Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BC847AQB-QZ

Part No.:
BC847AQB-QZ
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixBC847AQB-QZ.pdf
Description:
TRANS NPN 45V 0.1A DFN1110D-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,970

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC847AQB-Q from Nexperia is an AEC-Q101-qualified NPN general-purpose transistor in a DFN1110D-3 (SOT8015) leadless package, rated for 45 V VCEO, 100 mA IC, and DC current gain (hFE) of 110–220 at VCE = 5 V and IC = 2 mA. It delivers low VCE(sat) (≤400 mV at IC = 100 mA, IB = 5 mA), 0.5 mm profile, and side-wettable flanks for AOI-compatible solder joint inspection - deployed in automotive body control modules for LED driver switching and sensor signal conditioning.

For engineers reviewing the BC847AQB-Q datasheet, BC847AQB-Q pinout, BC847AQB-Q application, or BC847AQB-Q equivalent, this page provides verified package mapping (SOT8015), terminal roles (Base/Emitter/Collector), thermal derating curves, AEC-Q101 qualification status, and direct alternatives with documented hFE and saturation voltage differences.

Technical Context

This NPN bipolar junction transistor operates as a linear amplifier or saturated switch in low-power analog and digital circuits. Its hFE range (110–220) supports predictable biasing in fixed-gain configurations, while its 45 V VCEO rating enables use in 24 V automotive supply rails with margin. The device exhibits VBE ≈ 650–770 mV at IC = 10 mA and shows negative temperature coefficient (~−2 mV/K).

Thermal performance is defined by Rth(j-a) = 368 K/W (35 µm FR4) and 298 K/W (70 µm FR4), with power dissipation derated above 25 °C ambient. Transient thermal impedance data confirms suitability for pulsed loads up to 200 mA (tp ≤ 1 ms), and Cc = 1.5 pF ensures minimal capacitive loading in high-frequency switching nodes.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 45 V - Maximum collector-emitter voltage before breakdown; supports 24 V systems with 87.5 % safety margin.
IC 100 mA continuous - Sustains steady-state load current in LED drivers, logic-level translators, and sensor interface stages.
hFE 110–220 at VCE = 5 V, IC = 2 mA - Enables stable DC bias design without iterative gain compensation.
VCE(sat) ≤400 mV at IC = 100 mA, IB = 5 mA - Limits conduction loss to <40 mW in saturated switching applications.
Ptot 340 mW at Tamb ≤ 25 °C (35 µm FR4) - Defines maximum usable power before thermal shutdown in compact PCB layouts.
fT 100 MHz - Supports small-signal amplification up to FM band frequencies and fast digital edge shaping.
Package DFN1110D-3 (SOT8015) - 1.1 × 1.0 × 0.48 mm footprint with side-wettable flanks for automated optical solder inspection.

Pinout & Package

DFN1110D-3 (SOT8015) is a 3-terminal, leadless, ultra-thin plastic package with exposed thermal pad not connected internally; dimensions are 1.1 mm × 1.0 mm × 0.48 mm, height 0.5 mm, pitch 0.65 mm, and side-wettable flanks for AOI compatibility.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Current-controlled input node; requires ≥5 mA drive for full saturation at 100 mA collector load.
2 Emitter (E) Reference terminal for bias network; tied to ground or low-side return path in common-emitter configuration.
3 Collector (C) Output current sink node; connects to load (e.g., LED anode or relay coil) with 45 V standoff capability.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive underhood and cabin applications per stress test requirements for discrete semiconductors.
Side-wettable flanks Enables 100 % automated optical inspection (AOI) of solder joints without X-ray, reducing post-reflow defect escape.
0.5 mm package height Reduces board stack height in space-constrained modules such as door control units and smart sensors.
Low thermal resistance Rth(j-a) = 298 K/W on 70 µm FR4 enables 150 °C junction operation at 125 °C ambient with 340 mW dissipation.
High fT 100 MHz transition frequency allows use in RF preamplifiers, clock buffers, and fast-switching PWM interfaces.

Applications

Automotive LED Tail Light Driver Industrial Sensor Signal Amplifier

Use Scenario: Switching 24 V LED strings in rear lighting clusters with PWM dimming at 1 kHz.

IC Role / Device Role / Timing Role: NPN switch operating in saturation mode, driven by MCU GPIO with 5 mA base current.

Use Value: VCE(sat) ≤ 400 mV limits power loss to <40 mW per channel, enabling thermally robust layout on 2-layer PCBs.

Use Scenario: Amplifying low-level thermistor or potentiometer signals in HVAC control panels.

IC Role / Device Role / Timing Role: Linear amplifier in common-emitter configuration with fixed hFE-based gain setting.

Use Value: hFE tolerance (110–220) allows ±10 % gain calibration via single resistor, eliminating trim pots.

Smart Meter Load Switch USB-C Power Path Controller

Use Scenario: Enabling/disabling auxiliary metering circuits during sleep mode to meet IEC 62053 standby current limits.

IC Role / Device Role / Timing Role: Low-leakage switch controlling 5 V rail to non-critical peripherals.

Use Value: ICBO ≤ 15 nA at 30 V ensures <1 µA total leakage across 10 parallel channels, preserving battery life.

Use Scenario: Controlling VCONN power sequencing and CC line pull-up in USB-C receptacle designs.

IC Role / Device Role / Timing Role: Level-shifting switch interfacing 1.8 V/3.3 V controller outputs to 5 V VCONN domain.

Use Value: 45 V VCEO withstands transient surges on VCONN lines, preventing latch-up during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BW,115 (Nexperia) SOT323 package (2.1 × 1.25 × 0.95 mm); hFE 110–220; VCEO = 45 V; no side-wettable flanks. Larger footprint and taller profile; unsuitable for AOI; higher Rth(j-a) (400+ K/W) limits power density. Select when legacy SOT323 footprint compatibility is required and AOI is not mandated.
MMBT3904LT1G (onsemi) SOT-23 package; hFE 100–300; VCEO = 40 V; VCE(sat) = 300 mV @ IC/IB = 10 mA/1 mA. Lower VCEO reduces margin in 24 V systems; lacks AEC-Q101 qualification and side-wettable flanks. Select for cost-sensitive consumer applications where automotive qualification and AOI are unnecessary.

Compared with BC847AQB-Q, BC847BW offers mechanical compatibility with older designs but sacrifices AOI support and thermal efficiency; MMBT3904LT1G provides broader hFE spread and lower saturation voltage at light loads but lacks automotive qualification and 45 V headroom needed for robust 24 V system design.

Availability

BC847AQB-Q is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor signal conditioning, smart meter load switching, and USB-C power path management requiring stable component supply across extended temperature ranges (−55 °C to 150 °C).

Supply support for BC847AQB-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET devices.

BC847AQB-Q belongs to the BC847xQB-Q series - a family of AEC-Q101-qualified, ultra-small-footprint NPN transistors engineered specifically for space-constrained automotive and industrial control applications demanding AOI-compliant assembly and thermal resilience.

FAQ

Is BC847AQB-Q pin-compatible with standard SOT-23 NPN transistors?

No. BC847AQB-Q uses the DFN1110D-3 (SOT8015) leadless package with terminals arranged as Base–Emitter–Collector in a 1.1 mm × 1.0 mm outline and 0.65 mm pitch. It is not mechanically or electrically pin-compatible with SOT-23 (2.1 mm × 1.3 mm, 1.9 mm pitch) or SC-70 packages. PCB layout must follow the exact footprint in Figure 17 of the datasheet.

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 100 mA (single pulse, tp ≤ 1 ms). For continuous DC operation, IB must be limited to ensure IC ≤ 100 mA and junction temperature remains ≤ 150 °C. At IC = 100 mA and minimum hFE = 110, required IB is ≥ 0.91 mA; practical design uses 5 mA to guarantee saturation, well within safe continuous limits.

Does BC847AQB-Q require special reflow profile considerations?

Yes. Due to its leadless DFN construction and side-wettable flanks, BC847AQB-Q requires precise stencil design (0.1 mm thickness recommended), solder paste volume control, and peak reflow temperature ≤ 260 °C per JEDEC J-STD-020. The footprint in Figure 17 specifies 0.34 mm × 0.65 mm solder lands with 0.22 mm solder mask clearance to ensure reliable fillet formation for AOI.

How does hFE variation affect bias stability in amplifier designs?

With hFE ranging from 110 to 220, collector current can vary by up to 2× for identical base drive. Stable bias requires emitter degeneration (e.g., 10–100 Ω resistor) or feedback networks. In switching applications, design for worst-case hFE = 110 ensures sufficient base drive (≥5 mA) to maintain VCE(sat) ≤ 400 mV at IC = 100 mA.

BC847AQB-QZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
Power - Max:
340 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
DFN1110D-3

BC847AQB-QZ FAQ

1.How can I place an order for BC847AQB-QZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BC847AQB-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC847AQB-QZ reliable?

The price and inventory of BC847AQB-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847AQB-QZ is usually 5 days.

3.What payment methods are accepted for BC847AQB-QZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847AQB-QZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC847AQB-QZ?

BC847AQB-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC847AQB-QZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC847AQB-QZ?

For technical support, including BC847AQB-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847AQB-QZ requirements.

6.How does Aetrix verify that BC847AQB-QZ is sourced from the original manufacturer or authorized distributors?

All BC847AQB-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847AQB-QZ meets industry standards.

7.What is the process for return or replacement of BC847AQB-QZ?

All BC847AQB-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BC847AQB-QZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC847AQB-QZ part is unused and in its original packaging.

Return procedure for BC847AQB-QZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC847AQB-QZ Tags

  • BC847AQB-QZ
  • BC847AQB-QZ PDF
  • BC847AQB-QZ Datasheet
  • BC847AQB-QZ Specifications
  • BC847AQB-QZ Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BC847AQB-QZ
  • Buy BC847AQB-QZ
  • BC847AQB-QZ Price
  • BC847AQB-QZ Distributor
  • BC847AQB-QZ Supplier
  • BC847AQB-QZ Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER