Infineon Technologies BC 808-40W H6327

Overview

BC808-40W H6327 from Infineon Technologies is a PNP silicon general-purpose audio-frequency transistor in SOT323 package, rated for 25 V V_CEO, 500 mA I_C, and 250 mW P_tot at T_S ≤ 130 °C, with h_FE = 250–400 (I_C = 100 mA, V_CE = 1 V), V_CE(sat) ≤ 0.7 V (I_C = 500 mA, I_B = 50 mA), and f_T = 200 MHz - used in low-voltage switching and linear amplification stages of consumer audio and power management circuits.

For engineers reviewing the BC808-40W H6327 datasheet, BC808-40W H6327 pinout, BC808-40W H6327 application, or BC808-40W H6327 equivalent, key selection criteria include guaranteed h_FE group 40 performance across temperature, low saturation voltage under high-current drive, RoHS-compliant SOT323 thermal resistance (R_thJS ≤ 80 K/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain specified across three h_FE groups (16/25/40); BC808-40W delivers minimum h_FE = 250 at I_C = 100 mA and supports pulsed operation up to 1 A I_CM. Its complementary NPN counterpart is BC818-40W.

Thermal design relies on R_thJS ≤ 80 K/W (SOT323 package, T_S ≤ 130 °C), enabling stable operation in space-constrained PCB layouts where junction-to-solder-point heat transfer is critical. Electrical characteristics are fully characterized from –40 °C to 150 °C.

Key Specifications

Pinout & Package

SOT323 plastic surface-mount package with gull-wing leads, optimized for automated assembly and thermal performance on FR-4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with BC808-40W H6327, BC808-40 E6327 trades thermal performance for cost and availability in legacy SOT23, while MMBT808 offers broader h_FE range but no automotive qualification - making H6327 optimal for thermally demanding, AEC-Q101–required designs.

Availability

BC808-40W H6327 is available at Aetrix Electronics and suitable for automotive body control units, portable audio amplifiers, and industrial sensor interface modules requiring stable component supply and AEC-Q101 compliance.

Supply support for BC808-40W H6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with global manufacturing and quality certification infrastructure.

BC808-40W belongs to the BC807/BC808 family of general-purpose PNP transistors designed for reliable, cost-effective linear amplification and switching in automotive, consumer, and industrial electronics.

FAQ

What is the maximum operating temperature for BC808-40W H6327?

The junction temperature (T_j) is rated up to 150 °C, and the device is specified for operation across –40 °C to 150 °C ambient. The SOT323 package achieves R_thJS ≤ 80 K/W only when soldered to a PCB with adequate copper area and T_S ≤ 130 °C.

Is BC808-40W H6327 pin-compatible with BC808-40 E6327?

No - BC808-40W H6327 uses SOT323 (smaller footprint, gull-wing leads), while BC808-40 E6327 uses SOT23 (larger pad pitch, different thermal profile). Pin numbering (B-E-C) is identical, but mechanical mounting and reflow profiles differ significantly.

Does BC808-40W H6327 support pulsed current operation beyond its DC rating?

Yes - peak collector current (I_CM) is rated at 1000 mA for pulse widths < 300 µs with duty cycle < 2%. Pulse derating curves in the datasheet define permissible P_tot(max)/P_tot(DC) ratios versus pulse duration (t_p).

How does the h_FE group 40 specification affect circuit design?

h_FE group 40 guarantees minimum DC current gain of 250 at I_C = 100 mA and V_CE = 1 V, enabling predictable bias point setting without gain-dependent feedback. This reduces sensitivity to transistor variation in production batches and improves yield in amplifier and switch driver designs.