Nexperia USA Inc. BC807W,135

Overview

BC807W,135 from Nexperia is a PNP bipolar junction transistor (BJT) in SOT323 (SC-70) package, rated for −45 V V_CEO, −500 mA continuous collector current, and DC current gain (h_FE) of 100–600 at V_CE = −1 V and I_C = −100 mA. It serves as a general-purpose switching and linear amplification device in low-voltage power management and signal conditioning circuits.

For engineers reviewing the BC807W,135 datasheet, BC807W,135 pinout, BC807W,135 application, or BC807W,135 equivalent, key selection criteria include its PNP polarity, SOT323 footprint compatibility, −700 mV V_CE(sat) at I_C = −500 mA/I_B = −50 mA, thermal resistance of 431 K/W on FR4 with 1 cm² collector pad, and non-automotive qualification status.

Technical Context

This discrete PNP BJT operates in active, saturation, and cutoff regions with defined absolute maximum ratings: −50 V V_CBO, −5 V V_EBO, and 150 °C maximum junction temperature. Its pulsed operation supports I_CM = −1 A (t_p ≤ 1 ms), and thermal derating follows two distinct curves depending on PCB copper area.

The device exhibits typical f_T = 80 MHz at V_CE = −5 V, I_C = −10 mA, and 100 MHz test frequency, with C_c = 5 pF at V_CB = −10 V. Base-emitter voltage is −1.2 V at I_C = −500 mA, decreasing ~2 mV/K with rising temperature.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package with 3 leads; 1.35 mm × 1.15 mm body size, 0.65 mm lead pitch, and 0.25 mm nominal lead thickness. Designed for reflow and wave soldering per IPC-7351B footprint standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC807-16W,135, the BC807W,135 offers broader h_FE flexibility for varying drive conditions; versus MMBT3906LT1G, it delivers 5× higher continuous current and superior thermal performance in a smaller SOT323 footprint-critical for space-constrained, medium-power switching.

Availability

BC807W,135 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, low-voltage power switching, and audio signal amplification requiring stable component supply across industrial, consumer, and embedded development cycles.

Supply support for BC807W,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial-standard components.

The BC807W series belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained applications demanding robust DC switching and analog amplification performance in consumer, computing, and industrial electronics.

FAQ

Is BC807W,135 qualified for automotive applications?

No. Per Nexperia's revision history (Rev. 8, July 2022), BC807W,135 is explicitly designated as non-automotive qualified. It lacks AEC-Q101 stress testing and automotive-specific reliability validation. For automotive use, consult Nexperia's BC807W-Q series or equivalent automotive-qualified PNP transistors.

What is the maximum allowable PCB copper area for thermal performance?

The 431 K/W R_th(j-a) value assumes a 1 cm² copper pad connected to the collector terminal on FR4 PCB with single-sided, tin-plated copper. Using less than 1 cm² increases thermal resistance-e.g., standard footprint yields 625 K/W-reducing safe continuous power dissipation from 290 mW to 200 mW at 25 °C ambient.

Can BC807W,135 replace BC807-40W,135 in a design?

Yes, electrically-both share identical V_CEO, I_C, V_CE(sat), and package-but BC807W,135 has wider h_FE (100–600 vs. 250–600). If the circuit relies on minimum h_FE ≥ 250 for guaranteed saturation, BC807W,135 may require base drive adjustment to ensure I_B ≥ I_C/100 under worst-case gain.

Does BC807W,135 support pulse operation beyond its DC ratings?

Yes. The datasheet specifies I_CM = −1 A for single pulses ≤ 1 ms, and h_FE and V_CE(sat) parameters are pulsed (t_p ≤ 300 μs, duty cycle ≤ 0.02). This enables short-duration surge handling-e.g., inductive load flyback clamping or peak-current sensing-without exceeding junction temperature limits.