Infineon Technologies BC850BE6327HTSA1

Overview

BC850BE6327HTSA1 from Infineon Technologies is an NPN silicon general-purpose bipolar junction transistor (BJT) designed for audio-frequency input stages and driver circuits. It delivers high DC current gain (h_FE = 420–520 at I_C = 2 mA), low collector-emitter saturation voltage (V_CE(sat) ≤ 250 mV at I_C = 10 mA / I_B = 0.5 mA), and low noise performance (F = 1.2–4 dB, V_n ≤ 0.135 µV in 10–50 Hz band), making it suitable for low-noise preamplifier and line-driver applications in automotive and industrial electronics.

For engineers reviewing the BC850BE6327HTSA1 datasheet, BC850BE6327HTSA1 pinout, BC850BE6327HTSA1 application, or BC850BE6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, SOT23 package compatibility, h_FE group B specification, V_CEO = 45 V rating, and verified low-noise behavior below 15 kHz - critical for signal integrity in analog front-ends and sensor interface stages.

Technical Context

This transistor operates as a linear amplifying device in Class-A or Class-AB configurations, with h_FE specified across two test conditions (I_C = 10 µA and 2 mA) to support both biasing stability and small-signal gain predictability. Its f_T = 250 MHz ensures adequate bandwidth for AF and low-speed switching up to ~10 MHz.

Thermal design is enabled by R_thJS ≤ 240 K/W (SOT23), and its V_CE(sat) and V_BE(sat) values are characterized at two current levels to support accurate power loss estimation in driver-stage thermal modeling.

Key Specifications

Pinout & Package

BC850BE6327HTSA1 is housed in a plastic SOT23 (TO-236) package with gull-wing leads. The package dimensions comply with JEDEC MO-203AA and support reflow soldering per IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with BC850BE6327HTSA1, BC847B offers broader commercial availability but no automotive qualification, while MMBT3904LT1G provides AEC-Q101 compliance at the expense of reduced V_CEO and h_FE, requiring circuit-level recalibration for gain and saturation margin.

Availability

BC850BE6327HTSA1 is available at Aetrix Electronics and suitable for automotive cabin audio preamplifiers, industrial sensor signal conditioners, and consumer audio line drivers requiring stable component supply, AEC-Q101 assurance, and low-noise transistor performance.

Supply support for BC850BE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BC850 series belongs to Infineon's AEC-Q101-qualified general-purpose transistor product line, engineered for reliability-critical analog signal paths in automotive and industrial environments where low noise, consistent h_FE, and thermal robustness are essential.

FAQ

Is BC850BE6327HTSA1 pin-compatible with BC847B?

Yes - both use identical SOT23 pinout (Emitter-Base-Collector on pins 1-2-3) and share identical mechanical footprint and solder pad layout. No PCB redesign is needed when substituting within same h_FE group and voltage class, though V_CEO remains unchanged at 45 V for both.

What is the maximum continuous collector current at 100 °C ambient?

At T_A = 100 °C, derated P_tot = 330 mW × (1 − (100 − 25)/125) ≈ 200 mW; with V_CE(sat) ≤ 250 mV, maximum continuous I_C ≈ 200 mW / 0.25 V = 800 mA - but absolute max rating limits I_C to 100 mA regardless of thermal headroom.

Does BC850BE6327HTSA1 support pulsed operation beyond 100 mA?

Yes - peak collector current I_CM = 200 mA is rated for pulse widths ≤ 10 ms with duty cycle ≤ 2%, validated per datasheet Figure EHP00362. Pulse operation must respect thermal time constants and avoid junction temperature exceeding 150 °C.

How does the BC850B's noise performance compare to BC849B?

BC850B specifies V_n ≤ 0.135 µV (10–50 Hz) and F = 1.2–4 dB, while BC849B only guarantees F ≤ 4 dB with no V_n value published. BC850B is explicitly characterized for ultra-low-noise applications, making it preferred for sub-100 µV input-referred noise designs.