Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors BC639,116

Part No.:
BC639,116
Manufacturer:
NXP Semiconductors
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
AetrixBC639,116.pdf
Description:
TRANS NPN 80V 1A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,077

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC639,116 from NXP Semiconductors is an NPN medium power transistor in TO-92 (SOT54) package, rated for 80 V VCEO, 1 A continuous collector current, and 0.83 W total power dissipation at 25 °C ambient. It features two hFE gain selections (63–160 and 100–250), supports linear voltage regulation and low-side switching, and operates across −65 °C to +150 °C junction temperature range.

For engineers reviewing the BC639,116 datasheet, BC639,116 pinout, BC639,116 application, or BC639,116 equivalent, this device is selected for robust medium-power amplification and switching where thermal reliability on FR4 PCBs and defined DC gain spread are critical design factors.

Technical Context

The BC639,116 is a silicon planar epitaxial NPN transistor optimized for linear and switching operation in medium-current circuits. Its structure delivers stable hFE over 5–500 mA collector current range and low VCEsat of ≤500 mV at IC = 500 mA / IB = 50 mA, enabling efficient drive in MOSFET gate stages.

Thermal performance is defined for standard FR4 PCB mounting: Rth(j-a) = 150 K/W (no heatsink pad) and Rth(j-sp) = 40 K/W, supporting reliable operation up to 150 °C junction temperature. The device complies with IEC 60134 absolute maximum ratings and exhibits fT = 100–180 MHz at VCE = 5 V, IC = 50 mA.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 80 V - Maximum safe collector-emitter voltage with base open; defines breakdown margin in linear regulator or switch applications.
IC 1 A - Continuous DC collector current rating; sets upper limit for sustained load driving capability.
hFE (min–max) 63–250 - DC current gain range at VCE = 2 V, IC = 150 mA; enables predictable biasing across production lots.
VCEsat ≤500 mV - Collector-emitter saturation voltage at IC = 500 mA / IB = 50 mA; minimizes conduction loss in saturated-switch mode.
fT 100–180 MHz - Transition frequency at VCE = 5 V, IC = 50 mA; supports audio-frequency amplification and fast switching edge control.
Ptot 0.83 W - Total power dissipation at Tamb ≤25 °C on standard FR4 PCB; determines thermal derating curve for board-level layout.
Rth(j-a) 150 K/W - Junction-to-ambient thermal resistance on standard FR4; used to calculate ΔTj = Ptot × Rth(j-a) for thermal design.

Pinout & Package

BC639,116 uses the TO-92 (SOT54) through-hole plastic package per JEDEC TO-92 and JEITA SC-43A standards. Dimensions: 5.2 mm × 4.8 mm × 14.5 mm body, 2.54 mm lead pitch, 3.6 mm lead length. Leads are straight and tinned for wave solder compatibility.

Pin Circuit Role Design Meaning
1 Base Control terminal for forward-biased junction; requires current-limited drive to achieve target IC based on hFE.
2 Collector Main high-side current path; electrically connected to case tab in SOT54A variant but not in standard SOT54 (BC639,116).
3 Emitter Reference terminal for output current; tied to ground or low-side return path in common-emitter configurations.

Key Features

Feature Design Value
High current capability 1 A continuous collector current supports direct drive of small relays, LEDs, or MOSFET gates without external buffering.
Two hFE selections BC639-10 (63–160) and BC639-16 (100–250) variants allow precise bias network tuning for stability or gain-critical amplifier stages.
High power dissipation 0.83 W rating on standard FR4 enables >700 mW usable power before thermal derating begins, suitable for non-heatsinked linear regulators.
Low VCEsat ≤500 mV at IC/IB = 10 ensures <5% voltage drop in saturated switch mode, improving efficiency in low-voltage logic-level interfaces.
Wide operating temperature −65 °C to +150 °C junction range supports industrial and automotive under-hood environments without derating penalties.

Applications

Linear Voltage Regulators Low-Side Switches

Use Scenario: Discrete series pass element in adjustable 3-terminal linear regulators delivering up to 1 A output.

IC Role / Device Role / Timing Role: NPN series pass transistor controlling output voltage via base bias from error amplifier.

Use Value: 80 V VCEO provides headroom for 24 V input rails; 1 A IC rating matches typical regulator output capacity.

Use Scenario: Ground-referenced switching of resistive or inductive loads (e.g., solenoids, fans) in microcontroller-driven systems.

IC Role / Device Role / Timing Role: Low-side current sink controlled by MCU GPIO through base resistor.

Use Value: 1.5 A ICM peak rating handles inrush currents; ≤500 mV VCEsat limits power loss during ON state.

MOSFET Drivers Amplifiers

Use Scenario: Level-shifting and current-boosting stage between low-voltage logic (e.g., 3.3 V MCU) and N-channel power MOSFET gate.

IC Role / Device Role / Timing Role: Medium-speed NPN switch providing ≥100 mA peak gate charge current to reduce MOSFET turn-on time.

Use Value: 180 MHz fT ensures sub-microsecond switching transitions; 1 A IC supports fast gate charging of 10 nF loads.

Use Scenario: Audio preamplifier or signal conditioning stage in instrumentation requiring low-noise, medium-gain amplification.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier biased in active region for linear voltage gain.

Use Value: hFE range of 63–250 allows stable DC bias design; 6 pF Cc minimizes high-frequency roll-off in 20 kHz bandwidth circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC639-16,116 Same package and VCEO/IC ratings, but guaranteed hFE min = 100 (vs. 63 for BC639,116); tighter gain distribution. Preferred where higher minimum gain improves bias stability in amplifier or regulator feedback loops. Select BC639-16,116 when circuit sensitivity to hFE variation demands guaranteed ≥100 gain at 150 mA.
BC640,116 PNP complement with identical package, VCEO = 80 V, IC = 1 A, but opposite polarity and inverted pinout (emitter/base/collector). Used in complementary emitter-follower or push-pull output stages where matched PNP/NPN pairing is required. Choose BC640,116 only for complementary symmetry designs; not a functional replacement due to polarity inversion.

Compared with BC639,116, the BC639-16,116 offers higher guaranteed hFE for improved bias predictability, while BC640,116 serves strictly as a polarity-matched complement-not a drop-in substitute-requiring schematic and layout revision.

Availability

BC639,116 is available at Aetrix Electronics and suitable for linear voltage regulators, low-side switches, MOSFET drivers, and amplifiers requiring stable component supply across industrial, automotive, and embedded power management programs.

Supply support for BC639,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The BC639,116 belongs to NXP's legacy bipolar transistor product line designed for cost-sensitive, medium-power analog and discrete switching applications where reliability, thermal robustness, and standardized packaging are essential.

FAQ

What is the package type and lead configuration of BC639,116?

The BC639,116 uses the TO-92 (SOT54) through-hole plastic package with three straight leads. Pin 1 is base, pin 2 is collector, and pin 3 is emitter. Lead pitch is 2.54 mm, and the device is supplied in tape-and-reel format with wide-pitch taping per ordering code -116.

Does BC639,116 have multiple hFE gain options, and how are they marked?

Yes, BC639,116 corresponds to the standard BC639 gain group (hFE = 63–250 at IC = 150 mA). It is marked "C639" on the package. The BC639-10 variant (63–160) is marked "C63910", and BC639-16 (100–250) is marked "C63916"; BC639,116 itself is not gain-binned beyond the base specification.

What is the maximum allowable power dissipation for BC639,116 on a standard PCB?

BC639,116 has a total power dissipation (Ptot) rating of 0.83 W at ambient temperature ≤25 °C when mounted on a standard FR4 PCB with single-sided copper and no collector heatsink pad. Derating is required above 25 °C at 6.6 mW/°C, per the published power derating curve.

Can BC639,116 be used as a direct replacement for BC639-16,116?

No-BC639,116 and BC639-16,116 are distinct orderable parts with different hFE guarantees. BC639,116 meets the base BC639 specification (hFE min = 63), while BC639-16,116 guarantees hFE ≥100. Substitution may cause bias instability in gain-critical circuits unless verified.

What is the thermal resistance from junction to ambient for BC639,116?

The thermal resistance from junction to ambient (Rth(j-a)) for BC639,116 is 150 K/W when mounted on a standard FR4 PCB with single-sided copper and no collector heatsink pad. This value is used to calculate junction temperature rise: Tj = Tamb + (Ptot × 150 K/W).

BC639,116 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
80 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Power - Max:
830 mW
Frequency - Transition:
180MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

BC639,116 FAQ

1.How can I place an order for BC639,116 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC639,116 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC639,116 reliable?

The price and inventory of BC639,116 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC639,116 is usually 5 days.

3.What payment methods are accepted for BC639,116?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC639,116 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC639,116?

BC639,116 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC639,116 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC639,116?

For technical support, including BC639,116 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC639,116 requirements.

6.How does Aetrix verify that BC639,116 is sourced from the original manufacturer or authorized distributors?

All BC639,116 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC639,116 meets industry standards.

7.What is the process for return or replacement of BC639,116?

All BC639,116 units undergo pre-shipment inspection (PSI). If there is an issue with BC639,116, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC639,116 part is unused and in its original packaging.

Return procedure for BC639,116:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC639,116 Tags

  • BC639,116
  • BC639,116 PDF
  • BC639,116 Datasheet
  • BC639,116 Specifications
  • BC639,116 Images
  • NXP Semiconductors
  • NXP Semiconductors BC639,116
  • Buy BC639,116
  • BC639,116 Price
  • BC639,116 Distributor
  • BC639,116 Supplier
  • BC639,116 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER