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Nexperia USA Inc. BC846BW/DG/B2,115
- Part No.:
- BC846BW/DG/B2,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC846BW/DG/B2,115.pdf
- Description:
- TRANS NPN 65V 0.1A SOT-323
- Quantity:
- Payment:
- Shipping:
Inventory:2,206
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Product details
Overview
BC846BW/DG/B2,115 from Nexperia is an NPN general-purpose transistor in SOT323 (SC-70) package, rated for 65 V VCEO, 100 mA IC, and DC current gain (hFE) of 200–450 at VCE = 5 V and IC = 2 mA. It serves as a compact, surface-mount switching and amplification device in space-constrained consumer and industrial signal-path circuits.
For engineers reviewing the BC846BW/DG/B2,115 datasheet, BC846BW/DG/B2,115 pinout, BC846BW/DG/B2,115 application, or BC846BW/DG/B2,115 equivalent, this part supports low-voltage logic-level switching, small-signal amplification, and biasing functions where thermal resistance (Rth(j-a) = 625 K/W) and tight hFE grouping (B-grade) are design-critical.
Technical Context
This transistor operates as a discrete NPN bipolar junction device with fixed emitter-base and collector-base junction structures optimized for stable DC gain across temperature (−55 °C to +150 °C) and predictable saturation behavior (VCE(sat) ≤ 400 mV at IC = 100 mA, IB = 5 mA). Its SC-70 footprint enables high-density PCB layouts without compromising thermal derating on FR4 substrates.
It exhibits low capacitance (Cc = 2–3 pF, Ce = 11 pF), enabling use in audio-frequency amplification and digital switching up to ~100 MHz (fT ≥ 100 MHz), while maintaining low noise figure (2–10 dB at 1 kHz) suitable for preamplifier stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 65 V - Maximum safe collector-emitter voltage under open-base condition; defines upper rail limit in switching applications. |
| IC | 100 mA continuous - Absolute max DC collector current; usable up to 100 mA with appropriate thermal management. |
| hFE | 200–450 at VCE = 5 V, IC = 2 mA - Tight B-grade gain bin ensures consistent base drive requirements across production lots. |
| VCE(sat) | ≤ 400 mV at IC = 100 mA, IB = 5 mA - Low saturation voltage minimizes power loss and heating in switch-mode operation. |
| Rth(j-a) | 625 K/W - Thermal resistance from junction to ambient on standard FR4 PCB; determines max power dissipation (200 mW) at Tamb ≤ 25 °C. |
| fT | ≥ 100 MHz - Transition frequency confirms suitability for RF front-end buffering and broadband amplification up to VHF. |
| Cc | 2–3 pF - Collector-base capacitance limits Miller effect in high-gain amplifier configurations. |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package: ultra-compact 3-lead outline (2.2 mm × 1.35 mm × 0.95 mm), optimized for reflow soldering on fine-pitch PCBs with standard 0.5 mm pad pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Current-controlled input node; requires precise IB calculation (e.g., IB ≈ IC/hFE(min)) for reliable saturation. |
| 2 | Emitter (E) | Common reference terminal; tied to ground or low-side return path; carries full load current in common-emitter configuration. |
| 3 | Collector (C) | Output current sink node; connected to load and supply rail; voltage swing limited by VCEO rating. |
Key Features
| Feature | Design Value |
|---|---|
| Two gain selections (A/B grades) | B-grade (200–450 hFE) enables tighter base-resistor tolerance and reduced variation in switching thresholds. |
| Low VCE(sat) at high IC | 400 mV max at 100 mA allows efficient low-voltage switching (e.g., 3.3 V logic control of 5 V loads). |
| High fT and low capacitance | 100 MHz fT + 2–3 pF Cc supports stable small-signal amplification up to 30 MHz without peaking. |
| Robust thermal rating | 150 °C max junction temperature and −65 °C to +150 °C storage range support industrial and automotive-adjacent environments. |
Applications
| LED Driver Circuit | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller outputs with current limiting via base resistor. IC Role / Device Role / Timing Role: Discrete NPN switch providing current gain and level translation between MCU I/O and LED anode. Use Value: Enables direct drive without external driver IC; B-grade hFE ensures consistent LED brightness across units. |
Use Scenario: Amplifying weak sensor signals (e.g., thermistor divider output) before ADC sampling on an embedded controller. IC Role / Device Role / Timing Role: Small-signal common-emitter amplifier stage with fixed bias network and emitter degeneration. Use Value: 100 MHz fT and low 2–3 pF Cc preserve signal integrity up to 10 kHz bandwidth without phase shift. |
| Power Supply Enable Switch | Logic-Level Translation |
Use Scenario: Enabling/disabling a 5 V LDO regulator using a 1.8 V FPGA GPIO pin. IC Role / Device Role / Timing Role: Low-side enable switch controlling LDO EN pin with inverted logic polarity. Use Value: VCEO = 65 V safely isolates 5 V rail; VCE(sat) ≤ 400 mV ensures <1 mW dissipation during active state. |
Use Scenario: Converting 1.2 V LVCMOS logic to 3.3 V levels for interfacing with legacy peripherals. IC Role / Device Role / Timing Role: Single-transistor level shifter with pull-up on collector and base driven by low-voltage source. Use Value: Fast turn-on/off (enabled by low Cc/Ce) supports >10 MHz data rates; no external bias components needed beyond pull-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BW,115 | VCEO = 45 V (vs. 65 V); same SOT323 package and B-grade hFE (200–450) | Not suitable for 60 V rail switching; acceptable for ≤36 V logic and signal paths | Select when lower voltage rating suffices and cost optimization is prioritized |
| MMBT3904LT1G | hFE = 100–300 (looser bin); VCEO = 40 V; Rth(j-a) = 500 K/W (better thermal performance) | Higher gain variation increases base resistor tolerance sensitivity; lower VCEO restricts high-side switching | Prefer for thermally constrained designs where 40 V rating is sufficient and wider hFE spread is acceptable |
Compared with BC846BW/DG/B2,115, BC847BW offers lower voltage headroom but identical gain binning, while MMBT3904LT1G trades gain consistency for improved thermal resistance-making the BC846BW optimal for 65 V–capable, gain-stable switching in compact layouts.
Availability
BC846BW/DG/B2,115 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, power supply enable switching, and logic-level translation requiring stable component supply and tight hFE consistency.
Supply support for BC846BW/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BC846xW series targets cost-sensitive, space-constrained applications needing robust general-purpose transistors with guaranteed gain bins and proven SOT323 manufacturability.
FAQ
What is the maximum continuous collector current for BC846BW/DG/B2,115?
The absolute maximum continuous collector current is 100 mA, as specified in the Limiting Values table (IEC 60134 compliant). Derating is required above Tamb = 25 °C per the thermal resistance (Rth(j-a) = 625 K/W); at 70 °C ambient, max IC drops to approximately 65 mA to maintain Tj ≤ 150 °C.
Is BC846BW/DG/B2,115 suitable for linear amplification applications?
Yes-it delivers stable small-signal amplification with fT ≥ 100 MHz, low noise figure (2–10 dB at 1 kHz), and predictable VBE (660 mV typ. at IC = 2 mA). Its hFE consistency and low Cc/Ce support Class-A audio preamp and sensor signal conditioning up to 30 MHz.
How does the B-grade hFE bin differ from A-grade in the BC846xW series?
BC846BW specifies hFE = 200–450 at VCE = 5 V and IC = 2 mA, whereas BC846AW is binned 110–220. The B-grade enables more aggressive base resistor selection, reduces gain-induced output variance, and improves predictability in switching threshold and saturation depth across production lots.
Can BC846BW/DG/B2,115 be used in automotive applications?
No-this part is not automotive-qualified. The datasheet explicitly states "Non-automotive qualified products" and excludes AEC-Q101 stress testing. For automotive use, select Nexperia's automotive-grade equivalents (e.g., BC846BWH,115) with full qualification documentation and extended temperature validation.
BC846BW/DG/B2,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BC846xW
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 65 V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BC846BW/DG/B2,115 FAQ
1.How can I place an order for BC846BW/DG/B2,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC846BW/DG/B2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC846BW/DG/B2,115 reliable?
The price and inventory of BC846BW/DG/B2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC846BW/DG/B2,115 is usually 5 days.
3.What payment methods are accepted for BC846BW/DG/B2,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC846BW/DG/B2,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC846BW/DG/B2,115?
BC846BW/DG/B2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC846BW/DG/B2,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC846BW/DG/B2,115?
For technical support, including BC846BW/DG/B2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC846BW/DG/B2,115 requirements.
6.How does Aetrix verify that BC846BW/DG/B2,115 is sourced from the original manufacturer or authorized distributors?
All BC846BW/DG/B2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC846BW/DG/B2,115 meets industry standards.
7.What is the process for return or replacement of BC846BW/DG/B2,115?
All BC846BW/DG/B2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC846BW/DG/B2,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC846BW/DG/B2,115 part is unused and in its original packaging.
Return procedure for BC846BW/DG/B2,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC846BW/DG/B2,115 Tags
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MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
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MMBT2222ALT1G
onsemi
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