Infineon Technologies BC 808-25 E6327

Overview

BC808-25 E6327 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor in SOT23 package, rated for 25 V V_CEO, 500 mA I_C, and 330 mW P_tot at T_S ≤ 79 °C, with h_FE = 160–250 (IC = 100 mA, V_CE = 1 V), used in low-voltage switching and linear amplification stages of consumer power management circuits.

For engineers reviewing the BC808-25 E6327 datasheet, BC808-25 E6327 pinout, BC808-25 E6327 application, or BC808-25 E6327 equivalent, key selection criteria include verified V_CE(sat) ≤ 0.7 V at I_C = 500 mA/I_B = 50 mA, AEC-Q101 qualification, RoHS-compliant SOT23 footprint, and complementary pairing with BC817-25/BC818-25 NPN devices.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain grouped as h_FE = 160–250 at I_C = 100 mA and V_CE = 1 V, and maintains stable gain across –40 °C to 105 °C ambient per h_FE vs. I_C curves. Its low V_CE(sat) (≤0.7 V) and V_BE(sat) (≤1.2 V) support efficient low-side switching in 3.3 V/5 V logic-driven loads.

Thermal performance is defined by R_thJS ≤ 215 K/W (SOT23), enabling reliable operation up to T_j = 150 °C. AC characteristics include f_T = 200 MHz (I_C = 50 mA, V_CE = 5 V) and C_cb = 8 pF (V_CB = 10 V), suitable for AF signal amplification and moderate-speed digital switching.

Key Specifications

Pinout & Package

BC808-25 E6327 uses the standard SOT23 plastic surface-mount package (3-pin, 1.3 mm × 2.9 mm × 1.0 mm), optimized for automated placement and reflow soldering in high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC808-25 E6327, BC808-25LT1G provides identical performance with alternate supply chain traceability, while MMBT808 offers equivalent electrical behavior and mechanical compatibility-both eliminate redesign effort when substituting for second-source procurement or lifecycle risk mitigation.

Availability

BC808-25 E6327 is available at Aetrix Electronics and suitable for LED driver stages, power supply enable switches, audio preamp biasing, and logic-level translation requiring stable component supply and AEC-Q101 compliance.

Supply support for BC808-25 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BC808-25 E6327 belongs to the BC807/BC808 family of general-purpose PNP transistors designed for cost-effective, high-reliability switching and amplification in automotive and industrial signal-path applications.

FAQ

Is BC808-25 E6327 AEC-Q101 qualified?

Yes, BC808-25 E6327 is explicitly qualified to AEC-Q101 standards for automotive-grade reliability, including stress testing for temperature cycling, humidity, and mechanical shock. This qualification is documented in Infineon's official BC807/BC808 product specification dated 2007-06-08 and confirmed on Infineon's product page for this part number.

What is the maximum allowable junction temperature?

The absolute maximum junction temperature (T_j) for BC808-25 E6327 is 150 °C, as specified in the "Maximum Ratings" table. Operation beyond this limit risks permanent degradation of h_FE, increased leakage, or bond-wire failure. Thermal design must ensure T_j remains below 150 °C under worst-case ambient and power dissipation conditions.

Can BC808-25 E6327 replace BC808-40 in a circuit?

No-BC808-25 E6327 has h_FE = 160–250, while BC808-40 specifies h_FE = 250–400. Substituting without recalculating base drive may cause insufficient saturation or excessive base current. Also, V_CEO differs: 25 V vs. 25 V (same), but V_CBO is 30 V vs. 30 V-no change. Gain mismatch is the primary constraint.

Does BC808-25 E6327 have a built-in ESD protection diode?

No, BC808-25 E6327 does not integrate ESD protection diodes. It is a bare-die PNP transistor with standard junction isolation. External TVS or series resistors are recommended if handling or system-level ESD events exceed ±2 kV (HBM), per JEDEC JS-001 test conditions cited in Infineon's reliability report for this family.