Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors BC856AT,115

Name: BC856AT,115
Brand: NXP Semiconductors
SKU: BC856AT,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BC856AT,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: SC-75, SOT-416

Datasheet:: BC856AT,115.pdf

Description:: TRANS PNP 65V 0.1A SC-75

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,869

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BC856AT,115 from Nexperia is a PNP general purpose transistor in SC-75 (SOT416) package, rated for −65 V V_CEO, −80 V V_CBO, and −100 mA I_C, with DC current gain (h_FE) of 125–250 at −2 mA I_C. It serves as a low-power switching and amplification device in portable battery-powered circuits.

For engineers reviewing the BC856AT,115 datasheet, BC856AT,115 pinout, BC856AT,115 application, or BC856AT,115 equivalent, key selection criteria include its PNP polarity, SOT416 footprint compatibility, −200 mV V_CEsat at −10 mA/−0.5 mA drive, thermal resistance of 833 K/W, and −5 V V_EBO rating for emitter-base reverse tolerance.

Technical Context

This discrete PNP bipolar junction transistor operates in linear or saturated switching modes with fixed base-emitter forward biasing. Its h_FE range (125–250) and low saturation voltage support stable current-controlled gain in low-voltage analog stages and digital logic interfacing.

Designed for ambient temperatures from −65 °C to +150 °C and junction temperatures up to 150 °C, it uses FR4 PCB mounting per IEC 60134 limiting values, with thermal resistance (R_{th j-a}) of 833 K/W confirming suitability for low-power dissipation applications without heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V: Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating voltage in common-emitter switch configurations.
h_FE	125–250 at −2 mA I_C: Predictable DC current gain enabling precise base drive calculation for reliable saturation or linear operation.
V_CEsat	−200 mV max at −10 mA I_C/−0.5 mA I_B: Low saturation voltage minimizes power loss and heat generation in switching applications.
P_tot	150 mW at T_amb ≤ 25 °C: Total power dissipation limit constrains continuous operation in compact layouts without forced cooling.
f_T	100 MHz: Transition frequency supports small-signal amplification up to VHF band, suitable for RF preamp or oscillator bias stages.
R_{th j-a}	833 K/W: Junction-to-ambient thermal resistance confirms thermal performance on standard FR4 board without copper pour enhancement.

Pinout & Package

BC856AT,115 is housed in a plastic surface-mounted SC-75 (SOT416) package measuring 1.75 × 1.45 × 0.9 mm (L × W × H), with gull-wing leads optimized for automated placement and reflow soldering on high-density PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for injecting forward bias current; requires series resistor to limit I_B and ensure predictable h_FE-based I_C scaling.
2	Emitter	Current source terminal in PNP configuration; connected to higher potential rail (e.g., V_CC) in common-emitter switches.
3	Collector	Current sink terminal; delivers controlled load current to ground or lower-potential node when saturated.

Key Features

Feature	Design Value
Low-voltage PNP switching	Rated for −65 V V_CEO and −80 V V_CBO, enabling use in 24 V and lower automotive and industrial control rails.
Precision h_FE binning	125–250 gain range at −2 mA ensures consistent base drive requirements across production lots for stable circuit behavior.
Low saturation loss	−200 mV V_CEsat at −10 mA/−0.5 mA reduces conduction loss by >30% vs. generic transistors, improving efficiency in battery-operated devices.
High-temperature operation	Rated for T_j up to 150 °C and T_amb from −65 °C to +150 °C, supporting deployment in under-hood or industrial enclosure environments.

Applications

Portable Power Management	Level-Shifting Interface
Use Scenario: Controlling LED backlight or sensor bias in handheld medical monitors and wearables powered by single-cell Li-ion batteries. IC Role / Device Role / Timing Role: PNP switch enabling high-side sourcing of current to loads referenced to V_BAT, with fast turn-off via base pull-up. Use Value: −200 mV V_CEsat preserves >98% of battery voltage across the switch, extending runtime in milliamp-level load applications.	Use Scenario: Translating 3.3 V logic signals to 5 V domains in mixed-voltage microcontroller peripherals. IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-emitter inversion to interface between voltage domains. Use Value: 100 MHz f_T and <2.5 pF C_c support clean signal edges up to 10 MHz without added propagation delay or ringing.
Low-Power Sensor Amplifier	Industrial Pushbutton Debounce
Use Scenario: Amplifying weak thermistor or photodiode currents in battery-powered environmental sensors. IC Role / Device Role / Timing Role: Linear-mode PNP amplifier stage with fixed emitter degeneration for stable transconductance and temperature compensation. Use Value: h_FE of 125–250 at −2 mA enables predictable gain setting with minimal base current error, reducing calibration drift.	Use Scenario: Debouncing mechanical pushbuttons in programmable logic controllers and HVAC control panels. IC Role / Device Role / Timing Role: Digital switch driving optocoupler input or microcontroller GPIO with clean, bounce-free edges. Use Value: −400 mV V_CEsat at −100 mA ensures full saturation even under worst-case I_B degradation over 10+ year field life.

Portable Power Management

Level-Shifting Interface

Use Scenario: Controlling LED backlight or sensor bias in handheld medical monitors and wearables powered by single-cell Li-ion batteries.

IC Role / Device Role / Timing Role: PNP switch enabling high-side sourcing of current to loads referenced to V_BAT, with fast turn-off via base pull-up.

Use Value: −200 mV V_CEsat preserves >98% of battery voltage across the switch, extending runtime in milliamp-level load applications.

Use Scenario: Translating 3.3 V logic signals to 5 V domains in mixed-voltage microcontroller peripherals.

IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-emitter inversion to interface between voltage domains.

Use Value: 100 MHz f_T and <2.5 pF C_c support clean signal edges up to 10 MHz without added propagation delay or ringing.

Low-Power Sensor Amplifier

Industrial Pushbutton Debounce

Use Scenario: Amplifying weak thermistor or photodiode currents in battery-powered environmental sensors.

IC Role / Device Role / Timing Role: Linear-mode PNP amplifier stage with fixed emitter degeneration for stable transconductance and temperature compensation.

Use Value: h_FE of 125–250 at −2 mA enables predictable gain setting with minimal base current error, reducing calibration drift.

Use Scenario: Debouncing mechanical pushbuttons in programmable logic controllers and HVAC control panels.

IC Role / Device Role / Timing Role: Digital switch driving optocoupler input or microcontroller GPIO with clean, bounce-free edges.

Use Value: −400 mV V_CEsat at −100 mA ensures full saturation even under worst-case I_B degradation over 10+ year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC856B,115	Higher h_FE range (220–475) at −2 mA I_C; otherwise identical ratings and package.	Preferred where lower base drive current is required, e.g., in ultra-low-power microcontroller GPIO-driven switches.	Select BC856B,115 only if tighter h_FE consistency or reduced I_B is critical; BC856AT,115 offers broader gain margin for variable-temperature designs.
MMBT3906LT1G	SOT-23 package (larger footprint); V_CEO = −40 V; h_FE = 100–300; R_{th j-a} = 405 K/W.	Used where higher power dissipation (300 mW) or legacy SOT-23 layout compatibility is required.	Choose MMBT3906LT1G only if board space allows SOT-23 or thermal budget exceeds 150 mW; BC856AT,115 provides superior density and voltage margin in SOT416-constrained designs.

Compared with BC856B,115 and MMBT3906LT1G, BC856AT,115 delivers optimal balance of voltage headroom (−65 V), gain predictability (125–250), and miniaturized SOT416 packaging-making it ideal for space-constrained, battery-sensitive applications where moderate h_FE stability is prioritized over maximum gain or power handling.

Availability

BC856AT,115 is available at Aetrix Electronics and suitable for portable power management, level-shifting interfaces, low-power sensor amplifiers, and industrial pushbutton debounce circuits requiring stable component supply and long-term obsolescence resilience.

Supply support for BC856AT,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, consumer, and wearable markets with high-volume, high-reliability components.

The BC856AT,115 belongs to Nexperia's BC856T/BC857T series of PNP general purpose transistors, engineered for robust low-current switching and amplification in space-constrained, battery-powered systems.

FAQ

What is the maximum collector-emitter voltage rating for BC856AT,115?

The BC856AT,115 has a maximum collector-emitter voltage (V_CEO) rating of −65 V under open-base conditions. This value is confirmed in the Absolute Maximum Ratings table of the official Nexperia datasheet and defines the upper limit for safe operation in common-emitter configurations without risk of avalanche breakdown.

Does BC856AT,115 have a specified transition frequency (f_T)?

Yes, BC856AT,115 has a minimum transition frequency (f_T) of 100 MHz, measured at I_C = −10 mA, V_CE = −5 V, and f = 100 MHz. This parameter is explicitly listed in the Characteristics section and confirms suitability for small-signal amplification up to VHF frequencies.

What is the thermal resistance from junction to ambient (R_{th j-a}) for BC856AT,115?

The thermal resistance from junction to ambient (R_{th j-a}) for BC856AT,115 is 833 K/W when mounted on an FR4 printed-circuit board, as specified in the Thermal Characteristics section. This value assumes natural convection in free air and informs thermal design margins for continuous 150 mW operation.

Is BC856AT,115 pin-compatible with BC856B,115?

Yes, BC856AT,115 and BC856B,115 share identical SC-75 (SOT416) package dimensions, pinout (base-emitter-collector on pins 1–2–3), and absolute maximum ratings. The only difference is h_FE binning: BC856AT,115 is 125–250 while BC856B,115 is 220–475 - both are drop-in replacements in the same footprint.

What is the typical base-emitter voltage (V_BE) of BC856AT,115 at −2 mA collector current?

The typical base-emitter voltage (V_BE) of BC856AT,115 is −640 mV at I_C = −2 mA and V_CE = −5 V, with a guaranteed range of −580 mV to −700 mV. This value is documented in the Characteristics table and is essential for accurate base bias network design.

BC856AT,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 65 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 125 @ 2mA, 5V

Power - Max:: 150 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75

BC856AT,115 FAQ

1.How can I place an order for BC856AT,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856AT,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856AT,115 reliable?

The price and inventory of BC856AT,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856AT,115 is usually 5 days.

3.What payment methods are accepted for BC856AT,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856AT,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856AT,115?

BC856AT,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856AT,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856AT,115?

For technical support, including BC856AT,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856AT,115 requirements.

6.How does Aetrix verify that BC856AT,115 is sourced from the original manufacturer or authorized distributors?

All BC856AT,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856AT,115 meets industry standards.

7.What is the process for return or replacement of BC856AT,115?

All BC856AT,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC856AT,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856AT,115 part is unused and in its original packaging.

Return procedure for BC856AT,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…