Infineon Technologies BC848CWE6327BTSA1
- Part No.:
- BC848CWE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC848CWE6327BTSA1.pdf
- Description:
- TRANS NPN 30V 0.1A PG-SOT323
- Quantity:
- Payment:

- Shipping:

Inventory:4,350
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Product details
Overview
BC848CWE6327BTSA1 from Infineon Technologies is an NPN silicon general-purpose bipolar junction transistor (BJT) designed for audio-frequency input stages and driver applications. It features a minimum DC current gain (hFE) of 420 at IC = 10 µA, VCE = 5 V; VCEO = 30 V; VCE(sat) ≤ 250 mV at IC = 10 mA, IB = 0.5 mA; and low noise (F = 1.2 dB typ.) in the 1 kHz band - used in low-noise preamplifier front-ends and signal buffering circuits.
For engineers reviewing the BC848CWE6327BTSA1 datasheet, BC848CWE6327BTSA1 pinout, BC848CWE6327BTSA1 application, or BC848CWE6327BTSA1 equivalent, key selection criteria include its SOT-323 (SC-70) package footprint, AEC-Q101 qualification for automotive use, guaranteed hFE group C performance, and RoHS-compliant Pb-free construction.
Technical Context
This transistor operates as a linear amplifying device with fixed-emitter biasing capability, optimized for low-noise AF signal conditioning where stable hFE and minimal VCE(sat) are critical. Its fT = 250 MHz (typ.) supports wideband small-signal amplification up to mid-VHF range, while Ccb = 0.95 pF and Ceb = 9 pF enable predictable high-frequency impedance matching.
The device is thermally rated for Tj = 150 °C and exhibits RthJS ≤ 105 K/W in its SOT-323 package, supporting continuous operation at Ptot = 250 mW when TS ≤ 124 °C. Its complementary PNP counterpart is BC858C, enabling push-pull stage implementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating voltage headroom in low-voltage amplifier rails. |
| hFE (min) | 420 at IC = 10 µA, VCE = 5 V - Ensures consistent small-signal gain stability in high-impedance bias networks without gain compression. |
| VCE(sat) | ≤250 mV at IC = 10 mA, IB = 0.5 mA - Enables efficient switching and low-loss active loads in discrete driver stages. |
| fT | 250 MHz (typ.) - Supports stable small-signal amplification up to ~100 MHz with predictable phase margin in feedback designs. |
| Noise figure | 1.2 dB (typ.) at IC = 200 µA, f = 1 kHz - Meets low-noise requirements for microphone preamps and sensor interface front-ends. |
| RthJS | ≤105 K/W - Limits junction temperature rise under 250 mW dissipation, enabling reliable operation on compact PCBs without heatsinking. |
Pinout & Package
BC848CWE6327BTSA1 is housed in a RoHS-compliant SOT-323 (SC-70) plastic surface-mount package with gull-wing leads, optimized for automated placement and reflow soldering in space-constrained layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Reference node for base bias network; connects to ground or low-impedance return path in common-emitter configurations. |
| 2 (Base) | Control input | Receives current-limited drive signal; requires series resistor to limit IB and ensure hFE-based IC scaling. |
| 3 (Collector) | Current source output | Delivers amplified output current; connects to load resistor or next-stage input with defined VCC headroom. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics use including engine control modules and body electronics requiring extended temperature reliability. |
| Low VCE(sat) | 250 mV max at IC/IB = 20 ensures minimal power loss and thermal stress in linear driver applications. |
| Group C hFE | Guaranteed hFE ≥ 420 enables predictable gain setting without binning or trimming in production assemblies. |
| Low-noise design | F = 1.2 dB typ. at 1 kHz allows direct coupling to electret microphones and piezoelectric sensors without added filtering. |
Applications
| Audio Preamp Stage | Automotive Door Module Driver |
|---|---|
Use Scenario: Amplifying weak signals from condenser microphones in voice-controlled infotainment systems. IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology for voltage gain and impedance transformation. Use Value: Low 1.2 dB noise figure and stable hFE ≥ 420 ensure high SNR and repeatable gain across temperature without calibration. |
Use Scenario: Driving LED indicators and small relays in vehicle door control units exposed to -40 °C to +125 °C ambient. IC Role / Device Role / Timing Role: Discrete switch in saturated mode controlling 20 mA indicator loads. Use Value: VCE(sat) ≤ 250 mV minimizes self-heating during continuous duty, supporting AEC-Q101 lifetime requirements. |
| Industrial Sensor Interface | Consumer Power Management Switch |
Use Scenario: Buffering analog outputs from pressure and temperature transducers in factory automation nodes. IC Role / Device Role / Timing Role: Emitter-follower buffer isolating sensitive sensor output from varying load impedances. Use Value: High hFE and low Ceb = 9 pF preserve signal integrity and bandwidth up to 100 kHz. |
Use Scenario: Enabling/disabling auxiliary power rails in smart home hubs using discrete logic-level control. IC Role / Device Role / Timing Role: Low-side switch controlled by MCU GPIO with base resistor limiting. Use Value: SOT-323 footprint saves board area versus SO-8 alternatives while maintaining 250 mW thermal rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC848CW,115 (Nexperia) | Same SOT-323 package, identical hFE group C (420–800), but VCEO = 30 V and fT = 100 MHz (vs. 250 MHz). | Limited to lower-frequency amplification; unsuitable for >50 MHz signal paths requiring full fT margin. | Select when cost sensitivity outweighs high-frequency performance needs and AEC-Q101 is not required. |
| MMBT3904LT1G (ON Semiconductor) | VCEO = 40 V, hFE = 100–300 (lower gain spread), fT = 300 MHz, but not AEC-Q101 qualified. | Better voltage headroom and higher fT, but lacks automotive qualification and guaranteed high-hFE bin. | Prefer for industrial/commercial designs needing wider VCEO margin and higher speed, without automotive compliance. |
Compared with BC848CWE6327BTSA1, BC848CW,115 trades bandwidth for cost and broad availability, while MMBT3904LT1G offers higher voltage and speed at the expense of guaranteed gain consistency and automotive qualification - making the Infineon part optimal for noise-sensitive, AEC-Q101–mandated AF stages.
Availability
BC848CWE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and consumer audio preamplifiers requiring stable component supply and long-term lifecycle support.
Supply support for BC848CWE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This transistor belongs to Infineon's BC846–BC850 family of AEC-Q101–qualified general-purpose BJTs, engineered for reliability-critical analog signal conditioning and driver functions in harsh-environment applications.
FAQ
Is BC848CWE6327BTSA1 pin-compatible with BC847C or BC850C?
No - BC848CWE6327BTSA1 uses the SOT-323 (SC-70) package, whereas BC847C and BC850C are offered in SOT-23 and TSFP-3 packages respectively. Pin numbering differs across these packages despite identical pin functions (E-B-C). Physical layout and thermal performance are not interchangeable without PCB redesign.
What is the maximum continuous collector current at 125 °C ambient?
At TA = 125 °C, derating applies: Ptot drops to ~125 mW (per thermal curve Fig. 8), limiting IC to approximately 50 mA assuming VCE ≈ 2.5 V. For sustained 100 mA operation, board-level thermal management or forced convection is required.
Does this transistor support DC-coupled amplifier designs?
Yes - its VBE(ON) = 580–770 mV (at IC = 2–10 mA) and low VCE(sat) allow stable DC biasing in common-emitter and emitter-follower topologies. Base resistors must be selected to maintain hFE-dependent IC accuracy across temperature.
Can BC848CWE6327BTSA1 replace BC848B in existing designs?
Yes, with gain improvement: BC848B has hFE = 200–450, while BC848C guarantees ≥420. No layout change is needed (same SOT-323 package), but verify that higher gain does not cause unintended oscillation or reduced phase margin in feedback loops.
BC848CWE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 420 @ 2mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BC848CWE6327BTSA1 FAQ
1.How can I place an order for BC848CWE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC848CWE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC848CWE6327BTSA1 reliable?
The price and inventory of BC848CWE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC848CWE6327BTSA1 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC848CWE6327BTSA1?
For technical support, including BC848CWE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC848CWE6327BTSA1 requirements.
6.How does Aetrix verify that BC848CWE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BC848CWE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC848CWE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BC848CWE6327BTSA1?
All BC848CWE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC848CWE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC848CWE6327BTSA1 part is unused and in its original packaging.
Return procedure for BC848CWE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC848CWE6327BTSA1 Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

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MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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