Diodes Incorporated BC847B-13-F

Overview

BC847B-13-F from Diodes Incorporated is an NPN small-signal transistor in SOT23 package, rated for V_CEO = 45 V, I_C = 100 mA, h_FE = 200–450 (at I_C = 2 mA), f_T = 100–300 MHz, and V_CE(sat) ≤ 250 mV (I_C = 10 mA, I_B = 0.5 mA). It serves as a general-purpose switching and audio-frequency amplifier device in compact consumer and industrial PCBs.

For engineers reviewing the BC847B-13-F datasheet, BC847B-13-F pinout, BC847B-13-F application, or BC847B-13-F equivalent, key selection criteria include DC current gain consistency across temperature, low saturation voltage at moderate drive, thermal resistance (R_θJA = 357 °C/W on 15 mm × 15 mm copper), ESD robustness (HBM 4 kV), and RoHS/Green compliance for high-volume automated assembly.

Technical Context

This NPN bipolar junction transistor operates in linear amplification and saturated switching modes. Its h_FE range (200–450) supports stable biasing in emitter-follower and common-emitter configurations, while f_T ≥ 100 MHz enables use up to low-VHF signal conditioning. The device exhibits V_BE(on) = 580–700 mV at I_C = 2 mA, ensuring predictable turn-on with standard logic-level base drive.

Thermal performance is defined for two mounting conditions: R_θJA = 403 °C/W on minimal pad layout and 357 °C/W on 15 mm × 15 mm 1 oz copper - critical for power-limited SOT23 designs. Safe operating area (SOA) is limited by V_CE ≤ 45 V and pulse-current derating above 100 mA, with V_CE(sat) rising to 600 mV only under heavy overdrive (I_C = 100 mA, I_B = 5 mA).

Key Specifications

Pinout & Package

BC847B-13-F is housed in a surface-mount SOT23 package (JEDEC TO-236AB), measuring 2.90 mm × 1.30 mm × 1.03 mm (L × W × H), with matte tin-plated leads compliant with MIL-STD-202 solderability requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Compared with MMBT3904-7-F and PN2222A-AP, BC847B-13-F delivers superior h_FE consistency and lower V_CE(sat) in the same SOT23 footprint, making it optimal for precision biasing and low-power switching where thermal margin and gain stability are prioritized over raw current capacity.

Availability

BC847B-13-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion interfaces, and low-voltage relay control applications requiring stable component supply, automated assembly compatibility, and long-term lifecycle continuity.

Supply support for BC847B-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-compliant components for consumer, industrial, and automotive markets.

BC847B-13-F belongs to the BC846–BC848 family of general-purpose NPN transistors designed for cost-sensitive, high-volume SMT applications demanding consistent gain, low saturation voltage, and full environmental compliance.

FAQ

What is the maximum continuous collector current for BC847B-13-F?

The absolute maximum continuous collector current (I_C) is 100 mA at T_A = +25°C. Derating applies above 25°C ambient: power dissipation drops linearly to zero at +150°C junction temperature, governed by R_θJA = 357 °C/W on 15 mm × 15 mm copper. Peak pulsed current is rated at 200 mA with duty cycle ≤ 2%.

Is BC847B-13-F suitable for automotive applications?

BC847B-13-F itself is not qualified to AEC-Q101. However, Diodes offers the automotive-grade BC847BQ-13-F variant - identical electrical specs but tested per AEC-Q101 stress requirements and shipped with PPAP documentation. For non-safety-critical interior modules with extended temperature validation, the standard part may be used subject to internal qualification.

How does the K1R marking relate to BC847B-13-F?

K1R is the top-side laser marking code for BC847B-13-F in SOT23 packaging. "K1" denotes the device type (BC847B), and "R" identifies the gain bin (h_FE = 200–450). This marking is visible under magnification and matches Diodes' official marking guide in DS11108 Rev. 28-2, page 2.

Can BC847B-13-F replace BC847C-13-F in existing designs?

No - BC847C-13-F has h_FE = 420–800, significantly higher than BC847B-13-F's 200–450 range. Substituting B for C may cause insufficient drive in high-gain amplifier stages or unstable bias in emitter-follower configurations. Only interchange if circuit analysis confirms minimum h_FE of 200 is sufficient and V_CE(sat) margin remains adequate.