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Diodes Incorporated BC848BW-7-F
- Part No.:
- BC848BW-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC848BW-7-F.pdf
- Description:
- TRANS NPN 30V 0.1A SOT-323
- Quantity:
- Payment:
- Shipping:
Inventory:2,950
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Product details
Overview
BC848BW-7-F from Diodes Incorporated is an NPN small-signal transistor in SOT323 package, rated for 30 V VCEO, 100 mA IC, and 200 mW power dissipation, with DC current gain (hFE) of 200–450 at 2 mA/5 V, optimized for switching and audio-frequency amplifier applications in space-constrained PCBs.
For engineers reviewing the BC848BW-7-F datasheet, BC848BW-7-F pinout, BC848BW-7-F application, or BC848BW-7-F equivalent, key selection criteria include VCEO/VCBO ratings, hFE band grouping, thermal derating behavior, and SOT323 footprint compatibility with high-density layouts.
Technical Context
This transistor operates as a general-purpose NPN switch or linear amplifier with pulsed-characterized parameters: VCE(sat) ≤ 250 mV at IC = 10 mA/IB = 0.5 mA, fT ≥ 100 MHz at 5 V/10 mA, and Cobo = 3–4.5 pF at 10 V, enabling stable performance up to mid-VHF frequencies.
Its thermal resistance RθJA = 625 °C/W on minimum pad layout supports operation from –65 °C to +150 °C ambient, with ESD robustness per HBM (4 kV), CDM (1 kV), and MM (400 V) standards-critical for automated assembly and industrial signal conditioning stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum collector-emitter voltage before breakdown under normal bias; defines safe operating range in low-voltage switching rails. |
| IC (continuous) | 100 mA - Continuous collector current limit; sets maximum load drive capability without thermal runaway on standard FR4. |
| hFE (Band B) | 200–450 - DC current gain range at VCE = 5 V, IC = 2 mA; ensures predictable base drive sizing for saturation switching. |
| VCE(sat) | 90–250 mV - Collector-emitter saturation voltage at IC = 10 mA/IB = 0.5 mA; determines conduction loss and heat generation in ON-state. |
| fT | 100–300 MHz - Transition frequency at VCE = 5 V, IC = 10 mA; confirms usable bandwidth for AF amplification and fast digital edge control. |
| RθJA | 625 °C/W - Junction-to-ambient thermal resistance on minimal copper pad; dictates required ambient temperature margin for 200 mW power dissipation. |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), lead-free and RoHS-compliant, with matte tin-plated leads solderable per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current sink terminal; connects to ground or low-side return path in common-emitter configurations. |
| 2 (Base) | B | Control input; requires ~0.66 V forward bias and precise current limiting to achieve target hFE-dependent collector drive. |
| 3 (Collector) | C | Current source terminal; interfaces with load (e.g., relay coil, LED string, logic gate input) in switching topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Automated insertion compatibility | SOT323 footprint and marking (K1R) support high-speed pick-and-place and reflow profiling without tombstoning. |
| Thermal stability across temperature | hFE retains >70% of room-temp value at –50 °C and 150 °C, enabling reliable gain in automotive cabin or industrial enclosure environments. |
| Low-noise amplification | Noise figure NF ≤ 10 dB at 200 µA/5 V/2 kHz bandwidth, suitable for preamplifier stages in sensor signal chains. |
| ESD-hardened construction | HBM rating of 4 kV allows direct handling in non-ESD-controlled assembly lines without additional protection circuitry. |
Applications
| LED Driver Circuit | Microcontroller GPIO Expander |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU outputs with current-limiting resistor. IC Role / Device Role / Timing Role: NPN switch providing low-VCE(sat) current sinking path to ground. Use Value: 90 mV VCE(sat) minimizes power loss and self-heating, preserving LED brightness and MCU output integrity. |
Use Scenario: Level-shifting and current boosting for legacy 5 V peripherals connected to 3.3 V microcontrollers. IC Role / Device Role / Timing Role: Active-low buffer stage translating logic states while sourcing/sinking >10 mA. Use Value: Band B hFE ≥ 200 ensures full saturation with <50 µA base drive, reducing GPIO loading and timing skew. |
| Audio Preamp Stage | Power Supply Enable Control |
Use Scenario: Low-gain, low-noise amplification of electret microphone output prior to ADC sampling. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at 2 mA for optimal NF and linearity. Use Value: NF ≤ 10 dB and fT ≥ 100 MHz maintain SNR and bandwidth up to 20 kHz without distortion. |
Use Scenario: Enabling/disabling 12 V auxiliary rail via MCU-controlled pull-down on PMOS gate driver input. IC Role / Device Role / Timing Role: Inverting level translator and current amplifier for high-impedance gate drive. Use Value: 30 V VCEO safely isolates 12 V rail from 3.3 V logic; 200 mW PD accommodates brief inrush during turn-on. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC848BMTF | SOT-23 package (larger footprint), same hFE band and VCEO/IC ratings. | Requires PCB redesign for pad layout; higher RθJA (500 °C/W) reduces thermal headroom at 100 mA. | Select when SOT-23 is already standardized in design and thermal margin exceeds 15 °C. |
| MMBT3904LT1G | hFE = 100–300 (lower max gain), VCEO = 40 V, RθJA = 405 °C/W. | Better voltage headroom but reduced current gain consistency; preferred where VCEO > 30 V is mandatory. | Choose for 3.3 V–5 V systems needing higher VCEO margin and tighter thermal management. |
Compared with BC848BW-7-F, BC848BMTF trades miniaturization for easier hand-soldering and slightly better thermal performance, while MMBT3904LT1G offers higher voltage tolerance at the cost of lower hFE uniformity-making BC848BW-7-F optimal for compact, gain-critical 30 V switching.
Availability
BC848BW-7-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface expansion, audio preamplifiers, and power supply enable control requiring stable component supply and consistent Band B hFE performance.
Supply support for BC848BW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with ISO 9001 and IATF 16949 certified manufacturing facilities.
This part belongs to the BC846AW–BC848CW family of general-purpose NPN transistors designed for high-volume, cost-sensitive switching and amplification in consumer, industrial, and automotive electronics.
FAQ
What is the maximum continuous collector current for BC848BW-7-F?
The maximum continuous collector current is 100 mA at TA = +25 °C. Derating applies above 25 °C per the thermal curve in DS30250 Rev. 16–2 Figure 1: power dissipation drops linearly to zero at 150 °C ambient, requiring design margin below 100 mA in enclosed or high-temperature environments.
Is BC848BW-7-F qualified for automotive applications?
BC848BW-7-F is not AEC-Q101 qualified by default. Diodes Incorporated offers automotive-grade variants (e.g., BC848BWQ-7-F) with PPAP documentation, AEC-Q101 stress testing, and IATF 16949 manufacturing-contact Diodes or Aetrix for qualified alternatives if used in vehicle subsystems.
How does the K1R marking correlate to the BC848BW-7-F device?
K1R is the top-side laser marking code identifying the BC848BW variant in SOT323 packaging. It distinguishes Band B hFE (200–450) from Band A (110–220) and Band C (420–800) versions, ensuring correct gain binning during automated optical inspection and placement.
Can BC848BW-7-F replace BC847BW-7-F in existing designs?
Yes, with verification of VCEO and VCBO margins: BC848BW has lower ratings (30 V vs. 45 V) than BC847BW. If the application operates below 30 V collector-emitter voltage and does not exceed 30 V base-collector stress, the substitution is electrically valid and maintains identical hFE, package, and pinout.
BC848BW-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BC848BW-7-F FAQ
1.How can I place an order for BC848BW-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BC848BW-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC848BW-7-F reliable?
The price and inventory of BC848BW-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC848BW-7-F is usually 5 days.
3.What payment methods are accepted for BC848BW-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC848BW-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC848BW-7-F?
BC848BW-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC848BW-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC848BW-7-F?
For technical support, including BC848BW-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC848BW-7-F requirements.
6.How does Aetrix verify that BC848BW-7-F is sourced from the original manufacturer or authorized distributors?
All BC848BW-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC848BW-7-F meets industry standards.
7.What is the process for return or replacement of BC848BW-7-F?
All BC848BW-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BC848BW-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC848BW-7-F part is unused and in its original packaging.
Return procedure for BC848BW-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC848BW-7-F Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
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