Infineon Technologies BC807-25E6433

Overview

BC807-25E6433 from Nexperia is a PNP silicon general-purpose audio-frequency transistor with 45 V V_CEO, 500 mA I_C, 250 h_FE (at 100 mA, 1 V), 0.7 V V_CE(sat) (at 500 mA/50 mA), and SOT23 package - used in low-voltage switching and linear amplification stages of power management and signal conditioning circuits.

For engineers reviewing the BC807-25E6433 datasheet, BC807-25E6433 pinout, BC807-25E6433 application, or BC807-25E6433 equivalent, key selection criteria include guaranteed h_FE group 25, AEC-Q101 qualification for automotive use, RoHS-compliant lead-free packaging, and thermal resistance R_thJS ≤ 215 K/W at T_S ≤ 79 °C.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain tightly binned to h_FE = 160–250 at I_C = 100 mA and V_CE = 1 V. Its low V_CE(sat) of ≤ 0.7 V at I_C/I_B = 500 mA/50 mA enables efficient switching in 3.3 V–5 V logic-level driven loads.

Designed for general AF applications, it features complementary NPN pairing with BC817-25/BC817-25W and supports operation up to 150 °C junction temperature. The SOT23 package provides surface-mount compatibility with validated thermal performance under pulsed and continuous DC conditions.

Key Specifications

Pinout & Package

Package: SOT23 - standard 3-pin surface-mount plastic package with 1.3 mm × 2.9 mm footprint, JEDEC TO-236AB outline, and gull-wing leads for reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-25,115, E6433 offers identical performance in a standardized reel format; versus MMBT807, it delivers tighter h_FE control and lower conduction loss - critical for automotive and medical designs requiring long-term parametric stability.

Availability

BC807-25E6433 is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor signal conditioning, and consumer power management requiring stable component supply across extended production lifecycles.

Supply support for BC807-25E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade components and energy-efficient solutions.

The BC807 series belongs to Nexperia's general-purpose bipolar transistor product line, engineered for robust performance in automotive, industrial, and consumer applications where reliability, thermal stability, and AEC-Q101 compliance are mandatory.

FAQ

Is BC807-25E6433 pin-compatible with BC817-25?

No - BC807-25E6433 is a PNP transistor with emitter-base-collector pinout (1-E, 2-B, 3-C) in SOT23, while BC817-25 is an NPN device with collector-base-emitter pinout (1-C, 2-B, 3-E). Swapping them without circuit redesign will cause functional failure due to reversed polarity and current flow direction.

What is the maximum operating temperature for continuous use?

The BC807-25E6433 has a maximum junction temperature (T_j) of 150 °C and a storage temperature range of –65 °C to +150 °C. For continuous DC operation, thermal design must ensure T_j stays within this limit - typically requiring board-level copper area or ambient derating when P_tot exceeds 200 mW at T_S > 60 °C.

Does BC807-25E6433 support pulse operation beyond its DC ratings?

Yes - the device supports pulsed collector current up to 1000 mA (I_CM) with duty cycle < 2% and pulse width < 300 µs. Permissible pulse load curves in the datasheet confirm P_tot(max)/P_tot(DC) ratios up to 10× for short durations, enabling brief surge handling in motor driver or relay coil drive applications.

How does the h_FE group 25 affect base resistor selection?

With h_FE guaranteed between 160 and 250 at I_C = 100 mA, base resistors should be sized using h_FE(min) = 160 to ensure saturation under worst-case gain. For example, driving 500 mA load requires ≥ 50 mA base current - thus R_B ≤ (V_GPIO – V_BE(sat))/50 mA, assuming V_BE(sat) ≈ 1.2 V.