Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi BC807-16LT3

Name: BC807-16LT3
Brand: onsemi
SKU: BC807-16LT3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BC807-16LT3

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BC807-16LT3.pdf

Description:: TRANS PNP 45V 0.5A SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,986

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BC807-16LT3 from onsemi is a PNP silicon general-purpose transistor in SOT-23 package, rated for −45 V V_CEO, −500 mA I_C, and 225 mW power dissipation on FR-5 board at 25°C. It delivers h_FE = 100–250 at I_C = −100 mA/V_CE = −1.0 V and supports switching and linear amplification in low-voltage bias networks.

For engineers reviewing the BC807-16LT3 datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed h_FE bin (16), SOT-23 thermal derating profile, and −0.7 V V_CE(sat) at −500 mA/−50 mA drive - critical for discrete load switching and level translation circuits.

Technical Context

The BC807-16LT3 operates as a medium-current PNP bipolar junction transistor with fixed gain binning (h_FE = 100–250), optimized for DC-coupled switching and analog amplification where base-driven current control is required. Its −5.0 V V_EBO rating enables safe operation with modest emitter-base reverse bias, and f_T = 100 MHz supports moderate-speed digital switching up to ~10 MHz.

Thermal performance is defined for two mounting conditions: 556°C/W R_JA on FR-5 board and 417°C/W on alumina substrate. The device uses standard SOT-23 leadframe construction with Pb-free plating, and its electrical characteristics are fully specified at T_A = 25°C with derating above that temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V: Maximum collector-emitter voltage before breakdown under open-base condition; sets upper limit for supply rail compatibility in PNP switch designs.
I_C (cont.)	−500 mA: Continuous collector current rating; defines maximum steady-state load current capability without forced cooling.
h_FE (bin 16)	100–250 at −100 mA/−1.0 V: Guaranteed DC current gain range ensures predictable base drive requirements in amplifier or saturated switch configurations.
V_CE(sat)	≤ −0.7 V at −500 mA/−50 mA: Low saturation voltage minimizes conduction loss and heat generation in high-duty-cycle switching applications.
f_T	100 MHz: Transition frequency confirms usable bandwidth for signal amplification or fast edge switching up to ~10 MHz.
R_JA (FR-5)	556°C/W: Thermal resistance determines junction temperature rise per milliwatt dissipated; used to calculate max safe power at elevated ambient temperatures.

Pinout & Package

SOT-23 (Case 318, Style 6) surface-mount plastic package with gull-wing leads; 1.0 mm × 0.75 mm × 0.062 in footprint; RoHS-compliant Pb-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative current relative to emitter to turn on device.
2	Emitter	Current source terminal in PNP configuration; connected to higher potential (e.g., V_CC) in common-emitter switch layouts.
3	Collector	Current sink terminal; output node tied to load and ground in typical high-side switch topology.

Key Features

Feature	Design Value
Pb-free SOT-23 package	Complies with RoHS Directive 2011/65/EU; compatible with standard reflow soldering profiles including JEDEC J-STD-020.
Guaranteed h_FE bin (16)	100–250 gain range eliminates need for external gain trimming or feedback compensation in fixed-gain amplifier stages.
Low V_CE(sat)	≤ −0.7 V at rated I_C/I_B reduces power loss by >30% vs. generic PNP transistors with V_CE(sat) > −1.0 V under same conditions.
−5.0 V V_EBO	Enables safe operation with emitter grounded and base pulled below ground (e.g., in level-shifting interfaces with negative logic swings).

Applications

Automotive Body Control Module	Industrial PLC Input Conditioning
Use Scenario: Driving 12 V relay coils and LED indicators from microcontroller GPIO pins via level-shifted PNP switches. IC Role / Device Role / Timing Role: Discrete PNP switch providing high-side current sourcing with logic-level compatible base drive. Use Value: −45 V V_CEO and −500 mA I_C ensure robust operation across automotive load dump transients and inductive kickback events.	Use Scenario: Converting 24 V industrial sensor signals to 3.3 V/5 V logic levels for FPGA or MCU inputs using emitter-follower or common-emitter configurations. IC Role / Device Role / Timing Role: General-purpose PNP transistor used in active pull-up, voltage translation, and current-limiting front-end stages. Use Value: Guaranteed h_FE bin and −0.7 V V_CE(sat) enable precise threshold setting and minimal voltage drop in signal conditioning paths.
Consumer Appliance Power Sequencing	Medical Diagnostic Equipment Bias Networks
Use Scenario: Controlling sequential activation of 5 V and 3.3 V LDO enable lines during system power-up using cascaded PNP switches. IC Role / Device Role / Timing Role: Medium-current PNP switch implementing controlled voltage rail sequencing with minimal component count. Use Value: SOT-23 footprint and 225 mW PD allow integration into space-constrained PCBs while maintaining thermal margin at 50°C ambient.	Use Scenario: Providing stable bias currents for precision op-amp input stages and photodiode transimpedance amplifiers in portable diagnostic tools. IC Role / Device Role / Timing Role: Linear-mode PNP current source delivering accurate, temperature-stable reference currents. Use Value: Tight h_FE bin and −55 to +150°C T_J rating support consistent performance across clinical operating environments.

Automotive Body Control Module

Industrial PLC Input Conditioning

Use Scenario: Driving 12 V relay coils and LED indicators from microcontroller GPIO pins via level-shifted PNP switches.

IC Role / Device Role / Timing Role: Discrete PNP switch providing high-side current sourcing with logic-level compatible base drive.

Use Value: −45 V V_CEO and −500 mA I_C ensure robust operation across automotive load dump transients and inductive kickback events.

Use Scenario: Converting 24 V industrial sensor signals to 3.3 V/5 V logic levels for FPGA or MCU inputs using emitter-follower or common-emitter configurations.

IC Role / Device Role / Timing Role: General-purpose PNP transistor used in active pull-up, voltage translation, and current-limiting front-end stages.

Use Value: Guaranteed h_FE bin and −0.7 V V_CE(sat) enable precise threshold setting and minimal voltage drop in signal conditioning paths.

Consumer Appliance Power Sequencing

Medical Diagnostic Equipment Bias Networks

Use Scenario: Controlling sequential activation of 5 V and 3.3 V LDO enable lines during system power-up using cascaded PNP switches.

IC Role / Device Role / Timing Role: Medium-current PNP switch implementing controlled voltage rail sequencing with minimal component count.

Use Value: SOT-23 footprint and 225 mW PD allow integration into space-constrained PCBs while maintaining thermal margin at 50°C ambient.

Use Scenario: Providing stable bias currents for precision op-amp input stages and photodiode transimpedance amplifiers in portable diagnostic tools.

IC Role / Device Role / Timing Role: Linear-mode PNP current source delivering accurate, temperature-stable reference currents.

Use Value: Tight h_FE bin and −55 to +150°C T_J rating support consistent performance across clinical operating environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC807-16LT1	Same die, identical electrical specs, but shipped in 3,000-piece tape-and-reel vs. 10,000-piece for BC807-16LT3.	No functional difference; suited for lower-volume prototyping or small-batch production runs.	Select BC807-16LT1 when smaller reel size aligns with assembly line feeder constraints or inventory turnover goals.
MMBT807	Same SOT-23 package and PNP polarity, but h_FE bin unspecified (min 100); no guaranteed gain range or V_CE(sat) spec at −500 mA.	Acceptable for non-critical switching where gain variation is tolerable, but not suitable for precision current sources or saturated-switch designs requiring guaranteed V_CE(sat).	Choose MMBT807 only if cost sensitivity outweighs need for guaranteed h_FE and saturation voltage performance.

Compared with BC807-16LT1 and MMBT807, the BC807-16LT3 provides identical electrical performance to BC807-16LT1 but in higher-volume packaging, while offering tighter gain binning and validated saturation behavior versus MMBT807 - making it optimal for production-grade designs requiring consistency and thermal predictability.

Availability

BC807-16LT3 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input conditioning, and consumer appliance power sequencing requiring stable component supply and long-term manufacturability.

Supply support for BC807-16LT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The BC807 series belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliability, consistency, and ease of use in discrete switching and amplification roles across cost-sensitive and thermally constrained designs.

FAQ

What is the maximum continuous collector current rating for BC807-16LT3?

The BC807-16LT3 has a maximum continuous collector current (I_C) rating of −500 mA at T_A = 25°C. This rating assumes operation on an FR-5 board with appropriate thermal derating applied above 25°C (−1.8 mW/°C). Exceeding this current without adequate heatsinking risks thermal runaway or permanent degradation of the BC807-16LT3.

Does BC807-16LT3 have a guaranteed DC current gain range?

Yes, the BC807-16LT3 is binned to h_FE = 100–250 when tested at I_C = −100 mA and V_CE = −1.0 V. This guaranteed gain range is explicitly defined in the onsemi datasheet and distinguishes the BC807-16LT3 from un-binned alternatives like MMBT807. Designers can rely on this specification for accurate base resistor calculations in the BC807-16LT3.

What is the saturation voltage of BC807-16LT3 under full-load conditions?

The BC807-16LT3 exhibits V_CE(sat) ≤ −0.7 V when operated at I_C = −500 mA and I_B = −50 mA. This value is measured under standardized test conditions and reflects worst-case conduction loss in saturated switch mode. It directly impacts power efficiency and thermal design margins for the BC807-16LT3 in high-duty-cycle applications.

Is BC807-16LT3 RoHS-compliant and Pb-free?

Yes, the BC807-16LT3 is manufactured with a Pb-free finish and complies with the EU RoHS Directive 2011/65/EU. Its SOT-23 package uses lead-free plating and is qualified for standard reflow soldering processes per JEDEC J-STD-020. This compliance applies to both BC807-16LT3 and its Pb-free variant BC807-16LT3G.

How does the thermal resistance of BC807-16LT3 vary between board types?

The BC807-16LT3 has R_JA = 556°C/W on FR-5 board and R_JA = 417°C/W on 99.5% alumina substrate (0.4 × 0.3 × 0.024 in), both measured at T_A = 25°C. This 25% reduction in thermal resistance on ceramic substrate allows higher power dissipation before reaching T_J = 150°C - a critical consideration for thermally demanding implementations of the BC807-16LT3.

BC807-16LT3 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 1V

Power - Max:: 300 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

BC807-16LT3 FAQ

1.How can I place an order for BC807-16LT3 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC807-16LT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC807-16LT3 reliable?

The price and inventory of BC807-16LT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC807-16LT3 is usually 5 days.

3.What payment methods are accepted for BC807-16LT3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC807-16LT3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC807-16LT3?

BC807-16LT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC807-16LT3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC807-16LT3?

For technical support, including BC807-16LT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC807-16LT3 requirements.

6.How does Aetrix verify that BC807-16LT3 is sourced from the original manufacturer or authorized distributors?

All BC807-16LT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC807-16LT3 meets industry standards.

7.What is the process for return or replacement of BC807-16LT3?

All BC807-16LT3 units undergo pre-shipment inspection (PSI). If there is an issue with BC807-16LT3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC807-16LT3 part is unused and in its original packaging.

Return procedure for BC807-16LT3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…