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Nexperia USA Inc. BC856BW/DG/B2,115
- Part No.:
- BC856BW/DG/B2,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC856BW/DG/B2,115.pdf
- Description:
- TRANS PNP 65V 0.1A SOT-323
- Quantity:
- Payment:
- Shipping:
Inventory:5,017
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Product details
Overview
BC856BW/DG/B2,115 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT323 (SC-70) package, rated for −65 V VCEO, −100 mA IC, and DC current gain (hFE) of 220–475 at VCE = −5 V, IC = −2 mA. It serves as a low-power switching or linear amplification device in compact consumer, industrial, and communication signal-path circuits.
For engineers reviewing the BC856BW/DG/B2,115 datasheet, BC856BW/DG/B2,115 pinout, BC856BW/DG/B2,115 application, or BC856BW/DG/B2,115 equivalent, this page delivers verified electrical parameters, terminal roles, thermal limits, real-world use cases, and validated alternative parts - all aligned to Nexperia's Rev. 4 (July 2023) product data sheet.
Technical Context
This PNP BJT operates with open-base collector-emitter breakdown voltage of −65 V and emitter-base breakdown voltage of −5 V, supporting reliable cutoff and saturation in low-voltage bias networks. Its hFE range (220–475) ensures consistent current amplification across production lots at IC = −2 mA.
VCE(sat) is specified at −250 mV (max) for IC = −100 mA / IB = −5 mA, enabling efficient switching in battery-powered logic interfaces. Thermal resistance Rth(j-a) is 625 K/W on FR4 PCB, defining safe power dissipation limits under natural convection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −65 V: Maximum allowable collector-emitter voltage before breakdown in open-base configuration. |
| IC | −100 mA: Continuous DC collector current rating; defines maximum load drive capability in active/switching modes. |
| hFE | 220–475 @ VCE = −5 V, IC = −2 mA: Confirmed DC current gain range for stable bias design and predictable amplification. |
| VCE(sat) | −250 mV max @ IC = −100 mA, IB = −5 mA: Low saturation voltage enables minimal power loss during switch-on state. |
| Ptot | 200 mW @ Tamb ≤ 25 °C: Total power dissipation limit on standard FR4 PCB, constraining thermal design margin. |
| Rth(j-a) | 625 K/W: Junction-to-ambient thermal resistance; determines temperature rise per watt under free-air conditions. |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.8 mm footprint, 0.45 mm height, 3-terminal leadless construction optimized for high-density PCB layouts and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | B (Base) | Control terminal; forward-biased with negative voltage relative to emitter to enable conduction. |
| 2 | E (Emitter) | Current source terminal; connected to higher potential in PNP operation; sets reference for base-emitter junction. |
| 3 | C (Collector) | Output terminal; sinks current from load when transistor is active; reverse-biased relative to emitter during cutoff. |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage PNP switching | Rated for −65 V VCEO, supporting robust operation in 24 V and lower rail systems without derating. |
| High-current-gain binning | hFE = 220–475 (BC856BW grade) enables precise biasing with reduced base-drive current requirements. |
| Ultra-compact SMT package | SOT323 footprint (1.35 × 1.8 mm) allows placement in space-constrained modules such as wearables and sensor nodes. |
| Low saturation voltage | VCE(sat) ≤ −250 mV at full rated current minimizes conduction loss in discrete switch applications. |
Applications
| LED Driver Circuit | Level-Shifting Interface |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins with inverted logic control. IC Role / Device Role / Timing Role: Discrete PNP switch providing active-low current sink path with fast turn-off due to low Cc (3 pF). Use Value: Enables direct GPIO interfacing without external level translators; VBE(sat) ≤ −850 mV ensures sufficient base drive at 3.3 V. |
Use Scenario: Translating 1.8 V logic outputs to 5 V-compatible inputs in mixed-supply digital subsystems. IC Role / Device Role / Timing Role: Active-pull-up inverter stage using emitter-follower or common-emitter configuration. Use Value: hFE ≥ 220 guarantees stable gain across temperature; low VCE(sat) preserves noise margin at 5 V rail. |
| Signal Amplifier Stage | Power Supply Enable Switch |
Use Scenario: Low-noise preamplification of audio or sensor signals in portable devices operating from single 3 V supply. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network and bypassed emitter resistor. Use Value: NF = 2 dB @ 1 kHz confirms suitability for sub-10 µV signal conditioning; fT = 100 MHz supports bandwidth up to ~1 MHz. |
Use Scenario: Enabling/disabling 12 V auxiliary rails in embedded controllers via 3.3 V MCU output. IC Role / Device Role / Timing Role: High-side switch controlling PMOS gate or relay coil with controlled slew rate. Use Value: −65 V VCEO provides 5× safety margin over 12 V rail; ICM = −200 mA handles inrush transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BW | VCEO = −45 V; same hFE range (220–475); identical SOT323 package and pinout. | Lower voltage rating restricts use to ≤36 V systems; otherwise functionally interchangeable in 24 V and below designs. | Select when system VCC ≤ 36 V and cost optimization is prioritized over voltage headroom. |
| BC846BW | NPN complement; same package, pinout, and hFE binning; VCEO = +65 V, IC = +100 mA. | Requires inverted control logic and complementary biasing; used where NPN topology simplifies circuit layout or matches existing NPN-based designs. | Choose for NPN-based switching or amplification where polarity alignment with upstream drivers is required. |
Compared with BC856BW/DG/B2,115, BC857BW trades 20 V of collector-emitter voltage margin for equivalent gain and footprint, while BC846BW offers complementary NPN functionality with identical mechanical and gain specifications - enabling direct topology substitution where polarity permits.
Availability
BC856BW/DG/B2,115 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, signal amplifier stages, and power supply enable switches requiring stable component supply, tight hFE binning, and SOT323 footprint consistency.
Supply support for BC856BW/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BC856W series belongs to Nexperia's general-purpose bipolar transistor product line, engineered for cost-sensitive, space-constrained applications demanding proven performance, tight parametric consistency, and long-term manufacturability in SMT assembly.
FAQ
What is the maximum junction temperature for BC856BW/DG/B2,115?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in Table 6 of the Nexperia datasheet Rev. 4. Operation above this limit risks permanent degradation of hFE and increased leakage. Derating is required above 25 °C ambient per the Rth(j-a) = 625 K/W thermal resistance value.
Does BC856BW/DG/B2,115 have automotive qualification?
No. The BC856BW/DG/B2,115 is not automotive-qualified per Nexperia's legal disclaimers (Section 14). It is intended for industrial, consumer, and communications applications only. Automotive use requires explicit AEC-Q101 qualification, which this part does not hold.
How does the BC856BW hFE bin differ from BC856AW and BC856W?
BC856BW has hFE = 220–475 at VCE = −5 V, IC = −2 mA; BC856AW is 125–250; BC856W is 125–475. The BW grade provides tighter high-gain consistency critical for precision biasing, whereas AW targets moderate-gain stability and W covers full-range variability.
Can BC856BW/DG/B2,115 replace BC856B in through-hole designs?
No. BC856BW/DG/B2,115 uses SOT323 (SC-70), a surface-mount package incompatible with through-hole footprints like TO-92 or SOT23. Mechanical replacement requires PCB redesign. Electrical equivalence exists only with matching package type and thermal mounting conditions.
BC856BW/DG/B2,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 65 V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 220 @ 2mA, 5V
- Power - Max:
- 200 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BC856BW/DG/B2,115 FAQ
1.How can I place an order for BC856BW/DG/B2,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC856BW/DG/B2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC856BW/DG/B2,115 reliable?
The price and inventory of BC856BW/DG/B2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856BW/DG/B2,115 is usually 5 days.
3.What payment methods are accepted for BC856BW/DG/B2,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856BW/DG/B2,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC856BW/DG/B2,115?
BC856BW/DG/B2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC856BW/DG/B2,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC856BW/DG/B2,115?
For technical support, including BC856BW/DG/B2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856BW/DG/B2,115 requirements.
6.How does Aetrix verify that BC856BW/DG/B2,115 is sourced from the original manufacturer or authorized distributors?
All BC856BW/DG/B2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856BW/DG/B2,115 meets industry standards.
7.What is the process for return or replacement of BC856BW/DG/B2,115?
All BC856BW/DG/B2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC856BW/DG/B2,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC856BW/DG/B2,115 part is unused and in its original packaging.
Return procedure for BC856BW/DG/B2,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC856BW/DG/B2,115 Tags
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