Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BC 808-40 E6327

Part No.:
BC 808-40 E6327
Manufacturer:
Infineon Technologies
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC 808-40 E6327.pdf
Description:
TRANS PNP 25V 0.5A PG-SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,853

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC808-40 E6327 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor with VCEO = 25 V, IC = 500 mA, hFE = 250–630 (at IC = 100 mA), VCE(sat) ≤ 0.7 V (IC = 500 mA, IB = 50 mA), and SOT-23 package. It serves as a medium-power switching or linear amplification device in low-voltage DC-DC bias networks, LED drivers, and relay interface circuits.

For engineers reviewing the BC808-40 E6327 datasheet, BC808-40 E6327 pinout, BC808-40 E6327 application, or BC808-40 E6327 equivalent, key selection criteria include guaranteed hFE group 40 performance across temperature, AEC-Q101 qualification for automotive-grade reliability, low VCE(sat) at high current, RoHS-compliant lead-free packaging, and thermal resistance RthJS ≤ 215 K/W in standard SOT-23 mounting.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC gain groups (hFE = 250–630) and stable breakdown ratings: V(BR)CEO = 25 V, V(BR)CBO = 30 V, and V(BR)EBO = 5 V. Its fT = 200 MHz supports moderate-speed switching up to ~10 MHz in practical designs.

Thermal design relies on junction-to-solder-point resistance ≤215 K/W (SOT-23) and derated power dissipation down to 0 mW at TS = 150 °C. Cutoff currents remain below 50 µA at 150 °C, supporting operation in extended-temperature industrial environments.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO25 V - Maximum safe collector-emitter voltage before avalanche in open-base configuration
IC500 mA - Continuous DC collector current rating at TA = 25 °C with proper heatsinking
hFE (group 40)250–630 - Guaranteed DC current gain range at IC = 100 mA, VCE = 1 V, enabling predictable base drive sizing
VCE(sat)≤0.7 V - Low saturation voltage at IC = 500 mA / IB = 50 mA, minimizing conduction loss in switch mode
fT200 MHz - Transition frequency at IC = 50 mA, VCE = 5 V, limiting usable bandwidth in RF-coupled stages
RthJS≤215 K/W - Junction-to-solder-point thermal resistance in SOT-23, defining PCB copper requirement for thermal management
AEC-Q101Qualified - Validated for automotive electronic systems per stress test requirements (HTOL, TC, HTRB, etc.)

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads; standardized 3-pin footprint compatible with automated placement and reflow soldering. Dimensions: 2.9 × 1.3 × 1.0 mm (L × W × H).

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)ECurrent sink terminal; connects to higher potential node in PNP configuration; requires low-impedance return path
2 (Base)BControl input; forward-biased to turn on device; typical drive current 50 mA for full saturation at 500 mA load
3 (Collector)CCurrent source terminal; connects to load and supply rail; handles full switched current with minimal voltage drop

Key Features

FeatureDesign Value
High-current capability500 mA continuous collector current enables direct driving of small relays, LEDs, and logic-level loads without external buffers
Grouped hFE binshFE = 250–630 (group 40) ensures consistent base resistor selection across production lots for predictable switching thresholds
Low VCE(sat)≤0.7 V at rated current reduces power loss to <350 mW in saturated switching, easing thermal design
AEC-Q101 qualificationValidated for automotive under-hood and cabin applications including body control modules and lighting drivers
Pb-free RoHS complianceMeets EU Directive 2011/65/EU; no lead content in termination finish or mold compound

Applications

Automotive Lighting ControlIndustrial Sensor Interface

Use Scenario: Driving 12 V incandescent or high-brightness LED clusters in headlamp or tail lamp modules.

IC Role / Device Role / Timing Role: PNP switch controlling current path from battery rail to load; operated in saturation for minimal heat generation.

Use Value: VCE(sat) ≤ 0.7 V limits power dissipation to <350 mW at 500 mA, eliminating need for heatsinks in compact lamp housings.

Use Scenario: Level-shifting and buffering analog sensor outputs (e.g., thermistor, potentiometer) into microcontroller ADC inputs.

IC Role / Device Role / Timing Role: Emitter-follower configured for unity-gain voltage buffering with high input impedance and low output impedance.

Use Value: hFE ≥ 250 ensures stable bias current delivery over –40 °C to +105 °C, maintaining signal fidelity across operating range.

Power Supply Enable CircuitRelay Driver Stage

Use Scenario: Enabling/disabling secondary 3.3 V or 5 V LDO regulators in multi-rail embedded systems via MCU GPIO.

IC Role / Device Role / Timing Role: High-side switch turning on regulator EN pin; driven by 3.3 V logic with appropriate base resistor.

Use Value: V(BR)CEO = 25 V provides 5× margin over 5 V rail, ensuring robustness against transient overvoltage events.

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and HVAC controllers.

IC Role / Device Role / Timing Role: Saturated PNP switch sinking relay coil current through emitter; collector tied to supply, emitter to coil.

Use Value: IC = 500 mA rating matches typical relay coil currents (100–400 mA), avoiding derating or paralleling devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC808-40T (Nexperia)Identical electrical specs and SOT-23 package; same hFE group 40, VCEO = 25 V, IC = 500 mA; differs only in tape-and-reel packaging codeNo functional difference; fully interchangeable in schematic and layoutSelect when requiring Nexperia's logistics or qualification documentation
MMBT808 (ON Semiconductor)Same pinout and core specs, but hFE min = 200 (vs. 250); VCE(sat) max = 0.8 V (vs. 0.7 V); not AEC-Q101 qualifiedLimited to non-automotive industrial use due to lack of automotive qualification and slightly lower gain guaranteeChoose for cost-sensitive consumer applications where AEC-Q101 is not required

Compared with BC808-40 E6327, BC808-40T offers identical performance with alternate packaging logistics, while MMBT808 trades AEC-Q101 compliance and tighter hFE/VCE(sat) guarantees for broader commercial availability-making the Infineon part optimal for automotive and high-reliability industrial designs.

Availability

BC808-40 E6327 is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor interfaces, power supply enable circuits, and relay driver stages requiring stable component supply and long-term manufacturability.

Supply support for BC808-40 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BC807/BC808 series belongs to Infineon's general-purpose bipolar transistor product line, designed specifically for cost-effective, reliable switching and amplification in automotive and industrial applications demanding AEC-Q101 qualification and tight parametric binning.

FAQ

What is the maximum allowable junction temperature for BC808-40 E6327?

The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of hFE, increased leakage, or bond wire failure. Derating curves in Figure 7 confirm zero power dissipation at case temperature (TS) = 150 °C for the SOT-23 variant.

Is BC808-40 E6327 pin-compatible with BC807-40 variants?

Yes-both share identical SOT-23 pinout (Emitter-Base-Collector on pins 1-2-3) and mechanical footprint. However, BC807-40 is NPN with VCEO = 45 V and complementary characteristics; direct substitution requires circuit topology revision (e.g., swapping high-side/low-side placement and bias polarity).

Does BC808-40 E6327 support pulsed operation above its DC current rating?

Yes-peak collector current (ICM) is rated at 1000 mA for pulse widths <300 µs and duty cycle <2%. The permissible pulse load curve (Figure 7) shows Ptot(max)/Ptot(DC) ratio increases with shorter pulses, enabling brief surge handling in motor startup or inrush-limited circuits.

How does the AEC-Q101 qualification impact BC808-40 E6327's use in non-automotive designs?

AEC-Q101 qualification ensures enhanced robustness against thermal cycling, humidity, and mechanical stress-benefiting any mission-critical application. While not required outside automotive, it provides measurable reliability advantages in industrial controls, medical devices, and outdoor equipment exposed to wide temperature swings or vibration.

BC 808-40 E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100mA, 1V
Power - Max:
330 mW
Frequency - Transition:
200MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BC 808-40 E6327 FAQ

1.How can I place an order for BC 808-40 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC 808-40 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC 808-40 E6327 reliable?

The price and inventory of BC 808-40 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC 808-40 E6327 is usually 5 days.

3.What payment methods are accepted for BC 808-40 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC 808-40 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC 808-40 E6327?

BC 808-40 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC 808-40 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC 808-40 E6327?

For technical support, including BC 808-40 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC 808-40 E6327 requirements.

6.How does Aetrix verify that BC 808-40 E6327 is sourced from the original manufacturer or authorized distributors?

All BC 808-40 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC 808-40 E6327 meets industry standards.

7.What is the process for return or replacement of BC 808-40 E6327?

All BC 808-40 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BC 808-40 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC 808-40 E6327 part is unused and in its original packaging.

Return procedure for BC 808-40 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC 808-40 E6327 Tags

  • BC 808-40 E6327
  • BC 808-40 E6327 PDF
  • BC 808-40 E6327 Datasheet
  • BC 808-40 E6327 Specifications
  • BC 808-40 E6327 Images
  • Infineon Technologies
  • Infineon Technologies BC 808-40 E6327
  • Buy BC 808-40 E6327
  • BC 808-40 E6327 Price
  • BC 808-40 E6327 Distributor
  • BC 808-40 E6327 Supplier
  • BC 808-40 E6327 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER