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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC856B,215

Name: BC856B,215
Brand: Nexperia USA Inc.
SKU: BC856B,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC856B,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BC856B,215.pdf

Description:: TRANS PNP 65V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC856B,215 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT23 (TO-236AB) package, rated for −65 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 220–475 at V_CE = −5 V and I_C = −2 mA. It serves as a low-voltage, low-current switching or amplification device in compact consumer and industrial PCBs.

For engineers reviewing the BC856B,215 datasheet, BC856B,215 pinout, BC856B,215 application, or BC856B,215 equivalent, this page delivers verified pin functions, thermal resistance (500 K/W), saturation voltages (V_CEsat ≤ −650 mV @ I_C = −100 mA), noise figure (2–10 dB), and real-world use cases in level-shifting, signal inversion, and discrete logic interfacing.

Technical Context

This PNP BJT operates with open-base collector-emitter breakdown of −65 V and emitter-base breakdown of −5 V, supporting reliable cutoff and active-region biasing in low-power analog and digital circuits. Its f_T of 100 MHz enables stable operation up to audio and low-RF frequencies.

The device exhibits V_BEsat ≤ −850 mV at I_C = −100 mA / I_B = −5 mA and C_c = 4.5 pF at V_CB = −10 V, making it suitable for fast-switching applications where charge storage and Miller capacitance must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V - Maximum safe collector-emitter voltage with base open; defines high-side switch headroom in 48 V or lower systems.
I_C	−100 mA - Continuous DC collector current rating; supports load switching up to ~100 mA with adequate heatsinking on FR4.
h_FE	220–475 @ V_CE = −5 V, I_C = −2 mA - Predictable current amplification range enabling stable bias design without excessive base drive overhead.
V_CEsat	≤ −650 mV @ I_C = −100 mA, I_B = −5 mA - Low saturation voltage minimizes power loss and heating in switching mode.
R_th(j-a)	500 K/W - Junction-to-ambient thermal resistance on standard FR4 PCB; informs derating above 25 °C ambient.
f_T	100 MHz - Transition frequency confirming usable bandwidth for audio amplification and digital signal conditioning.
NF	2–10 dB @ I_C = −200 µA, V_CE = −5 V - Noise performance suitable for pre-amplifier stages in sensor interfaces.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; 1.9 mm × 1.1 mm footprint, 0.9 mm height, and standard reflow-compatible solder land pattern (0.6 mm pad width).

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Current-controlled input node; requires negative bias relative to emitter to forward-bias base-emitter junction.
2	Emitter (E)	Common reference terminal; connected to higher potential in PNP configurations (e.g., V_CC rail).
3	Collector (C)	Output current sink node; carries load current when transistor is saturated or in active region.

Key Features

Feature	Design Value
Low-voltage PNP switching	Rated for −65 V V_CEO and −80 V V_CBO, enabling robust operation in 24–48 V supply rails with margin.
Controlled h_FE binning	220–475 gain range ensures consistent base drive requirements across production lots for predictable bias network design.
Low saturation voltage	V_CEsat ≤ −650 mV at full rated current reduces conduction loss and thermal stress in high-duty-cycle switches.
Small-outline SMT package	SOT23 footprint allows high-density placement in space-constrained applications such as wearables and IoT nodes.
Thermal reliability	150 °C max junction temperature and 500 K/W R_th(j-a) support operation in sealed enclosures up to 85 °C ambient.

Applications

LED Driver Circuit

Microcontroller Level Shifter

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins with inverted logic control.

IC Role / Device Role / Timing Role: PNP switch sinking current from V_CC through LED to ground; provides active-low output with minimal external components.

Use Value: Eliminates need for pull-up resistors or additional logic gates; V_CEsat ≤ −650 mV ensures >2.6 V forward drop across LED at full brightness.

Use Scenario: Translating 5 V logic signals down to 3.3 V for MCU input protection without loading the source.

IC Role / Device Role / Timing Role: Discrete level shifter using emitter-follower configuration with base tied to 3.3 V reference.

Use Value: Delivers rail-to-rail 3.3 V output swing with <10 ns propagation delay; avoids timing skew introduced by passive resistor dividers.

Discrete Logic Inverter

Power Supply Enable Switch

Use Scenario: Constructing non-inverting buffer stages or Schmitt-trigger inputs in legacy analog-digital hybrid systems.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased for digital inversion with h_FE-stabilized base resistor network.

Use Value: Provides clean 0 V / V_CC output swing with rise/fall times <50 ns; supports 100 kHz clock distribution in test fixtures.

Use Scenario: Enabling/disabling 12 V auxiliary rails in embedded gateways based on MCU GPIO state.

IC Role / Device Role / Timing Role: High-side switch controlling PMOS gate drive or optocoupler anode path.

Use Value: Withstands −65 V V_CEO, allowing direct connection to 12 V rail; I_C rating supports >50 mA enable current for downstream regulators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857B,215	V_CEO = −45 V (vs. −65 V); identical h_FE range (220–475) and SOT23 package.	Lower voltage rating limits use in 48 V systems but improves leakage and switching speed at ≤36 V rails.	Select when operating voltage ≤40 V and faster turn-off is prioritized over headroom.
BC846B,215	NPN complement; same h_FE, package, and ratings (65 V V_CEO, 100 mA I_C), opposite polarity.	Requires inverted control logic and different bias topology; not drop-in but functionally symmetric in complementary designs.	Choose for NPN-based circuits or when building complementary pair stages with BC856B.

Compared with BC857B,215, BC856B,215 offers 20 V higher V_CEO margin for industrial 48 V systems; versus BC846B,215, it enables high-side switching without level-shifting circuitry, simplifying board layout in mixed-polarity designs.

Availability

BC856B,215 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface logic, discrete inverter stages, and power rail enable switching requiring stable component supply across production volumes.

Supply support for BC856B,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for mass-market electronics.

The BC856 series belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume applications demanding proven reliability, tight gain binning, and industry-standard SMT compatibility.

FAQ

Is BC856B,215 suitable for automotive applications?

No. BC856B,215 is not automotive-qualified per Nexperia's revision history (v.9, July 2022), which explicitly states non-automotive qualification. It lacks AEC-Q101 testing and automotive-grade process controls. For automotive use, select Nexperia's −Q qualified variants like BC856B-Q.

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current (I_BM) is −200 mA, but continuous operation must respect the total power dissipation limit of 250 mW at T_amb ≤ 25 °C. At I_C = −100 mA and h_FE = 220, typical I_B is −455 µA-well within safe limits. Derate linearly above 25 °C ambient using R_th(j-a) = 500 K/W.

Can BC856B,215 replace BC856B in existing designs?

Yes. The suffix ",215" denotes Nexperia's standard tape-and-reel packaging (7" reel, 3000 pcs) and does not affect electrical or mechanical specifications. All parametric values, pinout, and SOT23 footprint match BC856B as defined in the Rev. 9 datasheet.

How does thermal resistance change with PCB copper weight or layer count?

R_th(j-a) = 500 K/W is measured on a single-sided FR4 PCB with 35 µm (1 oz) copper. Doubling copper thickness to 70 µm reduces R_th(j-a) by ~15%; adding internal ground/power planes can lower it to ~300 K/W. Actual values require thermal simulation or empirical measurement under your specific layout.

BC856B,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 65 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BC856B,215 FAQ

1.How can I place an order for BC856B,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856B,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856B,215 reliable?

The price and inventory of BC856B,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856B,215 is usually 5 days.

3.What payment methods are accepted for BC856B,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856B,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856B,215?

BC856B,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856B,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856B,215?

For technical support, including BC856B,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856B,215 requirements.

6.How does Aetrix verify that BC856B,215 is sourced from the original manufacturer or authorized distributors?

All BC856B,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856B,215 meets industry standards.

7.What is the process for return or replacement of BC856B,215?

All BC856B,215 units undergo pre-shipment inspection (PSI). If there is an issue with BC856B,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856B,215 part is unused and in its original packaging.

Return procedure for BC856B,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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