Infineon Technologies BC849CE6327HTSA1

Overview

BC849CE6327HTSA1 from Infineon Technologies is an NPN silicon general-purpose bipolar junction transistor (BJT) designed for audio-frequency input stages and driver circuits. It features a minimum DC current gain (h_FE) of 420 at I_C = 2 mA, V_CE = 5 V; V_CEO = 30 V; V_CE(sat) ≤ 250 mV at I_C = 10 mA, I_B = 0.5 mA; and low noise (F = 1.2 dB typ.) in the 1 kHz band - enabling high-fidelity signal amplification in compact analog front-ends.

For engineers reviewing the BC849CE6327HTSA1 datasheet, BC849CE6327HTSA1 pinout, BC849CE6327HTSA1 application, or BC849CE6327HTSA1 equivalent, key selection criteria include its SOT23 package compatibility, AEC-Q101 qualification for automotive-grade reliability, h_FE group C performance consistency, and low V_CE(sat) for efficient switching in bias networks and pre-driver stages.

Technical Context

This transistor operates as a linear amplifier or saturated switch in low-voltage analog signal paths. Its h_FE group C classification ensures tightly binned current gain (420–520 at I_C = 2 mA), while the 30 V V_CEO rating supports operation in 24 V industrial control and 12 V automotive subsystems.

The device delivers low-noise performance (1.2 dB typ. noise figure at I_C = 200 µA, f = 1 kHz) and high transition frequency (f_T = 250 MHz typ.), making it suitable for wideband AF amplification and fast-switching applications up to ~100 MHz small-signal gain bandwidth.

Key Specifications

Pinout & Package

BC849CE6327HTSA1 is housed in a standard SOT23 plastic surface-mount package with gull-wing leads, optimized for automated assembly and thermal dissipation on FR-4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC849CE6327HTSA1, BC849CT-7-F offers full drop-in equivalence including AEC-Q101 compliance and noise performance, whereas MMBT3904LT1G trades gain and noise for broader availability and lower cost - requiring circuit revalidation for analog functions.

Availability

BC849CE6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and audio front-end designs requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for BC849CE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification infrastructure.

The BC846–BC850 family was developed specifically for high-reliability analog signal conditioning and driver functions in automotive and industrial environments, emphasizing low noise, tight h_FE binning, and AEC-Q101 compliance.

FAQ

What is the maximum operating junction temperature for BC849CE6327HTSA1?

The absolute maximum junction temperature (T_j) is 150 °C, validated under steady-state thermal conditions per Infineon's datasheet. Derating begins at T_S > 71 °C, where total power dissipation drops linearly from 330 mW to zero at 150 °C case temperature.

Is BC849CE6327HTSA1 suitable for switching applications above 10 MHz?

Yes - with f_T = 250 MHz typical, it supports clean switching up to ~10–20 MHz in low-load configurations. For reliable operation above 10 MHz, keep collector load impedance low (<1 kΩ) and minimize parasitic capacitance via short PCB traces and proper grounding.

Does this part have a complementary PNP counterpart?

Yes - the BC857C (SOT23, h_FE group C) is the direct complementary PNP type, sharing identical V_CEO = 30 V, noise performance, and AEC-Q101 qualification. Pinout is reversed (Emitter/Collector swapped), enabling matched-pair differential pair or push-pull stage design.

How does the h_FE group C specification affect circuit design?

Group C guarantees h_FE ≥ 420 at I_C = 2 mA, enabling bias networks with minimal tolerance stack-up. Designers can eliminate emitter degeneration resistors in gain-critical stages or reduce base resistor values by ~3× compared to group A/B variants, improving input impedance matching.