Infineon Technologies BC817K25WH6433XTMA1

Overview

BC817K25WH6433XTMA1 from Nexperia is an NPN silicon general-purpose audio-frequency transistor in SOT323 package, rated for 45 V V_CEO, 500 mA I_C, and 250 mW P_tot at T_S ≤ 130 °C, with h_FE = 160–250 (Group K25) and V_CE(sat) ≤ 0.7 V at I_C = 500 mA / I_B = 50 mA, used in low-voltage switching and signal amplification stages of automotive body control modules.

For engineers reviewing the BC817K25WH6433XTMA1 datasheet, BC817K25WH6433XTMA1 pinout, BC817K25WH6433XTMA1 application, or BC817K25WH6433XTMA1 equivalent, key selection criteria include verified h_FE group consistency, SOT323 thermal derating behavior, AEC-Q101 qualification status, and V_CE(sat) performance under pulsed 500 mA loads.

Technical Context

This device operates as a medium-current, medium-voltage NPN bipolar junction transistor optimized for linear amplification and saturated switching in automotive and industrial control circuits. Its h_FE grouping (K25) guarantees 160–250 gain at I_C = 100 mA / V_CE = 1 V, and its f_T = 170 MHz supports stable operation up to mid-VHF band.

Thermal design relies on R_thJS ≤ 80 K/W (SOT323 package), with power dissipation derated linearly above T_S = 130 °C. Cutoff characteristics are defined by V_(BR)CEO = 45 V, V_(BR)CBO = 50 V, and V_(BR)EBO = 5 V, ensuring robustness against transient overvoltage in 12 V/24 V systems.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mount package with gull-wing leads, 1.3 mm × 2.1 mm footprint, 0.95 mm height, and lead pitch of 0.65 mm. Designed for reflow soldering and compatible with standard pick-and-place equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC817-25,115, BC817K25WH6433XTMA1 trades 200 mW lower power rating for 0.65 mm smaller footprint and automotive qualification; versus MMBT3904LT1G, it delivers guaranteed h_FE consistency and AEC-Q101 validation at the expense of slightly higher V_CE(sat) at low currents.

Availability

BC817K25WH6433XTMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, and medical infusion pump motor drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant discrete transistors.

Supply support for BC817K25WH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

BC817K series belongs to Nexperia's AEC-Q101-qualified general-purpose transistor product line, engineered specifically for robust switching and amplification in harsh-environment automotive control units and safety-critical industrial interfaces.

FAQ

Is BC817K25WH6433XTMA1 pin-compatible with BC817-25,115?

Yes, both share identical pinout (1=Base, 2=Emitter, 3=Collector) and electrical function, but differ in package: BC817K25WH6433XTMA1 uses SOT323 while BC817-25,115 uses SOT23. Mechanical fit requires footprint verification, and thermal derating curves differ due to R_thJS values (80 vs. 70 K/W).

What is the maximum allowable base current for continuous operation?

The absolute maximum rated base current is 100 mA, but for reliable long-term operation at 500 mA collector current, the recommended continuous I_B is ≤ 50 mA per datasheet test condition for V_CE(sat). Exceeding this risks localized heating and accelerated degradation of the base-emitter junction.

Does BC817K25WH6433XTMA1 support pulsed operation beyond 500 mA?

Yes - peak collector current I_CM is rated at 1000 mA for pulse widths < 300 µs and duty cycle < 2%. This enables short-duration surge handling in motor startup or solenoid pull-in phases, provided average power remains within 250 mW derated limits.

How does the K25 h_FE group affect circuit design?

The K25 group guarantees h_FE between 160 and 250 at I_C = 100 mA / V_CE = 1 V, allowing precise calculation of base resistor values without margining for worst-case gain spread. This reduces design iteration time and improves production yield in high-volume automotive modules.