Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi BC856CMTF

Part No.:
BC856CMTF
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC856CMTF.pdf
Description:
TRANS PNP 65V 0.1A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,906

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC856CMTF from ON Semiconductor is a PNP epitaxial silicon transistor in SOT-23 package, rated for -65 V VCEO, -100 mA IC, and 310 mW power dissipation, with hFE of 420–800 at -5 V VCE and -2 mA IC, used in low-noise amplifier and general-purpose switching circuits.

For engineers reviewing the BC856CMTF datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, validated SOT-23 terminal mapping, confirmed hFE classification (C-grade), noise figure (2–10 dB), and direct alternatives for discrete PNP switching/amplifier design.

Technical Context

The BC856CMTF operates as a medium-voltage, medium-current PNP bipolar junction transistor optimized for linear amplification and saturated switching. Its hFE range (420–800) enables high-current gain stability across bias conditions, while its fT of 150 MHz supports RF-capable small-signal amplification up to VHF bands.

Designed as a complement to BC846–BC850 NPN series, it shares identical SOT-23 footprint and thermal characteristics (TJ = 150°C, TSTG = −65 to 150°C). Low VCE(sat) (−90 mV typ. at −10 mA/−0.5 mA) and VBE(sat) (−700 mV typ.) ensure efficient operation in low-voltage logic-level drive applications.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −65 V: Maximum collector-emitter voltage before breakdown in common-emitter configuration, enabling use in 48 V rail and industrial control circuits.
IC (DC) −100 mA: Continuous collector current rating, supporting moderate-power load switching and driver-stage amplification.
hFE 420–800 at VCE = −5 V, IC = −2 mA: High DC current gain ensures minimal base drive requirement in amplifier and switch bias networks.
fT 150 MHz: Current gain–bandwidth product confirms suitability for audio and low-VHF signal amplification without external compensation.
NF 2–10 dB at VCE = −5 V, IC = −200 µA, RG = 2 kΩ, f = 1 kHz: Low noise performance validated for preamplifier and sensor interface stages.
Cob 6 pF at VCB = −10 V: Output capacitance limits high-frequency roll-off and defines bandwidth in tuned amplifier designs.

Pinout & Package

SOT-23 plastic surface-mount package with gull-wing leads, 1.90 mm × 1.30 mm body size, 0.95 mm lead pitch, and JEDEC-compliant thermal profile (PC = 310 mW at TA = 25°C).

Pin/Terminal Circuit Role Design Meaning
1 Base Control electrode for forward-active and saturation biasing; requires current-limited drive due to hFE-dependent base current demand.
2 Emitter Current source terminal in PNP configuration; connected to higher potential rail in common-emitter switching topologies.
3 Collector Output current sink terminal; voltage swing limited by VCEO = −65 V and thermal derating above 25°C ambient.

Key Features

Feature Design Value
hFE Classification C Guaranteed 420–800 gain range enables predictable bias point selection without post-manufacture sorting.
Low VCE(sat) −90 mV typical at −10 mA/−0.5 mA ensures <1% voltage drop in saturated switching, reducing power loss in digital logic interfaces.
Low-noise operation 2 dB noise figure (BC856/857/858 group) supports high-SNR analog front-ends in sensor signal conditioning.
Complementary pairing Direct match to BC846–BC850 NPN family allows matched push-pull and differential pair implementation with consistent thermal behavior.

Applications

Audio Pre-amplifier Stage Industrial Logic-Level Interface

Use Scenario: Amplifying weak microphone or piezoelectric sensor signals in battery-powered portable audio devices.

IC Role / Device Role / Timing Role: Discrete PNP transistor configured in common-emitter topology for voltage gain with emitter degeneration.

Use Value: 420–800 hFE and 2 dB noise figure enable >60 dB SNR at 1 kHz with minimal component count and no active feedback compensation.

Use Scenario: Level-shifting 3.3 V microcontroller outputs to drive 12 V relay coils or optocoupler inputs in PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated PNP switch with base resistor network controlling collector current sink to ground-referenced loads.

Use Value: −90 mV VCE(sat) and −700 mV VBE(sat) minimize conduction loss and ensure reliable turn-on with standard GPIO drive capability.

Automotive Body Control Module Consumer Appliance Power Sequencing

Use Scenario: Driving LED status indicators and small solenoids in 12 V automotive cabin electronics with ESD and load-dump tolerance.

IC Role / Device Role / Timing Role: General-purpose PNP switch handling intermittent 100 mA loads with built-in VCEO margin against transients.

Use Value: −65 V VCEO and 150°C TJ rating support operation in under-hood temperature environments without derating below 80 mA.

Use Scenario: Enabling sequential power-up of subsystems (e.g., display backlight before main MCU) in smart home appliances using discrete timing RC networks.

IC Role / Device Role / Timing Role: PNP-based delay element where base charging time controls collector conduction onset.

Use Value: Tight hFE distribution (C-grade) ensures repeatable RC time constants across production batches, eliminating calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC856BMTF hFE = 200–450 (B-grade), otherwise identical absolute ratings and pinout. Lower gain reduces base drive sensitivity but increases consistency in high-temperature switching where hFE drift matters. Select BC856BMTF when stable on/off behavior under thermal stress is prioritized over maximum small-signal gain.
MMBT856 Same die, same hFE C-grade spec, but marked as MMBT856 and distributed by ON Semiconductor under legacy Fairchild branding. No functional difference; used interchangeably in new designs where part number consolidation is required. Choose MMBT856 when sourcing through ON Semiconductor's consolidated catalog or when aligning with post-integration part numbering conventions.

Compared with BC856CMTF, BC856BMTF trades gain bandwidth for thermal stability in saturated switching, while MMBT856 offers identical electrical performance with updated nomenclature-both preserve SOT-23 footprint and require no layout change.

Availability

BC856CMTF is available at Aetrix Electronics and suitable for industrial control systems, consumer audio signal chains, and automotive body electronics requiring stable component supply with guaranteed hFE grading and tape-and-reel delivery.

Supply support for BC856CMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and discrete components for automotive, industrial, and cloud infrastructure markets.

The BC856CMTF belongs to ON Semiconductor's legacy Fairchild discrete transistor portfolio, designed specifically for cost-sensitive, high-volume PNP switching and amplification applications demanding tight hFE binning and robust SOT-23 reliability.

FAQ

What is the hFE range specified for BC856CMTF?

The BC856CMTF is classified as "C-grade", with a guaranteed DC current gain (hFE) range of 420 to 800 measured at VCE = −5 V and IC = −2 mA. This binning ensures consistent biasing in amplifier and switching circuits without post-production gain screening. The BC856CMTF datasheet confirms this specification under the hFE Classification table.

Does BC856CMTF support low-noise audio applications?

Yes, BC856CMTF is validated for low-noise operation with a noise figure of 2 dB (typical) at VCE = −5 V, IC = −200 µA, RG = 2 kΩ, and f = 1 kHz - matching the BC856/857/858 group specification. This makes BC856CMTF suitable for microphone preamplifiers and sensor signal conditioning where SNR is critical.

What is the maximum collector-emitter voltage rating for BC856CMTF?

The BC856CMTF has a maximum collector-emitter voltage (VCEO) rating of −65 V, verified in the Absolute Maximum Ratings table. This allows safe operation in 48 V industrial bus systems and automotive 12 V circuits with transient margin, provided junction temperature remains within 150°C limits.

Is BC856CMTF pin-compatible with other BC856 variants?

Yes, all BC856xMTF variants-including BC856AMTF, BC856BMTF, and BC856CMTF-share identical SOT-23 package dimensions, pinout (1=Base, 2=Emitter, 3=Collector), and thermal characteristics. Only hFE binning differs; no PCB redesign is needed when substituting between A/B/C grades.

What packaging format does BC856CMTF ship in?

BC856CMTF ships in tape-and-reel format per the Ordering Information table, with 3,000 units per reel. The "TF" suffix explicitly denotes tape-and-reel packing, and the device marking "9AC" corresponds to the C-grade hFE bin. This format supports automated SMT placement in high-volume manufacturing.

BC856CMTF Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
65 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Power - Max:
310 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

BC856CMTF FAQ

1.How can I place an order for BC856CMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856CMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856CMTF reliable?

The price and inventory of BC856CMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856CMTF is usually 5 days.

3.What payment methods are accepted for BC856CMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856CMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856CMTF?

BC856CMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856CMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856CMTF?

For technical support, including BC856CMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856CMTF requirements.

6.How does Aetrix verify that BC856CMTF is sourced from the original manufacturer or authorized distributors?

All BC856CMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856CMTF meets industry standards.

7.What is the process for return or replacement of BC856CMTF?

All BC856CMTF units undergo pre-shipment inspection (PSI). If there is an issue with BC856CMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856CMTF part is unused and in its original packaging.

Return procedure for BC856CMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC856CMTF Tags

  • BC856CMTF
  • BC856CMTF PDF
  • BC856CMTF Datasheet
  • BC856CMTF Specifications
  • BC856CMTF Images
  • onsemi
  • onsemi BC856CMTF
  • Buy BC856CMTF
  • BC856CMTF Price
  • BC856CMTF Distributor
  • BC856CMTF Supplier
  • BC856CMTF Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER