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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BC850BWE6327HTSA1

Name: BC850BWE6327HTSA1
Brand: Infineon Technologies
SKU: BC850BWE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC850BWE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC850BWE6327HTSA1.pdf

Description:: TRANS NPN 45V 0.1A PG-SOT323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC850BWE6327HTSA1 from Infineon Technologies is an NPN silicon general-purpose bipolar junction transistor (BJT) designed for audio-frequency input stages and driver circuits. It features a DC current gain (h_FE) of 200–450 at I_C = 2 mA, V_CE = 5 V; V_CEO = 45 V; V_CE(sat) ≤ 250 mV at I_C = 10 mA, I_B = 0.5 mA; and low noise (F = 1.2–4 dB, V_n ≤ 0.135 µV) in the 10–50 Hz band - enabling high-fidelity signal amplification in compact analog front-ends.

For engineers reviewing the BC850BWE6327HTSA1 datasheet, BC850BWE6327HTSA1 pinout, BC850BWE6327HTSA1 application, or BC850BWE6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification for automotive use, SOT-323 (SC-70) package footprint, complementary PNP pairing with BC856–BC860 series, and verified low-noise performance below 15 kHz.

Technical Context

This transistor operates as a linear amplifier or saturated switch in low-power analog signal paths. Its h_FE grouping (B-grade: 200–450), low V_CE(sat), and f_T = 250 MHz support stable small-signal gain and fast switching in battery-powered audio preamps and sensor interface stages.

Thermal design relies on R_thJS ≤ 105 K/W (SOT-323 package), with P_tot = 250 mW at T_S ≤ 124 °C. Junction temperature is rated to 150 °C, and it meets RoHS compliance with Pb-free termination.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	45 V - supports rail-to-rail operation in 3.3 V/5 V/12 V analog supply domains without breakdown risk
h_FE (I_C = 2 mA)	200–450 - enables predictable biasing and gain stability across production lots in discrete amplifier stages
V_CE(sat)	≤250 mV @ I_C/I_B = 10 mA/0.5 mA - minimizes conduction loss and self-heating in switching applications
f_T	250 MHz - ensures adequate bandwidth for audio harmonics up to 20 kHz and transient fidelity
Noise figure	1.2–4 dB @ 1 kHz - critical for low-level microphone preamp and sensor signal conditioning
Package	SOT-323 (SC-70) - 2.1 × 2.0 × 0.95 mm footprint compatible with high-density PCB layouts

Pinout & Package

BC850BWE6327HTSA1 is housed in a surface-mount SOT-323 (SC-70) plastic package with gull-wing leads. Thermal resistance from junction to soldering point is ≤105 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to ground or low-impedance return path; defines reference for base drive and collector output swing
2 (Base)	Control input	Receives bias current to modulate collector-emitter conduction; requires current-limiting resistor in most linear applications
3 (Collector)	Output current source	Delivers amplified current to load; polarity and voltage swing determined by external bias network and supply rail

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements (HTOL, TC, HTRB), supporting under-hood and infotainment use
Low noise (10–50 Hz)	V_n ≤ 0.135 µV - preserves SNR in precision sensor front-ends and electret microphone biasing
High h_FE consistency	B-grade binning (200–450) reduces need for post-manufacturing gain trimming in production
Pb-free & RoHS compliant	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C)

Applications

Audio Preamp Stage

Automotive Sensor Interface

Use Scenario: Amplifying weak signals from electret microphones or piezoelectric sensors in voice-controlled modules.

IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology for voltage gain and impedance transformation.

Use Value: Low 1/f noise and stable h_FE ensure consistent gain and minimal audible hiss across operating temperature (−40 °C to +125 °C).

Use Scenario: Conditioning analog outputs from pressure, temperature, or position sensors in engine control units.

IC Role / Device Role / Timing Role: Discrete amplifier stage providing signal level-shifting and buffering before ADC input.

Use Value: AEC-Q101 qualification and 150 °C T_j rating guarantee reliability in high-temperature under-hood environments.

Low-Power Driver Circuit

LED Bias Control

Use Scenario: Driving small relays, optocouplers, or logic-level MOSFET gates in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated switch controlling current flow with minimal V_CE(sat)-induced power loss.

Use Value: V_CE(sat) ≤ 250 mV at I_C = 10 mA reduces thermal load and improves efficiency in space-constrained designs.

Use Scenario: Providing constant-current bias for indicator LEDs or status lights in automotive dashboards.

IC Role / Device Role / Timing Role: Linear current regulator using emitter-degeneration resistor and fixed base bias.

Use Value: Tight h_FE binning ensures repeatable LED brightness across batches without individual calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BW	V_CEO = 45 V, h_FE = 200–450 (same grade), but lower P_tot = 250 mW in SOT-23 vs. SOT-323; identical noise specs	Larger SOT-23 footprint; less suitable for ultra-dense layouts where SC-70 is required	Select when board real estate allows larger package and thermal margin is higher
MMBT3904LT1G	V_CEO = 40 V (5 V lower), h_FE = 100–300 (wider spread), f_T = 300 MHz, no AEC-Q101 qualification	Not automotive-qualified; higher f_T offers marginal RF benefit but no low-noise advantage below 15 kHz	Choose only for cost-sensitive non-automotive consumer applications requiring higher f_T

Compared with BC847BW and MMBT3904LT1G, BC850BWE6327HTSA1 uniquely combines AEC-Q101 qualification, low-noise performance below 50 Hz, and SOT-323 packaging - making it optimal for space-constrained, thermally sensitive automotive and industrial analog signal chains where gain consistency and noise floor matter.

Availability

BC850BWE6327HTSA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, audio preamplifiers, and low-power driver circuits requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for BC850BWE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BC846–BC850 family belongs to Infineon's high-reliability general-purpose BJT product line, engineered for low-noise, high-gain analog signal conditioning in automotive and industrial environments.

FAQ

Is BC850BWE6327HTSA1 pin-compatible with BC847BW?

No - BC850BWE6327HTSA1 uses SOT-323 (SC-70) packaging with 1–2–3 pin order (E–B–C), while BC847BW uses SOT-23 with identical pinout but larger footprint and different thermal profile. Mechanical replacement requires PCB redesign.

What is the maximum continuous collector current for BC850BWE6327HTSA1?

The absolute maximum continuous collector current is 100 mA at T_A = 25 °C. Derating applies above 71 °C ambient; at T_S = 124 °C, P_tot drops to 250 mW, limiting practical I_C to ~70 mA depending on V_CE and layout thermal resistance.

Does BC850BWE6327HTSA1 support pulsed operation beyond its DC ratings?

Yes - pulse testing (t_p ≤ 10 ms, duty cycle < 2%) allows peak I_C up to 200 mA. The permissible pulse load curve shows P_tot(max)/P_tot(DC) ratio increases with shorter t_p, reaching ~5× at t_p = 100 µs.

Can BC850BWE6327HTSA1 replace BC850C in existing designs?

Only if gain tolerance permits - BC850B has h_FE = 200–450, while BC850C is 420–800. Substituting B for C may reduce circuit gain or require bias adjustment. Verify stability and output swing in final application before change.

BC850BWE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BC850BWE6327HTSA1 FAQ

1.How can I place an order for BC850BWE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC850BWE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC850BWE6327HTSA1 reliable?

The price and inventory of BC850BWE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC850BWE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BC850BWE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC850BWE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC850BWE6327HTSA1?

BC850BWE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC850BWE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC850BWE6327HTSA1?

For technical support, including BC850BWE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC850BWE6327HTSA1 requirements.

6.How does Aetrix verify that BC850BWE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BC850BWE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC850BWE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BC850BWE6327HTSA1?

All BC850BWE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC850BWE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC850BWE6327HTSA1 part is unused and in its original packaging.

Return procedure for BC850BWE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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