role / Device Role / Timing Role: Acts as controllable current source modulated by error amplifier feedback; handles full load current and dissipates excess voltage drop. Use Value: Stable h_FE and low V_CEsat minimize output ripple and thermal drift while maintaining regulation accuracy over temperature.	Use Scenario: Switches resistive or inductive loads (e.g., solenoids, fans) referenced to ground in microcontroller-driven systems. IC Role / Device Role / Timing Role: Functions as saturated switch controlled by GPIO; collector connects load to V_CC, emitter to GND. Use Value: 1 A rating and 150 °C max junction temperature support reliable cycling of 500 mA–1 A loads without derating in enclosed enclosures.
MOSFET Drivers	Amplifiers
Use Scenario: Drives the gate of N-channel power MOSFETs in half-bridge or high-current DC-DC converter topologies. IC Role / Device Role / Timing Role: Provides fast turn-on/turn-off current pulses to charge/discharge MOSFET gate capacitance; placed between logic-level controller and power stage. Use Value: f_T ≥ 100 MHz and low output impedance enable sub-microsecond edge rates, reducing MOSFET switching losses.	Use Scenario: Configured as common-emitter audio preamplifier or signal buffer in analog sensor interfaces and instrumentation circuits. IC Role / Device Role / Timing Role: Amplifies small AC signals with fixed DC bias; collector load resistor sets gain and output impedance. Use Value: 63–250 h_FE range allows gain tuning via emitter degeneration, while 6 pF C_c prevents high-frequency instability in unity-gain configurations.

Linear Voltage Regulators

Low-Side Switches

Use Scenario: Used as series pass transistor in adjustable 3-terminal linear regulators delivering up to 1 A output current.

IC Role / Device Role / Timing Role: Acts as controllable current source modulated by error amplifier feedback; handles full load current and dissipates excess voltage drop.

Use Value: Stable h_FE and low V_CEsat minimize output ripple and thermal drift while maintaining regulation accuracy over temperature.

Use Scenario: Switches resistive or inductive loads (e.g., solenoids, fans) referenced to ground in microcontroller-driven systems.

IC Role / Device Role / Timing Role: Functions as saturated switch controlled by GPIO; collector connects load to V_CC, emitter to GND.

Use Value: 1 A rating and 150 °C max junction temperature support reliable cycling of 500 mA–1 A loads without derating in enclosed enclosures.

MOSFET Drivers

Amplifiers

Use Scenario: Drives the gate of N-channel power MOSFETs in half-bridge or high-current DC-DC converter topologies.

IC Role / Device Role / Timing Role: Provides fast turn-on/turn-off current pulses to charge/discharge MOSFET gate capacitance; placed between logic-level controller and power stage.

Use Value: f_T ≥ 100 MHz and low output impedance enable sub-microsecond edge rates, reducing MOSFET switching losses.

Use Scenario: Configured as common-emitter audio preamplifier or signal buffer in analog sensor interfaces and instrumentation circuits.

IC Role / Device Role / Timing Role: Amplifies small AC signals with fixed DC bias; collector load resistor sets gain and output impedance.

Use Value: 63–250 h_FE range allows gain tuning via emitter degeneration, while 6 pF C_c prevents high-frequency instability in unity-gain configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC636,116	PNP complement with identical V_CEO (45 V), I_C (1 A), and SOT54A package; h_FE range matches BC635-10/16 variants.	Used in complementary emitter-follower or push-pull output stages where PNP sourcing is required instead of NPN sinking.	Select BC636,116 only when circuit topology demands PNP polarity; not a functional replacement for BC635,116 in same position.
BCP54,115	SOT223 surface-mount package; higher thermal resistance (195 K/W vs. 150 K/W) but larger copper pad capability (0.96 W P_tot with 1 cm² pad).	Better suited for automated assembly and higher-power density boards where PCB real estate favors SMD over through-hole.	Choose BCP54,115 for new SMT designs needing >0.83 W dissipation; requires layout revision and requalification due to different footprint and thermal path.

Compared with BC635,116, BC636,116 provides complementary polarity for dual-rail designs but cannot substitute directly, while BCP54,115 offers superior thermal performance in SMT layouts at the cost of mechanical and soldering process incompatibility.

Availability

BC635,116 is available at Aetrix Electronics and suitable for linear voltage regulators, low-side switches, and MOSFET drivers requiring stable component supply, long-term obsolescence management, and traceable lot-level documentation.

Supply support for BC635,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, logic, and power discrete solutions for industrial, automotive, and consumer markets.

The BC635,116 belongs to NXP's legacy medium-power bipolar transistor family designed for cost-sensitive, reliability-critical linear and switching applications where TO-92 compatibility, predictable gain, and thermal robustness are essential.

FAQ

What is the maximum collector-emitter voltage rating for BC635,116?

The BC635,116 has a maximum collector-emitter voltage (V_CEO) rating of 45 V with the base open. This value is absolute maximum and must not be exceeded under any operating condition, including transient spikes. Derating is recommended for long-term reliability in high-temperature environments, especially when combined with high collector current.

Does BC635,116 have multiple h_FE gain options, and how are they identified?

Yes, BC635,116 is available in two h_FE selections: BC635-10 (63–160) and BC635-16 (100–250), both tested at V_CE = 2 V and I_C = 150 mA. These variants are marked as "C63510" and "C63516" respectively on the device body per Table 5 of the datasheet, enabling precise gain binning for production consistency.

What is the thermal resistance of BC635,116 on a standard FR4 PCB?

The BC635,116 has a junction-to-ambient thermal resistance (R_th(j-a)) of 150 K/W when mounted on a standard FR4 PCB with single-sided copper and tin plating. This value assumes the standard SOT54A footprint without extended copper pours; adding a 1 cm² collector pad reduces R_th(j-a) significantly but is not supported by the SOT54A package construction.

Can BC635,116 be used in switching applications above 100 kHz?

The BC635,116 has a transition frequency (f_T) of 100–180 MHz, indicating intrinsic high-frequency capability. However, its switching speed in practical circuits is limited by stored charge and package inductance. For reliable operation above 100 kHz, ensure base drive is strong (I_B ≥ 10% of I_C) and minimize trace inductance; verify performance with actual waveform measurements in the target application.

Is BC635,116 RoHS compliant and halogen-free?

BC635,116 complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The device uses lead-free matte tin termination and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for through-hole assembly. Full compliance documentation is available upon request from Aetrix Electronics' technical support team.

BC635,116 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 63 @ 150mA, 2V

Power - Max:: 830 mW

Frequency - Transition:: 180MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

BC635,116 FAQ

1.How can I place an order for BC635,116 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC635,116 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC635,116 reliable?

The price and inventory of BC635,116 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC635,116 is usually 5 days.

3.What payment methods are accepted for BC635,116?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC635,116 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC635,116?

BC635,116 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC635,116 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC635,116?

For technical support, including BC635,116 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC635,116 requirements.

6.How does Aetrix verify that BC635,116 is sourced from the original manufacturer or authorized distributors?

All BC635,116 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC635,116 meets industry standards.

7.What is the process for return or replacement of BC635,116?

All BC635,116 units undergo pre-shipment inspection (PSI). If there is an issue with BC635,116, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC635,116 part is unused and in its original packaging.

Return procedure for BC635,116:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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