Infineon Technologies BC817K40E6327HTSA1

Overview

BC817K40E6327HTSA1 from Infineon Technologies is an NPN silicon general-purpose audio-frequency transistor in SOT-23 package, rated for 45 V V_CEO, 500 mA I_C, and minimum h_FE of 250 at 100 mA/1 V; used in low-voltage switching and amplification stages of automotive body control modules, industrial sensor signal conditioning, and power supply feedback circuits.

For engineers reviewing the BC817K40E6327HTSA1 datasheet, BC817K40E6327HTSA1 pinout, BC817K40E6327HTSA1 application, or BC817K40E6327HTSA1 equivalent, key selection criteria include verified h_FE group K40 (250–630), V_CE(sat) ≤ 0.7 V at 500 mA/50 mA drive, AEC-Q101 qualification, and SOT-23 thermal resistance ≤ 70 K/W.

Technical Context

This transistor operates as a medium-current, medium-voltage NPN switch or linear amplifier with DC current gain tightly binned per h_FE group K40 (250–630 min–max at 100 mA/1 V). Its low V_CE(sat) (≤ 0.7 V) and V_BE(sat) (≤ 1.2 V) enable efficient operation in 3.3 V and 5 V logic-driven loads.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and supports continuous operation up to T_j = 150 °C with derated P_tot = 500 mW at T_S ≤ 115 °C. Thermal resistance R_thJS ≤ 70 K/W ensures stable junction temperature under pulsed or DC bias.

Key Specifications

Pinout & Package

BC817K40E6327HTSA1 uses the standard SOT-23 plastic surface-mount package (3-pin, 1.3 mm × 2.9 mm footprint, 1.1 mm height), optimized for automated assembly and thermal dissipation via PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with BC817K40E6327HTSA1, BC817-40,215 offers identical electrical performance but lacks automotive qualification, while MMBT4401LT1G trades gain precision for higher voltage headroom-making the Infineon part optimal for AEC-Q101–mandated, high-gain-stability applications.

Availability

BC817K40E6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, DC-DC feedback circuits, and power supply enable switching requiring stable component supply and long-term lifecycle support.

Supply support for BC817K40E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BC817K series belongs to Infineon's AEC-Q101–qualified general-purpose bipolar transistor product line, designed specifically for robust, high-reliability switching and amplification in automotive and industrial environments.

FAQ

Is BC817K40E6327HTSA1 pin-compatible with standard BC817-40 variants?

Yes, BC817K40E6327HTSA1 uses the standard SOT-23 package with emitter-base-collector pinout (1-E, 2-B, 3-C), matching all BC817-40 family members including Nexperia BC817-40,215 and ON Semiconductor MMBT4401LT1G. Mechanical and electrical pin compatibility is confirmed per JEDEC TO-236AB outline.

What is the maximum allowable base current for continuous operation?

The absolute maximum base current (I_B) is 100 mA per datasheet ratings. For reliable continuous operation at I_C = 500 mA, the recommended base drive is 50 mA to maintain V_CE(sat) ≤ 0.7 V while avoiding excessive base dissipation or thermal runaway.

Does this transistor support pulsed operation beyond its DC ratings?

Yes, BC817K40E6327HTSA1 supports pulsed collector currents up to 1000 mA (I_CM) with duty cycle ≤ 2% and pulse width < 300 µs. Permissible peak power is governed by R_thJS ≤ 70 K/W and pulse derating curves in Application Note AN077.

How does the K40 h_FE group differ from K16 or K25 variants?

The K40 group guarantees h_FE ≥ 250 (min) at 100 mA/1 V, versus ≥ 100 for K16 and ≥ 160 for K25. This higher minimum gain reduces required base drive, improves noise immunity in analog stages, and enhances consistency in production assemblies where base resistor tolerances matter.