Infineon Technologies BC80725WE6327BTSA1

Overview

BC807-25WE6327BTSA1 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor in SOT-323 (SC-70) package, rated for 45 V V_CEO, 500 mA I_C, and 250 mW P_tot at T_S ≤ 130 °C, with h_FE = 160–250 at I_C = 100 mA, V_CE = 1 V, used in low-voltage switching and linear amplification stages of automotive body control modules.

For engineers reviewing the BC807-25WE6327BTSA1 datasheet, BC807-25WE6327BTSA1 pinout, BC807-25WE6327BTSA1 application, or BC807-25WE6327BTSA1 equivalent, key selection criteria include guaranteed h_FE group 25 performance across temperature, low V_CE(sat) ≤ 0.7 V at I_C = 500 mA/I_B = 50 mA, AEC-Q101 qualification, RoHS-compliant SOT-323 packaging, and complementary NPN pairing with BC817-25W.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain specified across three h_FE groups (16/25/40); BC807-25W belongs to group 25, delivering 160–250 h_FE at 100 mA collector current and 1 V V_CE. Its f_T = 200 MHz supports high-speed switching up to ~10 MHz in digital logic interfaces.

Thermal design relies on R_thJS ≤ 80 K/W (junction-to-soldering-point), enabling stable operation at T_j ≤ 150 °C. The device features low V_BE(sat) ≤ 1.2 V and V_CE(sat) ≤ 0.7 V under heavy drive, reducing conduction losses in power-switching nodes.

Key Specifications

Pinout & Package

Package: SOT-323 (SC-70), surface-mount, 3-pin plastic case with gull-wing leads; footprint compatible with JEDEC MO-203-DA.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-25WE6327BTSA1, BC807-25LT1G trades thermal performance for footprint compatibility, while MMBT3906LT1G sacrifices AEC-Q101 compliance and h_FE consistency for broader availability and lower unit cost.

Availability

BC807-25WE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning, and consumer appliance power sequencing requiring stable component supply, AEC-Q101 assurance, and SOT-323 thermal performance.

Supply support for BC807-25WE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

This device belongs to Infineon's BC807/BC808 family of AEC-Q101-qualified general-purpose PNP transistors designed for robust, high-reliability switching and amplification in automotive and industrial environments.

FAQ

Is BC807-25WE6327BTSA1 pin-compatible with BC807-25LT1G?

No - BC807-25WE6327BTSA1 uses SOT-323 (SC-70) packaging with 0.65 mm lead pitch, while BC807-25LT1G uses SOT-23 with 0.95 mm pitch. Pin numbering matches (E-B-C), but physical footprint and thermal characteristics differ significantly, requiring PCB redesign.

What is the maximum operating temperature for continuous operation?

The junction temperature must not exceed 150 °C. At ambient temperatures up to 85 °C, continuous operation at full 500 mA I_C requires board-level thermal design supporting ≤ 80 K/W R_thJS, achievable with ≥ 1 cm² copper pour under the SOT-323 pad per Infineon's thermal guidelines.

Does this part support pulsed operation beyond its DC ratings?

Yes - pulse testing (t < 300 µs, duty cycle < 2%) allows I_C up to 1000 mA and P_tot up to 500 mW. Derating curves in the datasheet define permissible P_tot(max)/P_tot(DC) ratios versus pulse width, enabling short-duration surge handling in motor driver pre-drivers.

How does h_FE vary with temperature and collector current?

h_FE decreases by ~0.5%/°C above 25 °C and peaks near I_C = 100 mA. At –40 °C, h_FE drops ~20% from room-temperature value; at 105 °C, it falls ~35%. Group-25 devices maintain ≥160 h_FE down to I_C = 10 mA and up to I_C = 300 mA per published curves.