Diodes Incorporated BC847C-13-F

Overview

BC847C-13-F from Diodes Incorporated is an NPN small-signal transistor in SOT23 package, rated for 45 V V_CEO, 100 mA I_C, and 600 minimum h_FE at 2 mA/5 V, optimized for switching and audio-frequency amplification in space-constrained consumer and industrial PCBs.

For engineers reviewing the BC847C-13-F datasheet, BC847C-13-F pinout, BC847C-13-F application, or BC847C-13-F equivalent, key selection criteria include DC current gain consistency across temperature, low V_CE(sat) at 10 mA/0.5 mA drive, ESD robustness (4 kV HBM), RoHS/Green compliance, and SOT23 thermal performance under 15 mm × 15 mm copper layout.

Technical Context

This transistor operates as a general-purpose NPN bipolar junction device with a typical f_T of 300 MHz at 10 mA/5 V, enabling stable AF amplification up to ~100 kHz and fast switching with <250 mV V_CE(sat) at 10 mA collector current. Its h_FE range (420–800) ensures predictable biasing in emitter-follower and common-emitter configurations.

Thermal design relies on R_θJA = 357 °C/W when mounted on 15 mm × 15 mm 1 oz copper, supporting continuous operation up to +150 °C junction temperature. The 6 V V_EBO rating permits safe base drive in standard logic-level interfaces without clamping.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3-pin configuration, 0.008 g mass, UL 94V-0 flammability rating, and matte tin-plated leads compliant with MIL-STD-202 Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Compared with BC847BW,115 and MMBT3904LT1G, BC847C-13-F provides the highest h_FE consistency and lowest V_CE(sat) in its class, making it optimal for precision biasing and low-loss switching-without automotive qualification overhead or legacy performance compromises.

Availability

BC847C-13-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface logic, and audio pre-amplifier stages requiring stable component supply, consistent h_FE grading, and RoHS-compliant SOT23 packaging.

Supply support for BC847C-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-standard components for power management, signal integrity, and protection.

The BC846A–BC848C series targets cost-sensitive, high-volume applications requiring proven NPN transistor performance in compact SOT23 packages-designed for automatic insertion, AF amplification, and general-purpose switching in consumer, industrial, and computing systems.

FAQ

What is the maximum junction temperature for BC847C-13-F?

The absolute maximum junction temperature is +150 °C, verified per the DS11108 datasheet Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of h_FE and increased leakage. Derating begins at +25 °C ambient using the 357 °C/W R_θJA value on 15 mm × 15 mm copper.

Is BC847C-13-F pin-compatible with BC847B-13-F?

Yes-both share identical SOT23 pinout (Emitter-Base-Collector on pins 1–2–3) and mechanical dimensions. The only difference is h_FE grading: BC847C specifies 420–800, while BC847B is 200–450. No PCB layout change is needed when upgrading for higher gain stability.

Does BC847C-13-F require a base resistor in switching applications?

Yes-a series base resistor is mandatory to limit I_B and prevent damage. For 10 mA I_C and h_FE = 420, ~24 µA base current suffices; a 100 kΩ resistor from a 3.3 V GPIO yields ~33 µA, ensuring reliable saturation while avoiding excessive MCU loading.

Can BC847C-13-F be used in linear amplifier configurations?

Yes-it is characterized for AF amplification with 2 dB typical noise figure at 1 kHz and stable h_FE vs. I_C curves. Use emitter degeneration and proper biasing to maintain linearity; avoid operation near V_CEO or I_C limits to prevent distortion or thermal runaway.