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onsemi BC848AWT1G
- Part No.:
- BC848AWT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC848AWT1G.pdf
- Description:
- TRANS NPN 30V 0.1A SC70
- Quantity:
- Payment:
- Shipping:
Inventory:129,000
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Product details
Overview
BC848AWT1G from onsemi is an NPN general-purpose silicon transistor in SC-70 (SOT-323) package, rated for VCEO = 30 V, IC = 100 mA, and hFE = 110–220 at IC = 10 mA. It delivers low VCE(sat) = 0.25 V (max) at IC/IB = 20 and fT = 100 MHz, enabling use in compact signal amplification and switching circuits in automotive body electronics and industrial sensor interfaces.
For engineers reviewing the BC848AWT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, Pb-free RoHS-compliant SC-70 footprint, guaranteed hFE binning (A-grade), and thermal performance under 150 mW dissipation limits on FR-5 board.
Technical Context
This NPN bipolar junction transistor operates as a linear amplifier or saturated switch with defined DC current gain (hFE) across collector currents from 0.001 mA to 100 mA and VCE up to 5 V. Its base-emitter turn-on voltage is specified at 580–700 mV (IC = 2.0 mA), and saturation behavior is characterized at IC/IB = 20.
The device features low output capacitance (Cobo = 4.5 pF max at VCB = 10 V), noise figure of 10 dB (IC = 0.2 mA), and safe operating area validated up to 30 V and 100 mA with thermal resistance RJA = 833°C/W on FR-5 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum allowable collector-emitter voltage before breakdown; defines safe DC bias headroom in low-voltage switching stages. |
| IC (continuous) | 100 mA - Absolute maximum DC collector current; sets upper limit for load-driving capability in discrete gain stages. |
| hFE (min–max) | 110–220 - Guaranteed DC current gain range at IC = 10 mA, VCE = 5 V; enables predictable biasing without gain compensation. |
| VCE(sat) | 0.25 V (max) at IC = 10 mA, IB = 0.5 mA - Low saturation voltage minimizes power loss and heating in digital switching applications. |
| fT | 100 MHz - Transition frequency confirms usable small-signal amplification up to mid-VHF band in RF front-end or oscillator buffer roles. |
| PD | 150 mW - Total power dissipation limit on FR-5 board at 25°C ambient; constrains continuous operation in thermally constrained layouts. |
| Cobo | 4.5 pF (max) at VCB = 10 V - Low output capacitance supports stable high-frequency gain and reduces Miller effect in amplifier designs. |
Pinout & Package
BC848AWT1G uses the SC-70 (SOT-323) surface-mount package (Case 419, Style 3), measuring 2.1 mm × 1.24 mm × 0.9 mm with 0.65 mm lead pitch. The package is Pb-free, halogen-free, and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased junction; requires current-limited drive (typically 0.1–5 mA) to achieve target IC and saturation. |
| 2 | Emitter | Current return path; connected to ground or low-impedance reference in common-emitter configurations; anchors bias network. |
| 3 | Collector | Output current terminal; connects to load or next stage; must remain ≤30 V below emitter potential to avoid breakdown. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature range (−55°C to +150°C) and reliability stress testing; suitable for non-safety-critical vehicle subsystems. |
| SC-70 package | Small 2.1 × 1.24 mm footprint enables high-density PCB layouts in space-constrained modules like door control units and LED drivers. |
| Guaranteed hFE binning (A grade) | hFE = 110–220 ensures consistent gain across production lots, reducing need for post-manufacture calibration or trim resistors. |
| Pb-free / RoHS compliant | Meets global environmental compliance requirements without sacrificing electrical performance or thermal derating. |
| Low VBE(on) | 580–700 mV at IC = 2.0 mA enables reliable turn-on from 1.8–3.3 V logic-level microcontrollers without level-shifting. |
Applications
| Automotive Body Control Module | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Driving LED indicators and small relays in door latch assemblies and mirror control units. IC Role / Device Role / Timing Role: Discrete NPN switch providing current gain and isolation between MCU GPIO and 12 V loads. Use Value: Low VCE(sat) (0.25 V max) minimizes heat generation in sealed enclosures; AEC-Q101 rating ensures long-term reliability under thermal cycling. |
Use Scenario: Amplifying low-level analog outputs from temperature or pressure sensors before ADC sampling. IC Role / Device Role / Timing Role: Common-emitter DC amplifier stage with stable hFE binning to maintain gain accuracy across temperature. Use Value: 100 MHz fT and 10 dB noise figure support clean amplification of sub-100 kHz sensor signals without added distortion. |
| Consumer Portable Audio Biasing | Power Supply Enable Switching |
Use Scenario: Providing base bias to Class AB audio output transistors in battery-powered headphone amplifiers. IC Role / Device Role / Timing Role: Precision current source for quiescent bias setting in complementary output stages. Use Value: Tight VBE(on) tolerance (580–700 mV) ensures repeatable bias point across units and temperatures, reducing THD variation. |
Use Scenario: Enabling/disabling auxiliary 3.3 V or 5 V rails in multi-rail embedded systems via MCU GPIO. IC Role / Device Role / Timing Role: Low-side enable switch controlling PMOS gate drive or LDO EN pin. Use Value: 100 mA IC rating and 0.25 V VCE(sat) allow direct control of moderate-current enable paths without external driver ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC848BWT1G | Higher hFE range (200–450), same VCEO/IC/package; otherwise identical electrical and thermal specs. | Better suited for low-base-drive applications (e.g., high-gain preamps); may require resistor recalibration in fixed-bias switches. | Select BC848BWT1G when higher current gain is needed without changing layout or thermal design. |
| MMBT3904LT1G | Same SC-70 package, but VCEO = 40 V, hFE = 100–300 (unbinned), and no AEC-Q101 qualification. | Acceptable for commercial-grade consumer or industrial use where automotive qualification is not required. | Choose MMBT3904LT1G for cost-sensitive non-automotive designs where 40 V headroom improves margin over 30 V. |
Compared with BC848AWT1G, BC848BWT1G offers higher guaranteed gain for reduced base drive, while MMBT3904LT1G provides greater voltage margin and broader hFE distribution at the expense of automotive qualification and tighter gain control.
Availability
BC848AWT1G is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable audio biasing requiring stable component supply and AEC-Q101 assurance.
Supply support for BC848AWT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The BC848AWT1G belongs to onsemi's BC846/847/848 series of general-purpose NPN transistors, designed specifically for cost-effective, space-constrained amplification and switching in automotive and industrial applications requiring AEC-Q101 compliance.
FAQ
What is the maximum collector-emitter voltage rating for BC848AWT1G?
The BC848AWT1G has a maximum collector-emitter voltage (VCEO) rating of 30 V. This value is tested and guaranteed per the onsemi datasheet Rev. 8, and represents the absolute maximum DC voltage that can be applied between collector and emitter with the base open before breakdown occurs. Exceeding this rating risks permanent device damage.
Is BC848AWT1G qualified for automotive applications?
Yes, BC848AWT1G is AEC-Q101 qualified and PPAP capable, confirming its suitability for automotive applications outside safety-critical domains. It undergoes stress testing across −55°C to +150°C and meets requirements for humidity, temperature cycling, and mechanical shock per the AEC standard. The "S" prefix variants (e.g., SBC848AWT1G) denote additional site-specific controls.
What is the hFE range for BC848AWT1G and how is it binned?
The BC848AWT1G is binned to the "A" grade, with a guaranteed DC current gain (hFE) range of 110 to 220 when measured at IC = 10 mA and VCE = 5 V. This binning is verified during final test and marked as "1J" on the device top. The specification ensures predictable biasing without lot-to-lot gain variation exceeding this window.
Can BC848AWT1G replace BC847AWT1G in an existing design?
BC848AWT1G is not a direct drop-in replacement for BC847AWT1G due to lower VCEO (30 V vs. 45 V) and VCBO (30 V vs. 50 V). While both share the same SC-70 package and pinout, substituting BC848AWT1G requires verifying that all operating voltages remain within its 30 V ceiling and that gain and saturation characteristics meet circuit requirements under actual load conditions.
What is the thermal resistance of BC848AWT1G on a standard FR-5 board?
The BC848AWT1G has a junction-to-ambient thermal resistance (RJA) of 833°C/W when mounted on an FR-5 board at TA = 25°C, as specified in the onsemi datasheet. This value assumes minimal copper pour and reflects worst-case convection-only cooling; adding thermal relief pads or local copper increases heat dissipation and lowers effective RJA.
BC848AWT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 110 @ 2mA, 5V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70 (SOT323)
BC848AWT1G FAQ
1.How can I place an order for BC848AWT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for BC848AWT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC848AWT1G reliable?
The price and inventory of BC848AWT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC848AWT1G is usually 5 days.
3.What payment methods are accepted for BC848AWT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC848AWT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC848AWT1G?
BC848AWT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC848AWT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC848AWT1G?
For technical support, including BC848AWT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC848AWT1G requirements.
6.How does Aetrix verify that BC848AWT1G is sourced from the original manufacturer or authorized distributors?
All BC848AWT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC848AWT1G meets industry standards.
7.What is the process for return or replacement of BC848AWT1G?
All BC848AWT1G units undergo pre-shipment inspection (PSI). If there is an issue with BC848AWT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC848AWT1G part is unused and in its original packaging.
Return procedure for BC848AWT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC848AWT1G Tags
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MMBT3906LT1G
onsemi
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MMBT3904LT1G
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MMBT3906-7-F
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MMBT2222A-7-F
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BC847B,215
Nexperia USA Inc.
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MMBTA06LT1G
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