Infineon Technologies BC80716E6327

Overview

BC807-16E6327 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor in SOT-23 package, rated for 45 V V_CEO, 500 mA I_C, and 330 mW P_tot at T_S ≤ 79 °C, with h_FE = 100–160 (I_C = 100 mA, V_CE = 1 V), and V_CE(sat) ≤ 0.7 V (I_C = 500 mA, I_B = 50 mA). It serves as a low-voltage switching or linear amplification device in discrete power control stages of consumer power supplies and LED drivers.

For engineers reviewing the BC807-16E6327 datasheet, BC807-16E6327 pinout, BC807-16E6327 application, or BC807-16E6327 equivalent, key selection criteria include verified DC current gain group (h_FE-grp. 16), guaranteed V_CE(sat) under high-current switching, thermal resistance R_thJS ≤ 215 K/W, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined breakdown limits: V_(BR)CEO = 45 V (BC807 series), V_(BR)CBO = 50 V, and V_(BR)EBO = 5 V. Its f_T = 200 MHz (I_C = 50 mA, V_CE = 5 V) supports moderate-speed switching up to ~100 kHz in Class-A/B amplifier stages.

Thermal design relies on junction-to-soldering-point resistance R_thJS ≤ 215 K/W for standard SOT-23 mounting, and its h_FE maintains ≥100 across –40 °C to 105 °C at I_C = 100 mA, enabling stable biasing in ambient-variable industrial sensor interfaces.

Key Specifications

Pinout & Package

BC807-16E6327 uses the industry-standard SOT-23 surface-mount package (3-pin, 1.3 mm × 2.9 mm footprint), optimized for automated placement and reflow soldering in high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-16LT1G, BC807-16E6327 offers automotive-grade reliability out-of-box; versus MMBT807, it shares identical qualification scope but differs in traceability documentation and lot-level test reporting per Infineon's manufacturing protocol.

Availability

BC807-16E6327 is available at Aetrix Electronics and suitable for LED driver stages, power supply enable switches, audio preamp bias networks, and automotive door lock actuator drivers requiring stable component supply across extended temperature ranges and long-lifecycle programs.

Supply support for BC807-16E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

BC807-16E6327 belongs to Infineon's BC807/BC808 family of general-purpose PNP/NPN transistors designed for cost-sensitive, high-reliability discrete signal and power switching in automotive, industrial, and consumer applications.

FAQ

Is BC807-16E6327 pin-compatible with BC817-16?

No - BC807-16E6327 is PNP while BC817-16 is NPN; they share identical SOT-23 pinout (E-B-C), but polarity reversal requires complementary circuit redesign. Their pin assignments (1=E, 2=B, 3=C) match, enabling mechanical drop-in use only in push-pull or differential topologies where both types are intentionally paired.

What is the maximum allowable base current for continuous operation?

The absolute maximum rated base current I_B is 100 mA per datasheet Section 2. Exceeding this risks metallization failure or bond wire damage. For reliable 500 mA collector switching, design base drive to deliver 50 mA (h_FE min ≈ 10) with 2× margin, limiting duty cycle or adding series resistance to prevent thermal runaway.

Does BC807-16E6327 support pulsed operation beyond 500 mA?

Yes - peak collector current I_CM is rated at 1000 mA for pulse widths <300 µs and duty cycle <2%. Pulse derating curves in Figure 7 confirm P_tot(max)/P_tot(DC) = 2.5 at t_p = 100 µs. Ensure layout minimizes inductance and base drive rise/fall times remain <100 ns to avoid secondary breakdown.

How does thermal resistance change with PCB copper area?

R_thJS ≤215 K/W assumes minimal copper (0.5 mm² pad per pin); adding 100 mm² of 2-oz copper connected to all three pins reduces effective R_thJA to ~120 K/W. However, R_thJS itself is fixed by package construction - improved board layout lowers R_thJA, not R_thJS, directly impacting junction temperature rise under load.