onsemi BC847CMTF

Overview

BC847CMTF from onsemi is an NPN epitaxial silicon transistor in SOT-23 package, rated for 45 V V_CEO, 100 mA I_C, and 310 mW power dissipation, with h_FE range 420–800 at I_C = 2 mA, V_CE = 5 V - used in low-voltage switching and small-signal amplification in consumer and industrial control circuits.

For engineers reviewing the BC847CMTF datasheet, pinout, applications, or equivalent options, key selection criteria include its h_FE classification C, V_CE(sat) ≤ 250 mV at I_C = 10 mA/I_B = 0.5 mA, f_T = 300 MHz, noise figure ≤ 10 dB, and SOT-23 thermal resistance of 403 °C/W.

Technical Context

The BC847CMTF operates as a general-purpose bipolar junction transistor with fixed NPN polarity, optimized for linear amplification and saturated switching. Its DC current gain (h_FE) is binned to 420–800, enabling predictable biasing in emitter-follower and common-emitter configurations.

It features low base-emitter on voltage (V_BE(on) = 580–700 mV), low output capacitance (C_ob = 3.5–6.0 pF), and stable f_T performance up to 300 MHz - supporting audio preamplifier stages, logic-level interface buffering, and PWM-driven LED/motor control where gain consistency and speed matter.

Key Specifications

Pinout & Package

SOT-23 3-lead plastic surface-mount package with standard pin assignment: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. Compact footprint (2.9 mm × 1.3 mm × 1.0 mm) supports high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Compared with BC847BMTF and MMBT3904LT1G, BC847CMTF offers the highest guaranteed h_FE range (420–800), enabling more precise bias design in analog amplifiers and lower base drive requirements in switching applications - especially valuable in space-constrained, low-power embedded systems.

Availability

BC847CMTF is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller GPIO expansion, and audio preamplifier stages requiring stable component supply and consistent h_FE performance.

Supply support for BC847CMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BC847CMTF belongs to the BC846–BC850 family of general-purpose NPN transistors designed for high-volume, cost-sensitive applications requiring reliable switching and amplification in compact SOT-23 packages.

FAQ

What is the h_FE range for BC847CMTF?

The BC847CMTF has a guaranteed DC current gain (h_FE) range of 420 to 800 when measured at V_CE = 5 V and I_C = 2 mA. This tight binning supports repeatable bias design in amplifier and switching circuits without manual gain adjustment. The "C" suffix explicitly denotes this h_FE classification, distinguishing it from BC847AMTF (110–220) and BC847BMTF (200–450).

Is BC847CMTF pin-compatible with BC847BMTF?

Yes, BC847CMTF is fully pin-compatible with BC847BMTF - both use the SOT-23 package with identical pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector) and mechanical dimensions. The only difference is h_FE binning: BC847CMTF guarantees 420–800, while BC847BMTF guarantees 200–450. No PCB layout change is needed for substitution.

What is the maximum power dissipation for BC847CMTF?

The BC847CMTF has a maximum power dissipation (P_D) of 310 mW at T_A = 25 °C, derating linearly by 2.48 mW/°C above that temperature. This rating assumes standard FR-4 PCB conditions (76 mm × 114 mm, 1.57 mm thick). Actual usable power depends on board layout, copper area, and ambient temperature - thermal simulation is recommended for sustained >150 mW operation.

Can BC847CMTF be used in RF applications?

The BC847CMTF has a current gain bandwidth product (f_T) of 300 MHz, making it suitable for low-frequency RF functions such as IF amplification up to ~30 MHz and harmonic suppression in sub-100 MHz oscillator buffers. It is not qualified for high-frequency RF power amplification or front-end receiver stages where specialized RF transistors with higher f_T, lower noise, or better linearity are required.

What is the typical V_BE(on) for BC847CMTF?

The typical base-emitter on voltage (V_BE(on)) for BC847CMTF is 660 mV at V_CE = 5 V and I_C = 2 mA, with a guaranteed range of 580–700 mV. At higher currents (e.g., I_C = 10 mA), V_BE(on) rises to ~720 mV. This low forward voltage enables efficient base drive from 3.3 V or 5 V logic sources with minimal series resistance.