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onsemi BC848CLT3G

Part No.:
BC848CLT3G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC848CLT3G.pdf
Description:
TRANS NPN 30V 0.1A SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:19,825

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Product details

Overview

BC848CLT3G from onsemi is an NPN general-purpose silicon transistor in SOT-23 package, rated for 30 VCEO, 100 mA continuous collector current, and DC current gain (hFE) of 420–800 at IC = 2.0 mA, VCE = 5.0 V - used in low-voltage switching and amplification circuits such as LED drivers and signal conditioning stages in industrial sensor interfaces.

For engineers reviewing the BC848CLT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its VCEO = 30 V rating, hFE binning (C-grade), SOT-23 footprint compatibility, and AEC-Q101 qualification for automotive-grade reliability assurance.

Technical Context

The BC848CLT3G operates as a discrete NPN bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear amplification and saturated switching. Its hFE range (420–800) enables stable biasing across temperature (−55°C to +150°C) without external feedback networks in low-power analog stages.

Designed for surface-mount assembly on FR-5 or alumina substrates, it delivers 225 mW total dissipation at TA = 25°C with thermal resistance RJA = 556°C/W (FR-5) or 417°C/W (alumina), supporting operation in compact, thermally constrained PCB layouts typical in portable instrumentation and automotive body control modules.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 30 V - maximum allowable collector-emitter voltage before breakdown; defines safe operating voltage headroom in 24 V rail switching applications.
IC (continuous) 100 mA - maximum DC collector current; supports driving small relays, LEDs, or logic-level interface loads without heatsinking.
hFE (min–max) 420–800 at IC = 2.0 mA, VCE = 5.0 V - high and tightly binned DC gain enables predictable base drive sizing and stable amplifier bias points.
VCE(sat) 0.25 V max at IC = 10 mA, IB = 0.5 mA - low saturation voltage minimizes power loss and self-heating during switching duty cycles.
fT 100 MHz - unity-gain bandwidth supports small-signal amplification up to RF front-end stages in sub-100 MHz sensor transceivers.
RJA (FR-5) 556°C/W - thermal resistance determines junction temperature rise under ambient conditions; critical for lifetime estimation in sealed enclosures.

Pinout & Package

SOT-23 (TO-236) package: 2.90 mm × 1.30 mm × 1.00 mm body, 1.90 mm lead pitch, JEDEC-compliant footprint for automated placement and reflow.

Pin/Terminal Circuit Role Design Meaning
1 Base Current-controlled input node; requires series resistor to limit IB and ensure saturation or linear operation per hFE and load.
2 Emitter Common reference terminal; connected to ground or low-side return path; carries full IC + IB current in standard configuration.
3 Collector Output node sourcing current to load; placed on high-side of load in common-emitter switch topology; voltage swing limited by VCEO.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive electronics use with PPAP capability; supports deployment in body control units and lighting modules without additional qualification.
Pb-free, RoHS compliant Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free requirements; enables compliance in consumer, industrial, and medical end equipment.
ESD robustness HBM > 4000 V, MM > 400 V - reduces risk of field failure during handling and board assembly in unshielded environments.
Moisture sensitivity level 1 No floor life limitation; can be stored indefinitely at ≤30°C/85% RH and assembled without baking prior to reflow.

Applications

LED Driver Circuit Industrial Sensor Interface

Use Scenario: Driving 20 mA indicator LEDs from microcontroller GPIO pins in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side NPN switch controlling LED current path to ground; operated in saturation mode with IB/IC = 1/20.

Use Value: VCE(sat) ≤ 0.25 V ensures <1 mW conduction loss per LED, preserving battery life in remote monitoring nodes.

Use Scenario: Amplifying millivolt-level output from RTD or thermistor bridges in HVAC temperature sensing modules.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network; configured for 10× voltage gain at DC–10 kHz.

Use Value: fT = 100 MHz and NF = 4.0 dB enable clean amplification without introducing measurable noise or phase shift in sensor signal chain.

Automotive Door Lock Actuator USB Port Power Switch

Use Scenario: Controlling 80 mA solenoid coil in vehicle door latch mechanism via CAN-linked body controller.

IC Role / Device Role / Timing Role: Saturated switch interfacing MCU PWM output to inductive load; includes flyback diode protection externally.

Use Value: IC = 100 mA rating and TJ(max) = +150°C support intermittent 500 ms actuation pulses in under-hood ambient up to +85°C.

Use Scenario: Enabling/disabling 5 V USB downstream power in embedded host devices using 3.3 V logic control.

IC Role / Device Role / Timing Role: High-side switch (with PNP driver stage) or low-side enable switch for USB VBUS path; operated in linear or saturated region.

Use Value: VCEO = 30 V provides 6× margin over 5 V rail, ensuring immunity to transient overshoots during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC848BLT3G Lower hFE range (200–450); same VCEO, IC, package, and thermal specs. Suitable where gain tolerance is relaxed (e.g., digital switching only), but not for precision analog amplification requiring ≥420 hFE. Select BC848BLT3G when cost optimization is prioritized and circuit gain stability is less critical.
MMBT3904LT3G Same SOT-23 package; VCEO = 40 V, hFE = 100–300 (standard grade), fT = 300 MHz. Better high-frequency response but lower gain consistency; not AEC-Q101 qualified. Choose MMBT3904LT3G for non-automotive RF-coupled preamps where higher fT outweighs gain and qualification needs.

Compared with BC848BLT3G and MMBT3904LT3G, the BC848CLT3G uniquely combines automotive qualification, highest hFE binning, and 30 V rating - making it optimal for space-constrained, gain-sensitive, and reliability-critical switching or amplification tasks in harsh environments.

Availability

BC848CLT3G is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body electronics, LED driver circuits, and USB power management requiring stable component supply across production lifecycles.

Supply support for BC848CLT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The BC848CLT3G belongs to the BC846ALT1G Series of general-purpose NPN transistors designed for reliable, low-cost switching and amplification in high-volume, space-constrained applications across automotive and industrial sectors.

FAQ

What is the maximum collector-emitter voltage rating for BC848CLT3G?

The BC848CLT3G has a maximum collector-emitter voltage (VCEO) rating of 30 V DC. This value is specified under test condition IC = 10 mA and defines the absolute upper limit before avalanche breakdown occurs. Exceeding this voltage risks irreversible device failure, especially under transient conditions - design margins should maintain VCE ≤ 24 V in 24 V system applications. The BC848CLT3G datasheet confirms this rating on page 1 of the June 2024 Rev. 20 document.

Is BC848CLT3G suitable for automotive applications?

Yes, BC848CLT3G is AEC-Q101 qualified and PPAP capable, meeting stress-test requirements for temperature cycling, humidity, mechanical shock, and ESD in automotive environments. It is explicitly listed in onsemi's ordering table with no "DISCONTINUED" flag and supports operation from −55°C to +150°C junction temperature. Its qualification makes BC848CLT3G appropriate for body control modules, lighting systems, and sensor interfaces in passenger vehicles - confirmed in the Features section of the BC846ALT1G Series datasheet.

What is the DC current gain (hFE) range for BC848CLT3G?

The BC848CLT3G exhibits a DC current gain (hFE) range of 420 to 800 when tested at IC = 2.0 mA and VCE = 5.0 V, per the Electrical Characteristics table on page 2 of the datasheet. This C-grade binning provides tighter gain distribution than A- or B-grade variants, enabling more predictable base resistor selection in amplifier and switch designs. The BC848CLT3G's hFE remains stable across −55°C to +125°C ambient, as shown in Figures 28–29.

Does BC848CLT3G have Pb-free and RoHS compliance?

Yes, BC848CLT3G is Pb-free, halogen-free/BFR-free, and fully RoHS compliant per EU Directive 2011/65/EU. The "G" suffix in the part number denotes Pb-free packaging, and the datasheet states compliance explicitly in the Features section on page 1. This ensures BC848CLT3G meets environmental regulations for sale and use in the EU, China, and other regulated markets - verified in the June 2024 Rev. 20 revision of the BC846ALT1G Series datasheet.

What is the thermal resistance (RJA) of BC848CLT3G on FR-5 board?

The BC848CLT3G has a junction-to-ambient thermal resistance (RJA) of 556°C/W when mounted on a standard FR-5 PCB (1.0″ × 0.75″ × 0.062″) at TA = 25°C, as specified in the Thermal Characteristics table on page 1. This value assumes no copper pour or thermal vias; adding 1 in² of 2-oz copper on the collector pad reduces RJA significantly. The BC848CLT3G's 225 mW power dissipation limit at 25°C derives directly from this RJA, and derating is required above ambient - confirmed in Note 1 of the datasheet.

BC848CLT3G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Power - Max:
225 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)

BC848CLT3G FAQ

1.How can I place an order for BC848CLT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for BC848CLT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC848CLT3G reliable?

The price and inventory of BC848CLT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC848CLT3G is usually 5 days.

3.What payment methods are accepted for BC848CLT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC848CLT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC848CLT3G?

BC848CLT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC848CLT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC848CLT3G?

For technical support, including BC848CLT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC848CLT3G requirements.

6.How does Aetrix verify that BC848CLT3G is sourced from the original manufacturer or authorized distributors?

All BC848CLT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC848CLT3G meets industry standards.

7.What is the process for return or replacement of BC848CLT3G?

All BC848CLT3G units undergo pre-shipment inspection (PSI). If there is an issue with BC848CLT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC848CLT3G part is unused and in its original packaging.

Return procedure for BC848CLT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC848CLT3G Tags

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