onsemi BC850BMTF
- Part No.:
- BC850BMTF
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BC850BMTF.pdf
- Description:
- TRANS NPN 45V 0.1A SOT-23-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,741
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Product details
Overview
BC850BMTF from Fairchild Semiconductor is an NPN epitaxial silicon transistor in SOT-23 package, rated for 30 V VCEO, 100 mA IC, and 310 mW PC, with hFE = 200–450 (Class B), 1.2 dB noise figure at 1 kHz, and 300 MHz fT. It serves as a low-noise amplifier or general-purpose switch in signal conditioning stages of portable audio and sensor interface circuits.
For engineers reviewing the BC850BMTF datasheet, pinout, applications, or equivalent options, key selection criteria include its Class B hFE range, low VCE(sat) (250 mV @ 100 mA/5 mA), SOT-23 footprint compatibility, and verified noise performance in sub-1 mA bias conditions.
Technical Context
The BC850BMTF operates as a discrete NPN bipolar junction transistor optimized for linear amplification and switching in low-power analog and digital signal paths. Its design emphasizes low noise (1.2 dB NF @ 1 kHz, 200 µA IC) and stable DC current gain across its specified hFE bin (200–450), with guaranteed VBE(on) ≤ 720 mV at IC = 10 mA.
It shares the BC846–BC850 family's absolute maximum ratings-including 30 V VCEO, 30 V VCBO, and 150 °C TJ-and uses the same SOT-23 package with standardized 1-Base / 2-Emitter / 3-Collector pinout. Its Cob = 3.5–6 pF and fT = 300 MHz support RF-coupled preamplifier use up to ~100 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in common-emitter amplifier or switch configurations. |
| IC (DC) | 100 mA - Continuous collector current limit; supports medium-gain switching loads like LED drivers or logic-level translators. |
| hFE (Class B) | 200–450 - Verified DC current gain bin; enables predictable biasing in emitter-follower or small-signal amplifier designs without gain trimming. |
| NF | 1.2 dB @ 1 kHz - Low-noise figure at low current; critical for microphone preamps and sensor front-ends where SNR dominates performance. |
| fT | 300 MHz - Current gain-bandwidth product; confirms usable gain up to VHF frequencies in tuned amplifier stages. |
| VCE(sat) | 250 mV @ IC=100 mA, IB=5 mA - Low saturation voltage reduces conduction loss in high-efficiency switching applications. |
| PC | 310 mW - Power dissipation rating at TA=25°C; sets thermal derating boundary for PCB layout in compact SOT-23 footprints. |
Pinout & Package
SOT-23 plastic surface-mount package with gull-wing leads, 1.3 mm × 2.9 mm footprint, 1.1 mm height, and JEDEC MO-178 compliant dimensions. Thermal resistance RθJA ≈ 320 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biasing the BE junction; requires current-limited drive (e.g., 5 mA max) to achieve specified hFE and VCE(sat). |
| 2 | Emitter | Current return path; connected to ground or low-impedance node in common-emitter configuration; establishes reference for VBE and IE. |
| 3 | Collector | Output current terminal; carries amplified IC = hFE × IB; routed to load or next stage with attention to Cob-induced coupling at high frequencies. |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise amplification | 1.2 dB noise figure at 1 kHz and 200 µA IC - enables high-fidelity audio preamplification without added op-amp complexity. |
| Guaranteed hFE binning | Class B (200–450) - eliminates need for external gain calibration in production-grade analog signal chains. |
| High fT bandwidth | 300 MHz - supports stable small-signal gain in RF detector and IF amplifier stages up to ~100 MHz. |
| Low VCE(sat) | 250 mV @ 100 mA/5 mA - minimizes power loss and self-heating in battery-powered switching nodes. |
Applications
| Portable Audio Preamp | Industrial Sensor Interface |
|---|---|
Use Scenario: Amplifying weak output from electret microphones in Bluetooth headsets and voice-recording modules. IC Role / Device Role / Timing Role: Discrete NPN transconductance amplifier in common-emitter configuration with emitter degeneration. Use Value: 1.2 dB NF ensures >60 dB SNR at 1 kHz; Class B hFE guarantees consistent gain across production units without trimming. | Use Scenario: Conditioning millivolt-level signals from RTD or thermocouple front-ends in programmable logic controllers. IC Role / Device Role / Timing Role: Low-drift, low-noise gain stage preceding ADC input, biased at 200 µA for optimal NF. Use Value: Stable hFE and <1.5 dB NF enable accurate 16-bit measurement resolution without chopper-stabilized ICs. |
| LED Driver Switch | Logic-Level Translator |
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU GPIO pins in medical diagnostic handhelds. IC Role / Device Role / Timing Role: Saturated switch with base driven by current-limiting resistor; configured in common-emitter topology. Use Value: 250 mV VCE(sat) at 20 mA ensures >95% LED forward voltage utilization and minimal thermal rise in SOT-23. | Use Scenario: Level-shifting 1.8 V logic outputs to 5 V inputs in mixed-voltage industrial I/O modules. IC Role / Device Role / Timing Role: Active pull-up switch with emitter tied to 5 V rail and base driven by 1.8 V signal via resistor. Use Value: 30 V VCEO and 100 mA IC allow robust operation across voltage domains; fast turn-on/off supports >10 MHz data rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC849BMTF | Same SOT-23 package and pinout; identical VCEO/IC/PC, but lower noise (1.4 dB NF @ 30–15 kHz band) and hFE = 200–450 (same bin). | Optimized for wider audio bandwidth (30 Hz–15 kHz); less suitable for DC-coupled sensor amps requiring 1 kHz NF spec. | Select BC849BMTF only when full-audio-band noise performance is required; otherwise BC850BMTF offers tighter 1 kHz NF guarantee. |
| MMBT3904LT1G | Same SOT-23 package; VCEO = 40 V, IC = 200 mA, hFE = 100–300 (no binning), NF = 5 dB @ 1 kHz. | Higher voltage/current rating but higher noise; no guaranteed low-noise bin; broader hFE spread increases bias sensitivity. | Choose MMBT3904LT1G for higher-voltage switching where noise is secondary; avoid for precision low-noise amplification. |
Compared with BC849BMTF and MMBT3904LT1G, BC850BMTF delivers the lowest verified 1 kHz noise figure (1.2 dB) within its hFE bin, making it the preferred choice for battery-powered audio and precision analog front-ends where SNR at sub-1 mA bias is critical.
Availability
BC850BMTF is available at Aetrix Electronics and suitable for portable audio preamps, industrial sensor interfaces, and LED driver switches requiring stable component supply, consistent hFE binning, and low-noise performance in SOT-23 form factor.
Supply support for BC850BMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.
The BC846–BC850 series was designed for cost-sensitive, high-volume consumer and industrial applications requiring reliable low-noise NPN transistors in ultra-small SOT-23 packages.
FAQ
What is the hFE range for BC850BMTF?
The BC850BMTF is binned to Class B, with a guaranteed DC current gain (hFE) range of 200 to 450 when measured at VCE = 5 V and IC = 2 mA. This binning ensures predictable bias point stability across production lots, reducing the need for gain-trimming resistors in amplifier designs using BC850BMTF.
Does BC850BMTF support low-noise audio applications?
Yes, BC850BMTF is specified with a noise figure of 1.2 dB at 1 kHz, 200 µA IC, and RG = 2 kΩ, making it suitable for electret microphone preamplifiers and other low-level analog signal conditioning tasks. Its low-noise performance is validated per the BC846–BC850 family datasheet Rev. B1, confirming BC850BMTF's suitability for audio front-ends where SNR is critical.
What is the maximum collector-emitter voltage rating for BC850BMTF?
The BC850BMTF has a maximum collector-emitter voltage (VCEO) rating of 30 V, as defined in the absolute maximum ratings table of the official datasheet. This rating applies under DC conditions at TA = 25°C and must be derated linearly above 25°C ambient temperature per the device's thermal characteristics.
Is BC850BMTF pin-compatible with other transistors in the BC846–BC850 family?
Yes, BC850BMTF uses the standard SOT-23 package with identical 1-Base / 2-Emitter / 3-Collector pinout shared across all BC846–BC850 variants, including BC847BMTF and BC849BMTF. This allows direct substitution within the same family when voltage, current, and noise requirements align, though hFE bin and noise specs differ between part numbers.
What is the typical VCE(sat) for BC850BMTF under switching conditions?
The BC850BMTF exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 250 mV when operated at IC = 100 mA and IB = 5 mA, as specified in the electrical characteristics table. This low saturation voltage minimizes power loss and improves efficiency in high-duty-cycle switching applications such as LED drivers and logic-level translation circuits using BC850BMTF.
BC850BMTF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 310 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
BC850BMTF FAQ
1.How can I place an order for BC850BMTF through Aetrix?
Please submit a Request for Quotation (RFQ) for BC850BMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC850BMTF reliable?
The price and inventory of BC850BMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC850BMTF is usually 5 days.
3.What payment methods are accepted for BC850BMTF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC850BMTF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC850BMTF?
BC850BMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC850BMTF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC850BMTF?
For technical support, including BC850BMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC850BMTF requirements.
6.How does Aetrix verify that BC850BMTF is sourced from the original manufacturer or authorized distributors?
All BC850BMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC850BMTF meets industry standards.
7.What is the process for return or replacement of BC850BMTF?
All BC850BMTF units undergo pre-shipment inspection (PSI). If there is an issue with BC850BMTF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC850BMTF part is unused and in its original packaging.
Return procedure for BC850BMTF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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