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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC850BW,115

Name: BC850BW,115
Brand: Nexperia USA Inc.
SKU: BC850BW,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC850BW,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC850BW,115.pdf

Description:: TRANS NPN 45V 0.1A SOT-323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC850BW,115 from Nexperia is an NPN general-purpose bipolar junction transistor in SOT323 package, rated for 45 V V_CEO, 100 mA I_C, and featuring h_FE of 200–450 at 2 mA/5 V. It serves as a low-noise amplifying device in audio-frequency signal paths, especially in hi-fi preamplifier stages and tape recorder input circuits.

For engineers reviewing the BC850BW,115 datasheet, BC850BW,115 pinout, BC850BW,115 application, or BC850BW,115 equivalent, key selection criteria include DC current gain consistency across bias points, low noise figure (≤4 dB at 1 kHz), V_CEsat ≤ 600 mV at 100 mA, and thermal resistance (625 K/W) on FR4 PCBs.

Technical Context

This transistor operates in linear active mode for analog amplification, with verified h_FE stability from 0.1 mA to 100 mA and V_CE = 5 V. Its low C_c (3 pF) and C_e (11 pF) support stable high-frequency response up to f_T = 100 MHz.

No built-in protection diodes or integrated bias networks are present; external base resistor networks are required for fixed-bias or emitter-degeneration configurations. The device lacks integrated ESD protection beyond standard human-body model ratings inherent to SOT323 plastic packaging.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating range in common-emitter amplifier topologies
I_C (DC)	100 mA - continuous collector current limit; sets upper bound for quiescent bias and small-signal output swing capability
h_FE	200–450 - DC current gain at I_C = 2 mA, V_CE = 5 V; enables predictable base drive calculation for Class-A stages
V_CEsat	≤600 mV at I_C = 100 mA, I_B = 5 mA - low saturation voltage ensures minimal voltage headroom loss in switching or saturated amplifier applications
f_T	100 MHz - transition frequency at I_C = 10 mA, V_CE = 5 V; supports stable gain in audio and low-RF signal conditioning up to ~10 MHz
F (Noise Figure)	≤4 dB at 1 kHz, 200 μA, R_S = 2 kΩ - quantified low-noise performance critical for microphone preamp and phono stage design
R_{th j-a}	625 K/W - junction-to-ambient thermal resistance on FR4 board; determines temperature rise under 200 mW P_tot dissipation

Pinout & Package

SOT323 (SC-70) 3-pin surface-mount plastic package: 1.35 mm × 1.75 mm footprint, 0.95 mm height, gull-wing leads, JEDEC-compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires external bias network to establish operating point in active region
2	Emitter	Common reference terminal for current return path; connected to ground or emitter degeneration resistor in most configurations
3	Collector	Output current sink node; connects to load resistor or next-stage input in CE amplifier topology

Key Features

Feature	Design Value
Low-noise amplification	Verified 4 dB noise figure at 1 kHz enables use in sensitive audio front-ends without added noise degradation
Stable h_FE over bias range	h_FE remains within 200–450 from 0.1 mA to 10 mA I_C, simplifying bias design for consistent gain
Low V_CEsat at high current	≤600 mV at 100 mA allows efficient operation near saturation while retaining linearity in Class-AB output stages
High f_T relative to voltage rating	100 MHz f_T supports wideband audio and IF signal handling without gain roll-off below 10 MHz

Applications

Hi-Fi Preamplifier Input Stage

Tape Recorder Playback Amplifier

Use Scenario: Amplifying low-level signals from moving-magnet phono cartridges or line-level sources with minimal added noise.

IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology providing voltage gain and impedance transformation.

Use Value: 4 dB noise figure and 200–450 h_FE ensure high signal-to-noise ratio and repeatable gain calibration across production units.

Use Scenario: Boosting weak playback signals from magnetic tape heads prior to equalization and further processing.

IC Role / Device Role / Timing Role: Linear amplifying element in discrete transistor-based playback channel with passive EQ network.

Use Value: Low C_c (3 pF) and C_e (11 pF) prevent high-frequency phase shift that would distort tape replay response.

Portable Audio Signal Buffer

Low-Power Sensor Interface Amplifier

Use Scenario: Isolating and level-shifting audio signals between ICs in battery-powered portable devices.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing low-output-impedance drive without inversion.

Use Value: 100 mA I_C rating and 200 mW P_tot allow robust drive into 10 kΩ loads at 3.3 V supply with <100 mV droop.

Use Scenario: Amplifying microvolt-level outputs from thermistors or piezoelectric sensors in industrial monitoring systems.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier in multi-stage sensor signal chain with DC-coupled input.

Use Value: ICBO ≤ 15 nA at 30 V ensures negligible input bias current error when paired with high-impedance sensor elements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC849BW,115	V_CEO = 30 V (vs. 45 V); identical h_FE range and noise performance	Not suitable where supply rail exceeds 30 V or transient spikes exceed 30 V	Select when lower voltage rating suffices and cost sensitivity favors legacy stock availability
MMBT3904LT1G	h_FE = 100–300 (lower min); V_CEsat = 300 mV typical at 10 mA (lower), but higher C_c = 4 pF	Higher gain variation impacts precision biasing; slightly reduced HF bandwidth	Prefer where ultra-low V_CEsat is prioritized over noise or gain consistency

Compared with BC849BW,115 and MMBT3904LT1G, BC850BW,115 uniquely balances 45 V ruggedness, 4 dB noise, and tight h_FE spread-making it optimal for audio preamps requiring both headroom and fidelity.

Availability

BC850BW,115 is available at Aetrix Electronics and suitable for hi-fi preamplifier input stages, tape recorder playback amplifiers, portable audio signal buffers, and low-power sensor interface amplifiers requiring stable component supply and long-term obsolescence management.

Supply support for BC850BW,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, consumer, and wearable markets.

BC850BW,115 belongs to Nexperia's general-purpose bipolar transistor product line, engineered specifically for low-noise, low-voltage analog signal amplification in audio and sensing applications where reliability and parameter consistency are critical.

FAQ

Is BC850BW,115 RoHS compliant and lead-free?

Yes. BC850BW,115 is manufactured in compliance with EU RoHS Directive 2011/65/EU and is lead-free. The SOT323 package uses matte tin (Sn) termination finish, and all homogeneous materials meet the 0.1 wt% lead threshold. Nexperia confirms full compliance via material declarations and third-party lab testing reports.

What is the maximum allowable power dissipation at 70 °C ambient?

At T_amb = 70 °C, derated power dissipation is 120 mW. This is calculated using P_tot(T_amb) = P_tot(25 °C) − [(T_amb − 25) × (1 / R_{th j-a})], where R_{th j-a} = 625 K/W. Exceeding this risks junction temperature exceeding 150 °C, triggering permanent degradation.

Can BC850BW,115 be used in switching applications?

Yes, but only for low-speed, low-duty-cycle switching. Its 100 MHz f_T and 600 mV V_CEsat at 100 mA support turn-on/turn-off times in the 10–50 ns range. However, lack of specified switching parameters (t_on/t_off/t_f) means it should not replace purpose-designed switching transistors in PWM or digital logic interfaces.

What is the guaranteed h_FE at I_C = 100 mA and V_CE = 1 V?

No minimum h_FE is guaranteed at I_C = 100 mA and V_CE = 1 V. The datasheet specifies h_FE only at I_C = 2 mA and V_CE = 5 V (200–450). At high current/low V_CE, h_FE drops significantly-typical values fall to 50–100 per Nexperia's characterization curves (Fig.2), but no production test limit applies.

BC850BW,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 200 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

BC850BW,115 FAQ

1.How can I place an order for BC850BW,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC850BW,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC850BW,115 reliable?

The price and inventory of BC850BW,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC850BW,115 is usually 5 days.

3.What payment methods are accepted for BC850BW,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC850BW,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC850BW,115?

BC850BW,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC850BW,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC850BW,115?

For technical support, including BC850BW,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC850BW,115 requirements.

6.How does Aetrix verify that BC850BW,115 is sourced from the original manufacturer or authorized distributors?

All BC850BW,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC850BW,115 meets industry standards.

7.What is the process for return or replacement of BC850BW,115?

All BC850BW,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC850BW,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC850BW,115 part is unused and in its original packaging.

Return procedure for BC850BW,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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