onsemi BC80816MTF

Overview

BC80816MTF from ON Semiconductor is a PNP epitaxial silicon transistor in SOT-23 package, rated for V_CEO = −25 V, I_C = −800 mA, and h_FE = 100–250 at I_C = −100 mA. It serves as a general-purpose switching and amplification device in low-power analog and digital interface stages.

For engineers reviewing the BC80816MTF datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE binning (16-class), low V_CE(sat) of −0.7 V at I_C = −500 mA/I_B = −50 mA, thermal resistance of 403 °C/W, and compatibility with AF-driver and low-power output stage designs.

Technical Context

This PNP bipolar junction transistor operates in common-emitter configuration with DC current gain specified across two test conditions: h_FE1 at V_CE = −1 V, I_C = −100 mA (100–250), and h_FE2 at same V_CE but I_C = −300 mA (≥60). Its breakdown ratings-V_CES = −30 V and V_EBO = −5 V-define safe operating limits under open-base and open-collector conditions.

Thermal performance is characterized by P_D = 310 mW at T_A = 25 °C, derating linearly at 2.48 mW/°C above ambient, and R_θJA = 403 °C/W on standard FR-4 PCB. Small-signal behavior includes f_T = 100 MHz at V_CE = −5 V, I_C = −10 mA, and C_ob = 12 pF at V_CB = −10 V.

Key Specifications

Pinout & Package

SOT-23 (JEDEC TO-236AB) 3-lead surface-mount package with 1.30 mm × 2.92 mm footprint, 1.20 mm max height, and gull-wing leads. Standard land pattern per MA03DREV10.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with BC808-16LT1G and MMBT808, BC80816MTF offers traceable Fairchild heritage with documented 16-class h_FE binning and identical thermal metrics, making it preferred for legacy design continuity and qualification-critical programs where original spec compliance is mandated.

Availability

BC80816MTF is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfaces, low-power audio amplifiers, power supply enable switches, and discrete logic level translators requiring stable component supply and guaranteed h_FE binning.

Supply support for BC80816MTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and consumer markets.

The BC80816MTF belongs to the BC807/BC808 family of general-purpose PNP transistors designed for cost-sensitive, space-constrained applications requiring reliable switching and amplification at audio and low-speed digital frequencies.

FAQ

What is the maximum collector-emitter voltage rating for BC80816MTF?

The BC80816MTF has a maximum collector-emitter voltage (V_CEO) rating of −25 V under open-base conditions. This rating defines the upper limit for safe operation in common-emitter configurations. Exceeding this voltage risks avalanche breakdown and permanent device damage. The BC80816MTF also specifies V_CES = −30 V for open-emitter conditions, which applies during switching transients with base held at fixed potential.

Does BC80816MTF have a guaranteed h_FE range, and how is it binned?

Yes, BC80816MTF is binned to the "16" h_FE classification, guaranteeing a DC current gain (h_FE1) of 100–250 when measured at V_CE = −1 V and I_C = −100 mA. This binning ensures predictable biasing in amplifier and switch designs without requiring post-production gain screening. The BC80816MTF datasheet confirms this range is tested and guaranteed per unit, not typical or average.

What is the saturation voltage of BC80816MTF, and under what conditions is it specified?

The BC80816MTF has a maximum collector-emitter saturation voltage (V_CE(sat)) of −0.7 V, specified at I_C = −500 mA and I_B = −50 mA. This value reflects the voltage drop across the transistor when fully turned on, directly impacting conduction losses in switching applications. At lower currents (e.g., I_C = −100 mA), V_CE(sat) typically falls below −0.3 V, improving efficiency in low-power uses.

Can BC80816MTF be used as a direct replacement for BC80716MTF in existing designs?

No, BC80816MTF is not a direct replacement for BC80716MTF due to differing voltage ratings: BC80816MTF has V_CEO = −25 V and V_CES = −30 V, while BC80716MTF is rated for −45 V and −50 V respectively. Substituting BC80816MTF in circuits exposed to >25 V collector swings risks premature breakdown. Both share identical package, pinout, and h_FE binning, but voltage derating must be verified per application.

What is the thermal resistance (R_θJA) of BC80816MTF, and how does it affect PCB layout?

The BC80816MTF has a junction-to-ambient thermal resistance (R_θJA) of 403 °C/W on a standard FR-4 PCB (76 mm × 114 mm, 1.57 mm thick) with minimum land pattern. This high value means even modest power dissipation (e.g., 150 mW) can raise junction temperature by >60 °C above ambient. To maintain reliability, layouts should maximize copper area around the SOT-23 pads and avoid enclosing the device in thermally isolated zones.