NXP Semiconductors BC638,116

Overview

BC638,116 from Nexperia (formerly Philips Semiconductors) is a PNP medium power bipolar junction transistor in TO-92 (SOT54) package, rated for −60 V V_CBO, −60 V V_CEO, and −1 A continuous collector current. It delivers DC current gain (h_FE) of 100–250 at I_C = −150 mA and is commonly used in audio amplifier output stages and low-frequency switching circuits.

For engineers reviewing the BC638,116 datasheet, BC638,116 pinout, BC638,116 application, or BC638,116 equivalent, key selection considerations include its PNP polarity, TO-92 thermal resistance (150 K/W), saturation voltage (≤−0.5 V at I_C = −500 mA), complementary NPN pairing with BC637, and suitability for linear amplification versus switching duty cycles.

Technical Context

The BC638,116 operates as a silicon PNP BJT with fixed emitter-base and collector-base junctions optimized for medium-power analog and switching applications up to 100 MHz transition frequency (f_T). Its design supports stable DC biasing at V_CE = −2 V with h_FE ≥100 across I_C = −150 mA, and maintains low leakage (I_CBO ≤−100 nA at 25 °C).

Thermal performance is defined for mounting on FR4 PCB without heatsink: maximum junction temperature is 150 °C, and total power dissipation is limited to 0.83 W at T_amb ≤25 °C. The device exhibits V_BE ≈ −1 V at I_C = −500 mA, enabling predictable base drive requirements in Class-A or push-pull configurations.

Key Specifications

Pinout & Package

BC638,116 is housed in a plastic single-ended leaded (through-hole) TO-92 package, also designated SOT54 or SC-43A, with 3 leads and standard 2.54 mm lead pitch. The package provides mechanical robustness and moderate thermal dissipation for board-level mounting without heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium power transistor applications.

Compared with BC638-16, BC638,116 shares identical limiting values and thermal behavior but lacks guaranteed h_FE binning; versus MPSA92, BC638,116 trades off voltage headroom for higher gain and lower saturation loss-making it preferable for audio and general-purpose medium-power PNP tasks.

Availability

BC638,116 is available at Aetrix Electronics and suitable for audio amplifier design, DC motor control, and LED current regulation requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for BC638,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in high-volume, high-reliability discrete and logic semiconductors, headquartered in Nijmegen, Netherlands.

The BC638,116 belongs to Nexperia's legacy medium-power BJT family designed for cost-sensitive, robust analog and switching applications in consumer, industrial, and automotive-qualified systems.

FAQ

What is the maximum collector-emitter voltage rating for BC638,116?

The BC638,116 has a maximum collector-emitter voltage (V_CEO) rating of −60 V with the base open. This value is specified under absolute maximum conditions per IEC 60134 and defines the upper voltage limit the device can block in common-emitter configuration without risk of avalanche breakdown. Operation beyond this rating may cause permanent damage.

Is BC638,116 pin-compatible with BC637?

No-BC638,116 is a PNP transistor while BC637 is its NPN complement; they share identical TO-92 (SOT54) package and pinout (base-collector-emitter = pins 1-2-3), but polarity reversal means they cannot be substituted directly. Their matching h_FE bins and thermal characteristics enable coordinated use in push-pull amplifier stages, not interchangeability.

What is the typical DC current gain (h_FE) of BC638,116 at 150 mA collector current?

At V_CE = −2 V and I_C = −150 mA, the BC638,116 exhibits a DC current gain (h_FE) ranging from 100 to 250. This range reflects standard manufacturing binning; the "116" suffix does not indicate a specific h_FE grade, unlike the "-16" variant which guarantees h_FE ≥100.

Can BC638,116 be used in switching applications?

Yes-the BC638,116 is suitable for medium-speed switching applications, with V_CE(sat) ≤−0.5 V at I_C = −500 mA / I_B = −50 mA and f_T = 100 MHz. Its switching speed is adequate for PWM motor control up to ~50 kHz and relay driving, though propagation delay and storage time are not characterized separately in the datasheet.

What is the thermal resistance from junction to ambient for BC638,116?

The BC638,116 has a thermal resistance from junction to ambient (R_th(j-a)) of 150 K/W when mounted on a standard FR4 printed-circuit board without heatsinking. This value assumes natural convection and defines how much the junction temperature rises above ambient per watt of dissipated power-critical for derating calculations above 25 °C ambient.