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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BC849CWE6327HTSA1

Name: BC849CWE6327HTSA1
Brand: Infineon Technologies
SKU: BC849CWE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC849CWE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC849CWE6327HTSA1.pdf

Description:: TRANS NPN 30V 0.1A PG-SOT323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC849CWE6327HTSA1 from Infineon Technologies is an NPN silicon general-purpose bipolar junction transistor (BJT) designed for audio-frequency input stages and driver applications. It features a minimum DC current gain (h_FE) of 420 at I_C = 10 µA, V_CE = 5 V; V_CEO = 30 V; V_CE(sat) ≤ 250 mV at I_C = 10 mA, I_B = 0.5 mA; and low noise (F = 1.2 dB typ.) in the 1 kHz band - used in low-noise preamplifier front-ends and signal buffering.

For engineers reviewing the BC849CWE6327HTSA1 datasheet, BC849CWE6327HTSA1 pinout, BC849CWE6327HTSA1 application, or BC849CWE6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, SOT-323 (SC-70) package footprint, h_FE group C gain binning, low V_CE(sat), and noise performance below 4 dB across AF bandwidths.

Technical Context

This transistor operates as a linear amplifying device in Class-A or Class-AB small-signal stages, with verified h_FE stability over I_C = 10 µA to 100 mA and V_CE = 5 V. Its f_T = 250 MHz (typ.) supports stable gain up to mid-VHF, while C_cb = 0.95 pF and C_eb = 9 pF enable predictable high-frequency roll-off in emitter-follower or common-emitter configurations.

Thermal design relies on R_thJS ≤ 105 K/W (SOT-323 variant), with P_tot = 250 mW at T_S ≤ 124 °C. The device meets AEC-Q101 stress testing for automotive ambient reliability, including temperature cycling and HTRB, without requiring derating for standard industrial PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum collector-emitter voltage before breakdown; sets safe operating range for 24 V rail interfaces and low-voltage audio coupling.
h_FE (min)	420 at I_C = 10 µA, V_CE = 5 V - Ensures consistent bias point stability in high-gain preamp stages with minimal base drive current.
V_CE(sat)	≤250 mV at I_C = 10 mA, I_B = 0.5 mA - Enables efficient switching or saturated operation in logic-level driver circuits with <250 mV voltage drop.
f_T	250 MHz (typ.) - Supports stable small-signal amplification up to ~100 MHz; sufficient for RF front-end buffering in ISM-band receivers.
Noise figure	1.2 dB (typ.) at I_C = 200 µA, f = 1 kHz - Meets low-noise requirements for microphone preamps and sensor signal conditioning where SNR > 60 dB is critical.
P_tot	250 mW at T_S ≤ 124 °C - Defines maximum continuous power dissipation in SOT-323 package; requires thermal pad or copper pour for >150 mW operation.
C_cb	0.95 pF - Limits Miller effect in common-emitter gain stages; enables stable 10–20 MHz bandwidth without neutralization.

Pinout & Package

BC849CWE6327HTSA1 is housed in a RoHS-compliant SOT-323 (SC-70) plastic surface-mount package with gull-wing leads, optimized for automated placement and reflow soldering on dense PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Reference node for bias network; connects to ground or emitter degeneration resistor in common-emitter configuration.
2 (Base)	Control input	Receives current-limited drive; requires series resistor ≥1 kΩ to limit I_B and prevent thermal runaway under V_BE(ON) = 660 mV (typ.) conditions.
3 (Collector)	Current source output	Drives load or next stage; must be decoupled from supply rail via RC filter when used in sensitive analog paths due to f_T-limited impedance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements - enables use in infotainment front-ends and body control modules without additional qualification.
Low V_CE(sat)	≤250 mV at I_C/I_B = 20 - Reduces conduction loss in active loads and improves efficiency in discrete amplifier output stages.
Group C h_FE binning	h_FE = 420–800 at I_C = 10 µA - Enables tighter gain matching in matched-pair differential amplifiers and reduces calibration overhead in production test.
Low-noise AF performance	F = 1.2 dB (typ.) at 1 kHz - Allows direct coupling into electret microphone bias networks without added op-amp stages.

Applications

Audio Preamp Stage

Automotive Sensor Interface

Use Scenario: Low-noise amplification of electret microphone output in hands-free calling systems.

IC Role / Device Role / Timing Role: NPN BJT configured as common-emitter preamplifier with emitter degeneration.

Use Value: Achieves >65 dB SNR at 1 kHz with 200 µA bias current, eliminating need for higher-cost JFET or op-amp solutions.

Use Scenario: Signal conditioning for resistive temperature sensors (RTDs) in engine coolant monitoring.

IC Role / Device Role / Timing Role: Discrete current source for constant-current excitation of 100 Ω Pt100 RTD elements.

Use Value: Stable 1 mA excitation current maintained across −40 °C to +125 °C ambient, leveraging AEC-Q101 thermal robustness.

Industrial Logic-Level Driver

Consumer Power Management

Use Scenario: Driving optocoupler LEDs in isolated feedback loops of AC/DC SMPS controllers.

IC Role / Device Role / Timing Role: Saturated switch controlling 10 mA LED current from 3.3 V microcontroller GPIO.

Use Value: V_CE(sat) ≤ 250 mV ensures >95% LED forward voltage utilization, improving isolation margin and reducing heat in compact enclosures.

Use Scenario: Enabling/disabling 5 V USB peripheral rails in portable media players.

IC Role / Device Role / Timing Role: Low-side load switch controlled by PMIC enable signal.

Use Value: h_FE ≥ 420 allows full turn-on with <5 µA base current, minimizing standby power draw in battery-powered devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC849CTA	Same h_FE group C, but in SOT-23 package; R_thJS = 240 K/W vs. 105 K/W	Lower power handling (330 mW at T_S ≤ 71 °C); unsuitable for sustained >150 mW dissipation	Select when board space permits larger SOT-23 and thermal budget exceeds 71 °C case temperature.
MMBT3904LT1G	h_FE = 100–300 (lower gain bin); V_CEO = 40 V; f_T = 300 MHz	Higher voltage rating but lower noise (F = 5 dB) and no AEC-Q101 qualification	Prefer for non-automotive 40 V rail applications where gain consistency is less critical than bandwidth.

Compared with BC849CWE6327HTSA1, BC849CTA offers identical electrical gain but inferior thermal performance in compact layouts, while MMBT3904LT1G trades AEC-Q101 compliance and low-noise AF capability for higher f_T and wider voltage margin - making it suitable only in cost-sensitive, non-automotive designs.

Availability

BC849CWE6327HTSA1 is available at Aetrix Electronics and suitable for audio preamplifiers, automotive sensor interfaces, and industrial logic-level drivers requiring stable component supply with AEC-Q101 assurance and SOT-323 footprint compatibility.

Supply support for BC849CWE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to Infineon's BC846–BC850 family of silicon NPN transistors, engineered for high-reliability audio-frequency amplification and driver functions in automotive and industrial environments where low noise, gain consistency, and thermal resilience are essential.

FAQ

Is BC849CWE6327HTSA1 pin-compatible with BC847C or BC848C?

No - BC849CWE6327HTSA1 uses SOT-323 (SC-70) packaging with pin 1 = Emitter, pin 2 = Base, pin 3 = Collector. BC847C and BC848C are offered in both SOT-23 and SOT-323 variants; only the SOT-323 versions share identical pinout and mechanical footprint. Always verify package code suffix (e.g., "W" = SOT-323) before substitution.

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is 5 mA (per datasheet Section 3), but for continuous DC operation, I_B should be limited to ≤1 mA to maintain junction temperature below 150 °C under worst-case P_tot = 250 mW. At I_C = 100 mA and h_FE = 420, I_B ≈ 240 µA - well within safe limits with appropriate series resistance.

Does this transistor support operation at −55 °C?

Yes - the specified storage temperature range is −65 °C to +150 °C, and AEC-Q101 qualification includes operation down to −40 °C. While not explicitly rated for −55 °C continuous operation, Infineon's characterization data (Figure 6) shows ICBO remains <10 nA at −50 °C, confirming functional usability at −55 °C in non-safety-critical applications with margin verification.

Can BC849CWE6327HTSA1 replace BC849CW in new designs?

Yes - BC849CWE6327HTSA1 is the tape-and-reel packaged version of BC849CW (same SOT-323 package, same h_FE group C, same electrical specs). The "E6327" suffix denotes Infineon's standard reel packaging (3,000 pcs/reel), and "HTSA1" indicates halogen-free, RoHS-compliant construction - fully interchangeable in layout and circuit function.

BC849CWE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 420 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BC849CWE6327HTSA1 FAQ

1.How can I place an order for BC849CWE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC849CWE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC849CWE6327HTSA1 reliable?

The price and inventory of BC849CWE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC849CWE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BC849CWE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC849CWE6327HTSA1 transactions.

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4.How is shipping managed for BC849CWE6327HTSA1?

BC849CWE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC849CWE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC849CWE6327HTSA1?

For technical support, including BC849CWE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC849CWE6327HTSA1 requirements.

6.How does Aetrix verify that BC849CWE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BC849CWE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC849CWE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BC849CWE6327HTSA1?

All BC849CWE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC849CWE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC849CWE6327HTSA1 part is unused and in its original packaging.

Return procedure for BC849CWE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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