Infineon Technologies BC 807-40W E6433

Overview

BC 807-40W E6433 from Nexperia is a PNP silicon general-purpose audio-frequency bipolar junction transistor in SOT323 package, rated for 500 mA collector current, 45 V V_CEO, and minimum DC current gain (h_FE) of 250 at I_C = 100 mA / V_CE = 1 V, used in low-voltage switching and linear amplification stages of power management and signal conditioning circuits.

For engineers reviewing the BC 807-40W E6433 datasheet, BC 807-40W E6433 pinout, BC 807-40W E6433 application, or BC 807-40W E6433 equivalent, this part supports design validation for discrete biasing networks, level-shifting interfaces, and load-switching functions where low V_CE(sat) (≤0.7 V) and thermal robustness (T_j = 150 °C) are critical.

Technical Context

This PNP BJT operates in active, saturation, and cutoff regions with verified DC current gain linearity across I_C = 10 mA to 500 mA and temperature range −40 °C to 105 °C. Its f_T = 200 MHz enables stable operation in AF and low-speed digital switching up to ~10 MHz.

The device features low thermal resistance R_thJS ≤ 80 K/W (SOT323 package), enabling sustained 250 mW dissipation at T_S ≤ 130 °C, and exhibits V_BE(sat) ≤ 1.2 V at I_C = 500 mA / I_B = 50 mA - critical for efficient base drive in compact logic-level interfaces.

Key Specifications

Pinout & Package

SOT323 (SC-70) 3-pin surface-mount plastic package with standard lead frame geometry and RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-40W E6433, the BC807-40 E6327 trades thermal efficiency for higher absolute power rating in less dense layouts, while MMBT3906LT1G offers lower saturation voltage at reduced gain consistency - making the BC807-40W optimal for space-constrained, medium-current linear and switching roles requiring both gain and thermal headroom.

Availability

BC 807-40W E6433 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, DC-DC converter bias networks, and industrial sensor signal conditioning requiring stable component supply across automotive, industrial, and consumer production programs.

Supply support for BC 807-40W E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.

The BC807 series belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-yield applications demanding consistent gain, low saturation voltage, and AEC-Q101 compliance in compact packages.

FAQ

Is BC 807-40W E6433 pin-compatible with BC807-40 E6327?

Yes - both share identical pinout (B-E-C) and electrical polarity, but differ in package: BC807-40W uses SOT323 (smaller footprint, better thermal resistance), while BC807-40 uses SOT23. PCB layout must be adjusted for pad dimensions and thermal relief, though schematic symbol remains interchangeable.

What is the maximum operating temperature for continuous operation?

The junction temperature limit is 150 °C, and the device sustains 250 mW power dissipation continuously when the soldering point temperature (T_S) is held at or below 130 °C. Derating is required above that point per the P_tot vs. T_S curve in Figure 7 of the datasheet.

Does BC 807-40W E6433 support pulsed operation beyond its DC ratings?

Yes - it supports peak collector current up to 1000 mA and pulse power up to 3× DC rating, provided duty cycle (D) and pulse width (t_p) comply with the permissible pulse load curves in Figures 7–8. At D = 0.02 and t_p = 100 µs, P_tot(max)/P_tot(DC) ≈ 3.5.

How does the hFE group "40" affect circuit design?

The "40" designation guarantees h_FE ≥ 250 at I_C = 100 mA / V_CE = 1 V, with typical values reaching 400–630. This allows conservative base resistor sizing for saturation, improves noise margin in analog amplifiers, and reduces sensitivity to process variation compared to lower-group variants like "16" or "25".