onsemi BC848BLT1

Overview

BC848BLT1 from onsemi is an NPN silicon general-purpose transistor in SOT-23 package, rated for V_CEO = 30 V, I_C = 100 mA, and h_FE = 200–450 (at I_C = 2 mA, V_CE = 5 V), with V_CE(sat) ≤ 0.6 V at I_C = 100 mA / I_B = 5 mA. It serves as a low-voltage switching or amplification element in consumer power management, LED drivers, and signal conditioning circuits.

For engineers reviewing the BC848BLT1 datasheet, pinout, applications, or equivalent options, key selection considerations include its 30 V V_CEO, 200–450 DC current gain range, SOT-23 thermal performance (P_D = 225 mW on FR-5), ESD robustness (>4000 V HBM), and Pb-free compliance - all critical for space-constrained, cost-sensitive industrial and portable designs.

Technical Context

The BC848BLT1 operates as a discrete bipolar junction transistor optimized for linear amplification and saturated switching in low-power analog and digital interface stages. Its h_FE binning (B-grade) guarantees minimum 200 and typical 290 gain at 2 mA collector current, while f_T = 100 MHz supports audio and low-speed RF signal handling.

Thermal design relies on its SOT-23 footprint: on FR-5 board it delivers 225 mW dissipation at 25°C with 1.8 mW/°C derating, and R_JA = 556°C/W. The device features V_EBO = 5.0 V, limiting base-emitter reverse bias tolerance, and C_obo = 4.5 pF at 10 V, supporting stable high-frequency operation without unintended coupling.

Key Specifications

Pinout & Package

SOT-23 (Case 318, Style 6) surface-mount plastic package with 1.0 mm pitch, 2.0 mm × 1.25 mm footprint, and 0.95 mm height - compatible with standard pick-and-place and reflow processes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC848CLT1 and MMBT3904LT1G, the BC848BLT1 delivers optimal balance of gain predictability (200–450), 30 V operation, and thermal efficiency in SOT-23 - making it ideal for cost-sensitive, volume-manufactured consumer electronics where moderate gain and proven reliability are prioritized over extreme specs.

Availability

BC848BLT1 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, power supply enable switches, and level translation interfaces requiring stable component supply and RoHS-compliant packaging.

Supply support for BC848BLT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power management, analog, sensing, and connectivity solutions.

The BC848BLT1 belongs to onsemi's BC846/BC847/BC848/BC849/BC850 family of preferred general-purpose transistors - engineered for high-volume, cost-sensitive applications in consumer, industrial, and computing markets where reliability, consistency, and manufacturability are essential.

FAQ

What is the maximum collector-emitter voltage rating for BC848BLT1?

The BC848BLT1 has a maximum collector-emitter voltage (V_CEO) rating of 30 V DC. This specification is verified per the official onsemi datasheet Rev. 6 (June 2004), and defines the absolute maximum voltage that can be applied between collector and emitter with the base open before breakdown occurs. Exceeding this value risks permanent device damage. The BC848BLT1 is therefore suited for use in 24 V systems with appropriate safety margin but not for 36 V or higher rails.

What is the DC current gain (h_FE) range of BC848BLT1 and under what test conditions?

The BC848BLT1 exhibits a DC current gain (h_FE) range of 200 to 450 when tested at I_C = 2.0 mA and V_CE = 5.0 V, per the onsemi BC846ALT1 Series datasheet. This B-grade binning ensures consistent performance across production lots. The BC848BLT1 does not guarantee h_FE above 450 - higher gain variants like BC848CLT1 (420–800) are available for applications requiring greater amplification.

Is BC848BLT1 RoHS-compliant and what is its moisture sensitivity level?

Yes, the BC848BLT1 is RoHS-compliant and offered in Pb-free packaging (denoted by "G" suffix in alternate part numbers like BC848BLT1G). Its moisture sensitivity level (MSL) is Level 1 per J-STD-020, meaning it has unlimited floor life when stored at ≤30°C and ≤60% relative humidity - eliminating the need for baking before surface-mount assembly. This simplifies manufacturing logistics and reduces process risk.

What is the saturation voltage V_CE(sat) of BC848BLT1 and how does it impact switching efficiency?

The BC848BLT1 has a maximum V_CE(sat) of 0.6 V when operated at I_C = 100 mA and I_B = 5.0 mA. At lower currents (e.g., I_C = 10 mA, I_B = 0.5 mA), V_CE(sat) drops to ≤0.25 V. This low saturation voltage directly reduces conduction losses - for example, at 100 mA, power dissipation in saturation is ≤60 mW - enhancing thermal performance and efficiency in LED driver and power-switching applications.

Can BC848BLT1 be used in high-frequency signal amplification, and what is its f_T?

Yes, the BC848BLT1 supports high-frequency signal amplification with a current-gain bandwidth product (f_T) of 100 MHz, measured at I_C = 10 mA and V_CE = 5.0 V. This enables stable operation in audio preamplifiers, RF detector stages, and low-speed digital signal conditioning up to ~10–20 MHz. While not intended for GHz-range RF, its f_T exceeds that of many legacy general-purpose transistors, making the BC848BLT1 a capable upgrade in existing SOT-23-based designs.