Nexperia USA Inc. BC807-16W-QX

Overview

BC807-16W-Q from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −45 V V_CEO, −500 mA I_C, and DC current gain (h_FE) of 100–250 at V_CE = −1 V and I_C = −100 mA. It delivers low V_CE(sat) of −700 mV at I_C = −500 mA / I_B = −50 mA and is AEC-Q101 qualified for automotive use in discrete switching and amplification stages.

For engineers reviewing the BC807-16W-Q datasheet, BC807-16W-Q pinout, BC807-16W-Q application, or BC807-16W-Q equivalent, this device serves as a compact, high-reliability PNP switch in space-constrained automotive control modules, LED drivers, and power management sub-circuits where thermal performance and production-grade qualification are required.

Technical Context

This PNP BJT operates with open-base collector-emitter breakdown voltage of −45 V and emitter-base breakdown voltage of −5 V, supporting robust operation in negative-rail bias configurations. Its pulsed peak collector current reaches −1 A (t_p ≤ 1 ms), enabling short-duration surge handling in load-switching applications.

The device exhibits typical transition frequency f_T of 80 MHz at V_CE = −5 V, I_C = −10 mA, and 100 MHz test frequency, confirming suitability for low-to-moderate speed switching - not RF or high-frequency analog amplification. Thermal resistance R_th(j-a) is 625 K/W on standard FR4 PCB, requiring careful layout for sustained −500 mA operation.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: ultra-compact 3-lead outline measuring 2.2 mm × 1.35 mm × 0.95 mm (L × W × H), optimized for high-density PCB layouts and reflow soldering per IPC-J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-16W-Q, BC807-16LT1G offers superior thermal dissipation in less space-constrained layouts, while MMBT3906-7-F trades automotive qualification and voltage headroom for lower unit cost in benign environments - making BC807-16W-Q the optimal choice when AEC compliance and −45 V robustness are non-negotiable.

Availability

BC807-16W-Q is available at Aetrix Electronics and suitable for automotive body electronics, industrial LED drivers, and medical sensor bias supplies requiring stable component supply across multi-year production cycles.

Supply support for BC807-16W-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.

The BC807W-Q series belongs to Nexperia's AEC-Q101-qualified general-purpose transistor product line, engineered specifically for robust, space-efficient switching and amplification in automotive control modules and safety-critical subsystems.

FAQ

What is the maximum allowable junction temperature for BC807-16W-Q?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in Table 6 of the Nexperia datasheet. Operation beyond this limit risks permanent degradation of h_FE and increased leakage. Derating is required above 25 °C ambient, with total power dissipation dropping to zero at 150 °C ambient for the standard footprint configuration.

Does BC807-16W-Q support pulse operation above its continuous I_C rating?

Yes - the device supports −1 A peak collector current (I_CM) for single pulses ≤1 ms at T_amb = 25 °C, as defined in Table 6. This enables brief inrush current handling in relay or solenoid drivers, provided duty cycle remains below 2 % and average power stays within P_tot limits.

How does the h_FE binning of BC807-16W-Q compare to BC807-25W-Q?

BC807-16W-Q is binned for h_FE = 100–250 at V_CE = −1 V and I_C = −100 mA, while BC807-25W-Q is binned for 160–400 under identical conditions. The "16" and "25" denote minimum h_FE values, allowing designers to select tighter gain distributions for predictable base drive design across production lots.

Can BC807-16W-Q be used in linear amplifier configurations?

Yes - its h_FE stability across I_C (Fig. 4), low V_BE drift (−2 mV/K), and specified f_T support Class-A and AB small-signal amplification up to ~10 MHz. However, it is not optimized for low-noise audio; use only where gain accuracy and thermal stability outweigh noise figure requirements.