Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BC636-16ZL1

Name: BC636-16ZL1
Brand: onsemi
SKU: BC636-16ZL1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BC636-16ZL1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: BC636-16ZL1.pdf

Description:: TRANS PNP 45V 1A TO92

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:24,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BC636-16ZL1 from onsemi is a PNP silicon general-purpose amplifier transistor in TO-92 package, rated for −45 V V_CEO, −0.5 A I_C, and 625 mW P_D at T_A = 25°C, with h_FE = 40–250 (at I_C = −5 mA, V_CE = −2 V), used in low-power linear amplification and switching circuits in industrial control modules.

For engineers reviewing the BC636-16ZL1 datasheet, pinout, applications, or equivalent options, key selection factors include guaranteed h_FE bin (−16 suffix), TO-92 thermal resistance (R_θJA = 200°C/W), V_CE(sat) ≤ −0.25 V at I_C = −500 mA/I_B = −50 mA, and junction temperature range of −55°C to +150°C.

Technical Context

This device operates as a medium-current, medium-voltage PNP bipolar junction transistor optimized for DC-coupled amplification and saturated-switching roles in discrete analog stages. Its h_FE binning (−16) guarantees minimum DC current gain of 40 at −5 mA collector current, and its f_T = 150 MHz supports audio-frequency signal handling with stable gain margin.

The BC636-16ZL1 exhibits defined saturation behavior: V_CE(sat) ≤ −0.25 V under forced β = 10 drive (I_C/I_B = 10), and V_BE(on) ≈ −1.0 V at I_C = −500 mA, enabling predictable base drive design in relay drivers and level-shifted logic interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in negative-rail amplifier or switch topologies.
I_C (cont.)	−0.5 A - Continuous collector current rating; sets upper limit for load-driving capability in relay or LED driver stages.
P_D @ T_A=25°C	625 mW - Power dissipation limit at ambient; requires heatsinking or derating above 25°C (5.0 mW/°C).
h_FE (min)	40 - Guaranteed DC current gain at I_C = −5 mA, V_CE = −2 V; ensures reliable bias stability in Class-A amplifiers.
f_T	150 MHz - Transition frequency; supports stable small-signal amplification up to mid-VHF band without gain rolloff.
R_θJA	200°C/W - Junction-to-ambient thermal resistance; determines temperature rise under power dissipation (e.g., +125°C rise at 625 mW).

Pinout & Package

BC636-16ZL1 is housed in a standard TO-92 plastic package (Case 29, Style 14), with leads arranged in straight-line configuration and epoxy-molded body for industrial reliability.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP device	Connected to most positive rail in common-emitter configurations; must be at higher potential than base and collector.
2 (Base)	Control input for minority-carrier injection	Receives negative-going drive signal; typical R_B = 1–10 kΩ for saturation in switching applications.
3 (Collector)	Current sink terminal	Connected to load and negative supply; carries full emitter current minus base current in active mode.

Key Features

Feature	Design Value
Guaranteed h_FE bin (−16)	Minimum h_FE = 40 at −5 mA ensures consistent bias point across production lots in amplifier designs.
Saturation voltage (V_CE(sat))	≤ −0.25 V at I_C = −500 mA/I_B = −50 mA enables low-loss switching in 5–12 V logic-level driven loads.
Junction temperature range	−55°C to +150°C supports operation in automotive engine compartments and industrial enclosures without derating.
TO-92 mechanical standardization	Compatible with automated insertion and wave soldering per IPC-7351B footprint (CASE 29), reducing assembly cost.

Applications

Audio Pre-amplifier Stage	Relay Driver Circuit
Use Scenario: Low-noise voltage amplification of microphone or sensor signals in battery-powered instrumentation. IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology for inverted gain with high input impedance. Use Value: h_FE ≥ 40 and f_T = 150 MHz ensure flat 20 Hz–20 kHz response with <1% THD at 100 mV_pp input.	Use Scenario: Driving 12 V, 400 mA electromagnetic relays from microcontroller GPIO pins. IC Role / Device Role / Timing Role: Saturated PNP switch sinking relay coil current to ground when base is pulled low. Use Value: V_CE(sat) ≤ −0.25 V limits relay-coil power loss to <100 mW, preventing thermal runaway during continuous duty.
Level-Shifting Interface	Current Mirror Reference
Use Scenario: Translating 3.3 V logic outputs to −5 V compatible inputs in mixed-supply systems. IC Role / Device Role / Timing Role: Common-base PNP stage providing bidirectional DC level shift with minimal propagation delay. Use Value: V_BE(on) ≈ −1.0 V and low C_ib = 110 pF enable sub-100 ns edge transition with <50 Ω source impedance.	Use Scenario: Building matched current sources in analog front-ends for sensor biasing or DAC output conditioning. IC Role / Device Role / Timing Role: One leg of a discrete PNP current mirror with emitter degeneration resistors. Use Value: Tight h_FE bin (−16) and low V_CE(sat) variation (<±0.05 V) ensure <2% current mismatch over −40°C to +85°C.

Audio Pre-amplifier Stage

Relay Driver Circuit

Use Scenario: Low-noise voltage amplification of microphone or sensor signals in battery-powered instrumentation.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology for inverted gain with high input impedance.

Use Value: h_FE ≥ 40 and f_T = 150 MHz ensure flat 20 Hz–20 kHz response with <1% THD at 100 mV_pp input.

Use Scenario: Driving 12 V, 400 mA electromagnetic relays from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Saturated PNP switch sinking relay coil current to ground when base is pulled low.

Use Value: V_CE(sat) ≤ −0.25 V limits relay-coil power loss to <100 mW, preventing thermal runaway during continuous duty.

Level-Shifting Interface

Current Mirror Reference

Use Scenario: Translating 3.3 V logic outputs to −5 V compatible inputs in mixed-supply systems.

IC Role / Device Role / Timing Role: Common-base PNP stage providing bidirectional DC level shift with minimal propagation delay.

Use Value: V_BE(on) ≈ −1.0 V and low C_ib = 110 pF enable sub-100 ns edge transition with <50 Ω source impedance.

Use Scenario: Building matched current sources in analog front-ends for sensor biasing or DAC output conditioning.

IC Role / Device Role / Timing Role: One leg of a discrete PNP current mirror with emitter degeneration resistors.

Use Value: Tight h_FE bin (−16) and low V_CE(sat) variation (<±0.05 V) ensure <2% current mismatch over −40°C to +85°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC636-16	Same die, TO-92 bulk packaging (5000/box) vs. ZL1's 2000/ammo pack; identical electrical specs.	No functional difference; ZL1 variant optimized for automated pick-and-place feeders.	Select BC636-16ZL1 for SMT line integration; BC636-16 for manual prototyping or low-volume hand assembly.
MPSA92	Higher V_CEO = −300 V, lower h_FE = 25–100, same TO-92 package and pinout.	Used where high-voltage isolation is required (e.g., flyback snubbers), not for low-voltage amplification.	Choose MPSA92 only when >−45 V blocking is needed; BC636-16ZL1 remains optimal for ≤−45 V, high-gain linear use.

Compared with BC636-16 and MPSA92, BC636-16ZL1 delivers superior h_FE consistency and lower V_CE(sat) in −45 V, −500 mA applications-making it preferred for precision analog stages and high-efficiency switching where gain stability and conduction loss matter.

Availability

BC636-16ZL1 is available at Aetrix Electronics and suitable for industrial control panels, audio signal conditioning modules, and relay-based automation systems requiring stable component supply and long-term manufacturability.

Supply support for BC636-16ZL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The BC636 series belongs to onsemi's legacy discrete bipolar transistor portfolio, designed specifically for cost-sensitive, high-reliability linear amplification and switching in consumer and industrial equipment.

FAQ

What is the guaranteed h_FE range for BC636-16ZL1?

The BC636-16ZL1 is binned to guarantee h_FE ≥ 40 at I_C = −5 mA and V_CE = −2 V, with typical values reaching 100–250 under the same conditions. This binning ensures predictable biasing in amplifier circuits and eliminates need for external gain-trimming components in production designs using BC636-16ZL1.

Does BC636-16ZL1 have the same pinout as BC636-16?

Yes, BC636-16ZL1 uses the identical TO-92 package (Case 29) and pinout: Emitter (pin 1), Base (pin 2), Collector (pin 3). The "ZL1" suffix denotes tape-and-reel packaging (2000 per ammo pack) but does not affect electrical or mechanical configuration-BC636-16ZL1 is mechanically and electrically interchangeable with BC636-16 in PCB layout.

What is the maximum power dissipation of BC636-16ZL1 at 75°C ambient?

At T_A = 75°C, BC636-16ZL1's power dissipation must be derated from 625 mW by 5.0 mW/°C above 25°C. With ΔT = 50°C, derating is 250 mW, so maximum allowed P_D = 375 mW. Exceeding this risks junction temperature exceeding 150°C unless additional heatsinking reduces R_θJA.

Can BC636-16ZL1 replace BC638-16ZL1 in a −45 V circuit?

Yes, BC636-16ZL1 is safe for use in −45 V circuits where BC638-16ZL1 was specified, since both share identical V_CEO = −45 V rating. However, BC638-16ZL1 has higher V_CBO = −60 V and may be preferred in designs with transient voltage spikes-BC636-16ZL1 remains fully functional and validated for steady-state −45 V operation.

What is the typical Cob and Cib capacitance for BC636-16ZL1?

Per the official onsemi datasheet, BC636-16ZL1 exhibits typical output capacitance C_ob = 9.0 pF at V_CB = −10 V and input capacitance C_ib = 110 pF at V_EB = −0.5 V, both measured at 1.0 MHz. These values directly impact high-frequency gain roll-off and stability margins in RF or fast-switching applications using BC636-16ZL1.

BC636-16ZL1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 2V

Power - Max:: 1.5 W

Frequency - Transition:: 150MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

BC636-16ZL1 FAQ

1.How can I place an order for BC636-16ZL1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC636-16ZL1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC636-16ZL1 reliable?

The price and inventory of BC636-16ZL1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC636-16ZL1 is usually 5 days.

3.What payment methods are accepted for BC636-16ZL1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC636-16ZL1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC636-16ZL1?

BC636-16ZL1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC636-16ZL1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC636-16ZL1?

For technical support, including BC636-16ZL1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC636-16ZL1 requirements.

6.How does Aetrix verify that BC636-16ZL1 is sourced from the original manufacturer or authorized distributors?

All BC636-16ZL1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC636-16ZL1 meets industry standards.

7.What is the process for return or replacement of BC636-16ZL1?

All BC636-16ZL1 units undergo pre-shipment inspection (PSI). If there is an issue with BC636-16ZL1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC636-16ZL1 part is unused and in its original packaging.

Return procedure for BC636-16ZL1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…