Infineon Technologies BC847BWE6327BTSA1
- Part No.:
- BC847BWE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC847BWE6327BTSA1.pdf
- Description:
- TRANS NPN 45V 0.1A PG-SOT323
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BC847BWE6327BTSA1 from Infineon Technologies is an NPN silicon general-purpose bipolar junction transistor (BJT) designed for audio-frequency input stages and driver applications. It features a DC current gain (hFE) of 200–450 at IC = 2 mA, VCE = 5 V; VCEO = 45 V; VCE(sat) ≤ 250 mV at IC = 10 mA, IB = 0.5 mA; and low noise (F = 1.2–4 dB) in the 1 kHz band - used in compact signal amplification and switching circuits.
For engineers reviewing the BC847BWE6327BTSA1 datasheet, BC847BWE6327BTSA1 pinout, BC847BWE6327BTSA1 application, or BC847BWE6327BTSA1 equivalent, key selection criteria include its SOT-323 (SC-70) package, AEC-Q101 qualification for automotive use, RoHS-compliant Pb-free construction, and verified hFE group B performance across temperature.
Technical Context
This transistor operates as a linear amplifier or saturated switch in low-power analog and digital interface circuits. Its hFE grouping (B: 200–450), low VCE(sat), and fT = 250 MHz support stable small-signal gain and fast switching up to ~10 MHz.
Designed for thermal reliability in space-constrained PCBs, it delivers Ptot = 250 mW at TS ≤ 128 °C and RthJS ≤ 90 K/W in its SOT-323 package - enabling use in thermally dense automotive cabin electronics and industrial sensor front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - supports rail-to-rail operation in 3.3 V/5 V/12 V logic-level interfaces without breakdown risk |
| hFE (IC = 2 mA) | 200–450 - ensures predictable biasing and gain stability in emitter-follower and common-emitter amplifier stages |
| VCE(sat) | ≤250 mV @ IC/IB = 10 mA/0.5 mA - minimizes conduction loss in low-side switching and LED driver saturation |
| fT | 250 MHz - enables reliable operation in audio preamps and clock buffer stages up to 10 MHz |
| Noise figure | 1.2–4 dB @ 1 kHz - meets SNR requirements for microphone preamplifiers and sensor signal conditioning |
| Ptot | 250 mW @ TS ≤ 128 °C - allows continuous operation in sealed enclosures with limited airflow |
| RthJS | ≤90 K/W - supports thermal design margin in automotive ambient temperatures up to 105 °C junction |
Pinout & Package
BC847BWE6327BTSA1 is housed in a Pb-free, RoHS-compliant SOT-323 (SC-70) surface-mount plastic package with gull-wing leads and a thermal pad footprint optimized for PCB heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Connected to ground or low-impedance return path; defines reference for VBE bias and sets emitter degeneration resistor placement |
| 2 (Base) | Control input | Receives drive current to modulate collector current; requires series resistor to limit IB and prevent thermal runaway |
| 3 (Collector) | Current source terminal | Delivers amplified output current; routed to load or next stage; layout must minimize parasitic inductance for high-frequency stability |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood and cabin applications per stress test requirements including HTOL, TC, and ESD |
| Low VCE(sat) | Reduces power loss and self-heating in battery-powered drivers and always-on sensor nodes |
| Group B hFE binning | Enables consistent circuit behavior across production lots without post-assembly gain trimming |
| Low-noise operation | Supports high-fidelity audio signal paths and precision instrumentation amplifier front-ends |
| SOT-323 package | Enables <1.6 mm² board area usage while maintaining manufacturability on standard SMT lines |
Applications
| Automotive Cabin Sensors | Industrial Analog Input Modules |
|---|---|
Use Scenario: Signal conditioning for temperature, humidity, and occupancy sensors in HVAC control units. IC Role / Device Role / Timing Role: NPN amplifier in transimpedance configuration converting sensor current to voltage. Use Value: Low noise and stable hFE ensure ±0.5% measurement accuracy over -40°C to +85°C ambient. | Use Scenario: Isolated 4–20 mA loop receiver front-end with galvanic separation. IC Role / Device Role / Timing Role: Linear amplifier stage providing gain and offset adjustment before ADC sampling. Use Value: VCEO = 45 V withstands transient surges on industrial field wiring without clamping diodes. |
| Portable Audio Preamps | Smart Home Motion Detector Interfaces |
Use Scenario: Microphone bias and first-stage amplification in Bluetooth earbuds and voice remotes. IC Role / Device Role / Timing Role: Common-emitter low-noise amplifier with active load. Use Value: 1.2 dB noise figure preserves SNR in battery-limited devices operating at 1.8 V supply. | Use Scenario: PIR sensor signal amplification and threshold detection in battery-operated motion lights. IC Role / Device Role / Timing Role: Switching transistor driving comparator reference or enabling sleep-mode logic. Use Value: VCE(sat) ≤ 250 mV limits quiescent current to <1 µA in standby, extending 2xAA battery life to >2 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BW,115 (Nexperia) | Same SOT-323 package, identical hFE group B (200–450), but not AEC-Q101 qualified | Limited to commercial-grade consumer electronics; unsuitable for automotive OEM designs | Select when cost sensitivity outweighs automotive qualification requirement |
| MMBT3904LT1G (ON Semiconductor) | Higher VCEO = 40 V (vs. 45 V), lower hFE min = 100, same SOT-23 package (not SOT-323) | Requires PCB redesign due to different footprint; less gain consistency at low IC | Choose only if existing SOT-23 layout reuse is mandatory and gain tolerance can be relaxed |
Compared with BC847BW,115 and MMBT3904LT1G, BC847BWE6327BTSA1 uniquely combines AEC-Q101 compliance, SOT-323 miniaturization, and tight hFE binning - making it optimal for space-constrained automotive and industrial signal chains where reliability and repeatability are non-negotiable.
Availability
BC847BWE6327BTSA1 is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial analog input modules, portable audio preamplifiers, and smart home motion detector interfaces requiring stable component supply and long-term lifecycle assurance.
Supply support for BC847BWE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
This part belongs to Infineon's BC846–BC850 family of silicon NPN transistors engineered for high-reliability AF amplification and switching in automotive and industrial environments - emphasizing low noise, gain consistency, and thermal robustness.
FAQ
Is BC847BWE6327BTSA1 pin-compatible with BC847B,115?
Yes - both use the SOT-323 (SC-70) package with identical pin 1 (Emitter), pin 2 (Base), pin 3 (Collector) assignment. Mechanical and electrical pinout matches exactly, enabling direct replacement without layout change.
What is the maximum junction temperature during continuous operation?
The absolute maximum junction temperature is 150 °C. Under typical conditions with TS ≤ 128 °C and Ptot = 250 mW, steady-state Tj remains ≤ 135 °C - verified per Infineon's thermal resistance data (RthJS ≤ 90 K/W).
Does this transistor support pulsed operation beyond its DC ratings?
Yes - pulse operation up to IC = 200 mA is allowed for tp ≤ 10 ms (duty cycle ≤ 2%), as specified in the Absolute Maximum Ratings table. Derating curves confirm safe operation within thermal limits under short-duration loads.
Can BC847BWE6327BTSA1 replace BC847C in a design?
No - BC847C has hFE = 420–800 (group C), while BC847BWE6327BTSA1 is group B (200–450). Gain mismatch may cause bias point shift or instability in feedback-critical circuits like oscillators or precision amplifiers.
BC847BWE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BC847BWE6327BTSA1 FAQ
1.How can I place an order for BC847BWE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847BWE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847BWE6327BTSA1 reliable?
The price and inventory of BC847BWE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847BWE6327BTSA1 is usually 5 days.
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Once your BC847BWE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847BWE6327BTSA1?
For technical support, including BC847BWE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847BWE6327BTSA1 requirements.
6.How does Aetrix verify that BC847BWE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BC847BWE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847BWE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BC847BWE6327BTSA1?
All BC847BWE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC847BWE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847BWE6327BTSA1 part is unused and in its original packaging.
Return procedure for BC847BWE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC847BWE6327BTSA1 Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

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MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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