onsemi BC847AMTF

Overview

BC847AMTF from onsemi is an NPN epitaxial silicon transistor in SOT-23 package, rated for V_CEO = 45 V, I_C = 100 mA, and h_FE = 110–220 (Class A), with f_T = 300 MHz and V_CE(sat) ≤ 250 mV at I_C = 10 mA / I_B = 0.5 mA. It serves as a general-purpose switching and amplification device in low-voltage signal paths, power management stages, and interface circuits.

For engineers reviewing the BC847AMTF datasheet, pinout, applications, or equivalent options, key selection criteria include its Class A h_FE range, SOT-23 thermal performance (R_θJA = 403°C/W), low-noise capability (NF = 2.0–10.0 dB), and compatibility with automated assembly in thin-film PCBs.

Technical Context

The BC847AMTF operates as a discrete NPN bipolar junction transistor with epitaxial base construction, optimized for linear amplification and saturated switching. Its DC current gain is binned to 110–220 at V_CE = 5 V and I_C = 2 mA, and it maintains stable f_T = 300 MHz under V_CE = 5 V, I_C = 10 mA conditions.

Thermal design relies on its SOT-23 package's R_θJA = 403°C/W (FR-4, 76 mm × 114 mm board), with absolute maximum ratings including T_J = 150°C and P_D = 310 mW derated at 2.48 mW/°C above 25°C. V_BE(on) is specified at 580–700 mV, supporting predictable biasing in emitter-follower and common-emitter configurations.

Key Specifications

Pinout & Package

SOT-23 3-lead plastic surface-mount package with standard pin assignment: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Compared with BC847BMTF and MMBT3904LT1G, the BC847AMTF offers the narrowest h_FE range (110–220), simplifying bias stability analysis in precision analog stages, while maintaining identical thermal and switching performance in the SOT-23 footprint.

Availability

BC847AMTF is available at Aetrix Electronics and suitable for audio preamplifiers, microcontroller GPIO drivers, power supply enable circuits, and level translation interfaces requiring stable component supply and SMT-compatible packaging.

Supply support for BC847AMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power, analog, sensor, and connectivity solutions.

The BC847AMTF belongs to the BC846–BC850 family of general-purpose NPN transistors designed for cost-effective, high-volume switching and amplification in consumer, industrial, and computing applications.

FAQ

What is the h_FE range for BC847AMTF?

The BC847AMTF is binned to Class A with a guaranteed DC current gain (h_FE) range of 110 to 220 at V_CE = 5 V and I_C = 2 mA. This tight binning reduces variation in base drive requirements across production units, supporting repeatable bias design in both switching and linear applications without post-manufacturing calibration.

Is BC847AMTF suitable for RF amplification?

Yes, the BC847AMTF has a current gain-bandwidth product (f_T) of 300 MHz, making it suitable for small-signal RF amplification up to approximately 100 MHz with usable gain margin. Its low output capacitance (C_ob = 3.5–6.0 pF) and consistent h_FE behavior support stable matching in VHF front-end stages when used within its specified bias conditions.

What is the maximum power dissipation for BC847AMTF?

The BC847AMTF has a maximum power dissipation (P_D) of 310 mW at T_A = 25°C, derated linearly at 2.48 mW/°C above that temperature. On a standard FR-4 PCB (76 mm × 114 mm), this corresponds to a junction-to-ambient thermal resistance (R_θJA) of 403°C/W, meaning junction temperature rises ~125°C above ambient at full rated power.

Does BC847AMTF have a complementary PNP part?

Yes, the BC847AMTF is complemented by the BC857AMTF - a PNP epitaxial silicon transistor in the same SOT-23 package with matched voltage ratings (V_CEO = −45 V), current capability (I_C = −100 mA), and Class A h_FE binning (110–220). This pairing supports balanced push-pull output stages and complementary bias networks.

What does the "-M" and "-TF" suffix mean in BC847AMTF?

In BC847AMTF, "-M" denotes the SOT-23 package, and "-TF" indicates tape-and-reel packaging optimized for automated surface-mount assembly. The "A" suffix specifies Class A h_FE binning (110–220). Together, these suffixes confirm the device is a SOT-23 packaged, tape-and-reel delivered, gain-binned NPN transistor ready for high-volume SMT production.