Infineon Technologies BC80740WE6327BTSA1

Overview

BC80740WE6327BTSA1 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor in SOT-323 (SC-70) package, rated for 45 V V_CEO, 500 mA I_C, and 250 mW P_tot at T_S ≤ 130 °C, with h_FE = 250–400 at I_C = 100 mA and V_CE = 1 V, used in low-voltage switching and linear amplification stages of consumer audio interfaces and power management blocks.

For engineers reviewing the BC80740WE6327BTSA1 datasheet, BC80740WE6327BTSA1 pinout, BC80740WE6327BTSA1 application, or BC80740WE6327BTSA1 equivalent, key selection criteria include verified V_CE(sat) ≤ 0.7 V at I_C = 500 mA/I_B = 50 mA, guaranteed h_FE group "40", RoHS-compliant SOT-323 thermal performance (R_thJS ≤ 80 K/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain specified across three h_FE groups (16/25/40); BC80740WE6327BTSA1 belongs to group "40", delivering minimum h_FE = 250 at I_C = 100 mA and V_CE = 1 V, and sustaining h_FE ≥ 100 up to I_C = 500 mA under same conditions.

Its AC performance includes f_T = 200 MHz at I_C = 50 mA/V_CE = 5 V, C_cb = 8 pF at V_CB = 10 V, and C_eb = 60 pF at V_EB = 0.5 V - enabling stable operation in AF amplifiers and low-speed digital switches up to ~50 MHz.

Key Specifications

Pinout & Package

BC80740WE6327BTSA1 uses the SOT-323 (SC-70) plastic surface-mount package, measuring 2.2 mm × 2.2 mm × 1.1 mm, with gull-wing leads optimized for reflow soldering and high-density PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-40W,115, BC80740WE6327BTSA1 adds AEC-Q101 assurance without sacrificing electrical specs; versus MMBT4403LT1G, it delivers tighter h_FE control, lower saturation voltage, and superior thermal performance in the same footprint class.

Availability

BC80740WE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery subsystems, industrial sensor interfaces, and consumer audio signal chains requiring stable component supply and long-term lifecycle continuity.

Supply support for BC80740WE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BC80740WE6327BTSA1 belongs to Infineon's BC807/BC808 family of AEC-Q101-qualified general-purpose PNP/NPN transistors designed specifically for automotive and industrial switching and amplification where reliability, thermal robustness, and parametric consistency are critical.

FAQ

What is the maximum continuous collector current for BC80740WE6327BTSA1?

The maximum continuous collector current is 500 mA at T_S ≤ 130 °C, as defined in the Absolute Maximum Ratings table. Derating applies above this case temperature, with total power dissipation dropping linearly to zero at 150 °C junction temperature. Pulse operation supports up to 1000 mA with duty cycle and pulse width constraints per the permissible pulse load curves.

Is BC80740WE6327BTSA1 pin-compatible with BC807-40W from other manufacturers?

Yes - BC80740WE6327BTSA1 uses the standard SOT-323 (SC-70) package with E-B-C pinout (pin 1 = E, pin 2 = B, pin 3 = C), matching Nexperia's BC807-40W,115 and ON Semiconductor's MMBT4403LT1G. Mechanical and solder-reflow compatibility is confirmed; however, electrical tolerances and qualification status differ between vendors.

Does BC80740WE6327BTSA1 support operation at −40 °C?

Yes - the device is fully characterized from −65 °C to +150 °C storage and operates reliably down to −40 °C ambient, with h_FE, V_CE(sat), and leakage parameters validated across this range. Its AEC-Q101 qualification includes extended temperature cycling and high-temperature reverse bias testing at −40 °C.

What is the typical transition frequency (f_T) and how is it measured?

The typical transition frequency is 200 MHz, measured at I_C = 50 mA, V_CE = 5 V, and f = 100 MHz using high-frequency S-parameter analysis. This value reflects the frequency at which current gain drops to unity and confirms suitability for audio-frequency amplification and low-speed digital switching up to ~50 MHz with adequate gain margin.