Infineon Technologies BC817K25E6327HTSA1

Overview

BC817K25E6327HTSA1 from Infineon Technologies is an NPN silicon general-purpose audio-frequency transistor with h_FE group 25 (160–250), 45 V V_CEO, 500 mA I_C, and 0.7 V V_CE(sat) at 500 mA/50 mA, used in low-voltage switching and linear amplification stages of automotive body control modules and industrial sensor interface circuits.

For engineers reviewing the BC817K25E6327HTSA1 datasheet, BC817K25E6327HTSA1 pinout, BC817K25E6327HTSA1 application, or BC817K25E6327HTSA1 equivalent, key selection criteria include guaranteed h_FE range at 100 mA/1 V, thermal resistance ≤70 K/W (SOT23), AEC-Q101 qualification, and RoHS-compliant SMD packaging for high-reliability embedded signal conditioning.

Technical Context

This transistor operates as a medium-current, medium-voltage NPN switch or amplifier with DC current gain specified across three h_FE groups (16/25/40) and validated over −40 °C to 150 °C junction temperature. Its low V_CE(sat) and high f_T (170 MHz typ.) support efficient switching in 5–24 V rail applications and broadband small-signal amplification up to ~100 MHz.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and features Pb-free SOT23 packaging with defined thermal resistance (R_thJS ≤70 K/W) and pulse power derating curves for transient load handling in engine control units and lighting drivers.

Key Specifications

Pinout & Package

BC817K25E6327HTSA1 is housed in a Pb-free, RoHS-compliant SOT23 plastic package (JEDEC TO-236AB), measuring 2.9 mm × 1.3 mm × 1.0 mm, with gull-wing leads optimized for automated reflow assembly and thermal performance in space-constrained PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC817K25E6327HTSA1, BC817-25,115 offers identical electrical specs but lacks automotive qualification, while MMBT3904LT1G trades voltage margin and current rating for broader h_FE tolerance-neither matches its combined AEC-Q101, 45 V, and 500 mA capability.

Availability

BC817K25E6327HTSA1 is available at Aetrix Electronics and suitable for automotive body control units, industrial sensor interfaces, consumer power supply feedback circuits, and medical diagnostic equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for BC817K25E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices, with global manufacturing and quality certification infrastructure.

This part belongs to Infineon's BC817K family of AEC-Q101-qualified general-purpose NPN transistors, designed specifically for high-reliability signal switching and amplification in automotive and industrial embedded systems.

FAQ

Is BC817K25E6327HTSA1 pin-compatible with BC817-25?

Yes, both use identical SOT23 pinout (Emitter-Base-Collector on pins 1-2-3) and share identical mechanical dimensions and solder pad layout. However, BC817K25E6327HTSA1 adds AEC-Q101 qualification and tighter thermal resistance specification (≤70 K/W vs. typical 85 K/W), making it suitable for automotive applications where the standard BC817-25 is not approved.

What is the maximum allowable base current for continuous operation?

The absolute maximum rated base current (I_B) is 100 mA per datasheet Section 2. The recommended design limit is 50 mA for saturation at I_C = 500 mA, ensuring reliable V_CE(sat) ≤0.7 V and preventing thermal runaway. Exceeding 50 mA continuously increases junction temperature beyond safe operating area limits.

Does this transistor support pulsed operation above 500 mA?

Yes, peak collector current (I_CM) is rated at 1000 mA for pulse widths <300 µs with duty cycle <2%. Pulse derating curves in Section 7 confirm 2× current capability for short transients, provided average power remains within 500 mW and junction temperature stays below 150 °C-critical for driving solenoids or flash LEDs.

How does h_FE vary with temperature and collector current?

h_FE decreases by ~0.5%/°C above 25 °C and peaks near I_C = 100 mA. At −40 °C, h_FE drops ~30% from room-temperature value; at 105 °C, it falls ~20%. Graphs in Section 5 show h_FE remains ≥100 across −40 °C to 150 °C for I_C = 10–500 mA, supporting robust bias design in wide-temperature environments.