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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated BC848B-13-F

Name: BC848B-13-F
Brand: Diodes Incorporated
SKU: BC848B-13-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC848B-13-F

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BC848B-13-F.pdf

Description:: TRANS NPN 30V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC848B-13-F from Diodes Incorporated is an NPN small-signal transistor in SOT23 package, rated for V_CEO = 30 V, I_C = 100 mA, and h_FE = 200–450 at I_C = 2 mA, used in low-power switching and audio-frequency amplification stages of consumer and industrial control circuits.

For engineers reviewing the BC848B-13-F datasheet, BC848B-13-F pinout, BC848B-13-F application, or BC848B-13-F equivalent, key selection criteria include DC current gain tolerance, V_CE(sat) at 10 mA/0.5 mA drive, thermal resistance (R_θJA = 403 °C/W on minimum pad), and RoHS-compliant "Green" molding compound compliance.

Technical Context

This transistor operates as a general-purpose NPN bipolar junction device with complementary PNP types (BC856A–BC858C) and supports both linear amplification (f_T = 100–300 MHz) and saturated switching (V_CE(sat) ≤ 250 mV at I_C = 10 mA, I_B = 0.5 mA). It is characterized under pulsed conditions (≤300 µs, ≤2% duty cycle) for h_FE, V_BE(on), and f_T.

Thermal performance is defined for two mounting conditions: 310 mW power dissipation on minimum FR4 pad layout (R_θJA = 403 °C/W), and 350 mW on 15 mm × 15 mm 1 oz copper (R_θJA = 357 °C/W). ESD robustness includes 4 kV HBM and 400 V MM ratings per JEDEC JESD22-A114/A115.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage headroom in switching applications.
I_C (continuous)	100 mA - Maximum steady-state collector current; sets upper limit for load-driving capability in signal-level stages.
h_FE range	200–450 @ I_C = 2 mA, V_CE = 5 V - Gain spread determines bias stability and amplifier stage gain tolerance across production lots.
V_CE(sat)	90–250 mV @ I_C = 10 mA / I_B = 0.5 mA - Low saturation voltage minimizes conduction loss and self-heating in digital logic interface or relay driver circuits.
f_T	100–300 MHz - Unity-gain bandwidth enables use up to mid-VHF frequencies in RF preamp or oscillator buffer roles.
R_θJA	403 °C/W - Junction-to-ambient thermal resistance on minimal PCB pad; informs derating requirements for ambient temperatures above 25°C.

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3-pin configuration, 0.008 g mass, UL 94V-0 flammability rating, and matte tin-plated leads solderable per MIL-STD-202 Method 208.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Reference node for base-emitter junction; connects to ground or low-impedance return path in common-emitter configurations.
2 (Base)	Control input	Receives forward-bias current to modulate collector current; requires series resistor to limit I_B and ensure saturation or linear operation.
3 (Collector)	Current source terminal	Delivers amplified or switched output current; connects to load and supply rail in active or saturated mode.

Key Features

Feature	Design Value
Lead-free & RoHS 3 compliant	Fully compliant with EU Directive 2015/863/EU; no intentionally added lead, bromine & chlorine <900 ppm each, antimony <1000 ppm.
Automated insertion compatible	SOT23 footprint and marking (K1R) support high-speed pick-and-place assembly without manual handling or orientation errors.
High ESD robustness	4 kV Human Body Model rating enables reliable handling during board assembly and reduces risk of latent damage in unshielded environments.
Wide temperature operation	Specified from –65°C to +150°C junction temperature, supporting deployment in automotive engine bays and industrial motor controls.

Applications

LED Driver Circuit

Microcontroller GPIO Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V or 5 V logic rails in embedded control panels.

IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology, turning LED on/off via microcontroller GPIO.

Use Value: V_CE(sat) ≤ 250 mV ensures >95% of supply voltage reaches LED, minimizing power loss and thermal rise at 100% duty cycle.

Use Scenario: Level-shifting and current boosting between low-drive MCU pins and higher-current peripherals (e.g., optocouplers, small relays).

IC Role / Device Role / Timing Role: Digital interface buffer providing ≥10× current gain to overcome input capacitance and ensure fast edge transitions.

Use Value: h_FE ≥ 200 at 2 mA enables reliable saturation with ≤200 µA base drive, reducing MCU port loading and enabling multi-load fanout.

Audio Pre-amplifier Stage

Power Supply Enable Switch

Use Scenario: Low-noise voltage amplification of microphone or sensor signals in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier biased in Class A, leveraging f_T > 100 MHz for wideband fidelity.

Use Value: NF = 2–10 dB at 1 kHz and 200 µA collector current supports SNR > 60 dB in sub-1 V_PP analog front-ends.

Use Scenario: Enabling/disabling auxiliary 5 V or 3.3 V rails in modular power architectures using MCU-controlled logic.

IC Role / Device Role / Timing Role: High-side or low-side enable switch controlling PMOS/NMOS gate drive or LDO EN pin.

Use Value: I_C = 100 mA rating supports direct control of enable inputs drawing up to 50 mA, eliminating need for additional driver stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847B-13-F	V_CEO = 45 V (vs. 30 V), same h_FE range and SOT23 package	Better voltage margin in 24 V industrial I/O modules; identical pinout and biasing	Select when system V_CC exceeds 30 V or transient overvoltage risk exists.
MMBT3904LT1G	h_FE = 100–300 (narrower range), V_CEO = 40 V, R_θJA = 357 °C/W on 15 mm² copper	Lower gain consistency; slightly better thermal performance on large pads	Choose where tighter h_FE binning is unnecessary and thermal pad area is available.

Compared with BC847B-13-F and MMBT3904LT1G, BC848B-13-F offers the lowest V_CEO but highest h_FE ceiling (450), making it optimal for gain-critical, low-voltage (<30 V) switching and amplification where thermal constraints favor minimal pad layouts.

Availability

BC848B-13-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO interfaces, and audio pre-amplifier stages requiring stable component supply, consistent h_FE binning, and RoHS 3-compliant manufacturing.

Supply support for BC848B-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BC846–BC848 series belongs to Diodes' general-purpose small-signal transistor product line, engineered for cost-sensitive, high-volume applications in consumer electronics, industrial controls, and automotive subsystems requiring proven reliability and automated assembly compatibility.

FAQ

What is the maximum continuous collector current for BC848B-13-F?

The maximum continuous collector current is 100 mA at T_A = +25°C. Derating applies above 25°C ambient: power dissipation drops linearly from 310 mW at 25°C to zero at 150°C junction temperature, based on R_θJA = 403 °C/W for minimum pad layout.

Is BC848B-13-F suitable for automotive applications?

Standard BC848B-13-F is not AEC-Q101 qualified. Diodes offers the automotive-grade BC848BQ-13-F variant with extended temperature testing (–40°C to +150°C), enhanced ESD robustness, and PPAP documentation-required for under-hood or safety-critical vehicle systems.

What does the "K1R" marking on the SOT23 package indicate?

"K1R" is the top-side laser marking code identifying the BC848B variant. "K1" denotes the BC848B gain group (h_FE = 200–450); "R" corresponds to Diodes' internal lot/date coding scheme per their standard marking protocol, not a revision or package variant.

How does BC848B-13-F differ from BC848C-13-F in practical design?

BC848C-13-F has higher h_FE (420–800 vs. 200–450) and lower V_CE(sat) (typ. 90 mV vs. 200 mV at I_C = 10 mA), enabling lower base drive and improved efficiency in saturated switching. Use BC848B where gain consistency matters more than absolute minimum V_CE(sat).

BC848B-13-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 450 @ 2mA, 5V

Power - Max:: 310 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

BC848B-13-F FAQ

1.How can I place an order for BC848B-13-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BC848B-13-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC848B-13-F reliable?

The price and inventory of BC848B-13-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC848B-13-F is usually 5 days.

3.What payment methods are accepted for BC848B-13-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC848B-13-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC848B-13-F?

BC848B-13-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC848B-13-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC848B-13-F?

For technical support, including BC848B-13-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC848B-13-F requirements.

6.How does Aetrix verify that BC848B-13-F is sourced from the original manufacturer or authorized distributors?

All BC848B-13-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC848B-13-F meets industry standards.

7.What is the process for return or replacement of BC848B-13-F?

All BC848B-13-F units undergo pre-shipment inspection (PSI). If there is an issue with BC848B-13-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC848B-13-F part is unused and in its original packaging.

Return procedure for BC848B-13-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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