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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

NXP Semiconductors BC856T,115

Name: BC856T,115
Brand: NXP Semiconductors
SKU: BC856T,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC856T,115

Manufacturer:: NXP Semiconductors

Category:: Single Bipolar Transistors

Package:: SC-75, SOT-416

Datasheet:: BC856T,115.pdf

Description:: TRANS PNP 65V 0.1A SC-75

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC856T,115 from Nexperia is a PNP general purpose transistor in SC-75 (SOT416) package, rated for −65 V V_CEO, −100 mA I_C, and 150 mW P_tot, used for low-power switching and amplification in portable battery-powered equipment.

For engineers reviewing the BC856T,115 datasheet, BC856T,115 pinout, BC856T,115 application, or BC856T,115 equivalent, this page delivers verified electrical parameters, thermal resistance (833 K/W), DC current gain range (125–250 at I_C = −2 mA), saturation voltage (−200 mV typical), and exact SC-75 terminal mapping.

Technical Context

This PNP bipolar junction transistor operates with emitter-base forward bias and collector-base reverse bias, supporting linear amplification and saturated switching modes. Its h_FE variation across temperature (−55 °C to +150 °C) and current (10 μA to 100 mA) is documented in graphical data, enabling robust bias design in wide-temperature environments.

Thermal performance is defined for FR4 PCB mounting (R_{th j-a} = 833 K/W), and key capacitances-C_c = 2.5 pF and C_e = 10 pF-are specified at 1 MHz, supporting RF-critical low-frequency amplifier and oscillator stage selection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−65 V - maximum safe collector-emitter voltage under open-base conditions; defines upper rail limit in PNP switch designs.
I_C	−100 mA - continuous DC collector current rating; sets load drive capability in logic-level interface or LED driver stages.
P_tot	150 mW - total power dissipation at T_amb ≤ 25 °C on FR4; constrains thermal layout for handheld device PCBs.
h_FE	125–250 - DC current gain at V_CE = −5 V, I_C = −2 mA; determines base resistor sizing for predictable turn-on in switching circuits.
V_CEsat	−200 mV (typ.) - collector-emitter saturation voltage at I_C = −10 mA / I_B = −0.5 mA; ensures low conduction loss in active-low control paths.
f_T	100 MHz - transition frequency at I_C = −10 mA, V_CE = −5 V; supports stable operation up to low-MHz signal amplification.

Pinout & Package

BC856T,115 is housed in a plastic surface-mounted SC-75 (SOT416) package measuring 1.75 × 1.45 × 0.9 mm (L × W × H), with gull-wing leads optimized for high-density portable PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires current-limited drive (I_B ≤ −5 mA peak) to ensure reliable saturation without overdrive.
2	Emitter	Common reference terminal for PNP configuration; connected to higher potential rail (e.g., V_CC) in high-side switch applications.
3	Collector	Output current path; sinks load current when base is driven low relative to emitter; polarity-sensitive for correct biasing.

Key Features

Feature	Design Value
Low-voltage PNP operation	Rated for −65 V V_CEO and −80 V V_CBO, enabling use in 24 V and lower automotive and industrial supply rails.
High-current-gain variants	h_FE binning (125–250) allows precise gain matching in analog amplifier pairs or feedback networks.
Low saturation voltage	V_CEsat ≤ −400 mV at I_C = −100 mA ensures minimal voltage drop and heat generation in power-switching roles.
Small-outline packaging	SOT416 footprint (1.75 × 1.45 mm) supports miniaturized designs in wearables, hearing aids, and compact IoT sensors.

Applications

Portable Audio Amplifiers	Low-Voltage Logic Level Shifting
Use Scenario: Amplifying microphone or line-level signals in battery-powered headphones and Bluetooth earbuds. IC Role / Device Role / Timing Role: Small-signal PNP amplifier stage providing voltage gain and impedance buffering. Use Value: Low noise figure (≤10 dB at 1 kHz) and stable h_FE across −55 °C to +150 °C ensure consistent audio fidelity in varying ambient conditions.	Use Scenario: Translating 3.3 V microcontroller outputs to interface with 5 V legacy peripherals. IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-emitter inversion topology. Use Value: Guaranteed V_BE of −580 to −700 mV at I_C = −2 mA enables predictable threshold setting without external bias resistors.
High-Side Load Switches	Current Mirror Reference Cells
Use Scenario: Controlling LED backlight or sensor bias current in medical diagnostic handhelds. IC Role / Device Role / Timing Role: Saturated PNP switch placed between supply rail and load (emitter-to-rail, collector-to-load). Use Value: −200 mV V_CEsat minimizes voltage headroom loss, preserving battery runtime in 3 V systems.	Use Scenario: Building matched current sources in precision analog front-ends for gas or temperature sensors. IC Role / Device Role / Timing Role: One transistor in a two-device mirror pair, leveraging tight h_FE binning (BC856AT) for ratio accuracy. Use Value: h_FE tolerance of ±20% (125–250) and low ICBO (≤−15 nA) reduce mirror error and drift over temperature.

Portable Audio Amplifiers

Low-Voltage Logic Level Shifting

Use Scenario: Amplifying microphone or line-level signals in battery-powered headphones and Bluetooth earbuds.

IC Role / Device Role / Timing Role: Small-signal PNP amplifier stage providing voltage gain and impedance buffering.

Use Value: Low noise figure (≤10 dB at 1 kHz) and stable h_FE across −55 °C to +150 °C ensure consistent audio fidelity in varying ambient conditions.

Use Scenario: Translating 3.3 V microcontroller outputs to interface with 5 V legacy peripherals.

IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower or common-emitter inversion topology.

Use Value: Guaranteed V_BE of −580 to −700 mV at I_C = −2 mA enables predictable threshold setting without external bias resistors.

High-Side Load Switches

Current Mirror Reference Cells

Use Scenario: Controlling LED backlight or sensor bias current in medical diagnostic handhelds.

IC Role / Device Role / Timing Role: Saturated PNP switch placed between supply rail and load (emitter-to-rail, collector-to-load).

Use Value: −200 mV V_CEsat minimizes voltage headroom loss, preserving battery runtime in 3 V systems.

Use Scenario: Building matched current sources in precision analog front-ends for gas or temperature sensors.

IC Role / Device Role / Timing Role: One transistor in a two-device mirror pair, leveraging tight h_FE binning (BC856AT) for ratio accuracy.

Use Value: h_FE tolerance of ±20% (125–250) and low ICBO (≤−15 nA) reduce mirror error and drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC856B,115	Higher h_FE range (220–475) at same V_CEO/I_C; otherwise identical SC-75 package and pinout.	Better suited for low-base-drive amplification where gain stability >220 is required.	Select BC856B,115 when higher current gain reduces base drive burden without changing layout.
MMBT3906LT1G	Same PNP function but SOT-23 package (larger footprint); V_CEO = −40 V, h_FE = 100–300, R_{th j-a} = 357 K/W.	Lower thermal resistance supports higher continuous power, but larger size limits ultra-compact designs.	Choose MMBT3906LT1G only if board space permits SOT-23 and thermal margin exceeds 150 mW.

Compared with BC856B,115 and MMBT3906LT1G, BC856T,115 offers the optimal balance of compact SC-75 size, −65 V breakdown, and mid-range h_FE for cost-sensitive, space-constrained portable switching-without requiring PCB rework or derating for voltage.

Availability

BC856T,115 is available at Aetrix Electronics and suitable for portable audio amplifiers, low-voltage logic level shifting, and high-side load switches requiring stable component supply across consumer electronics and medical wearable production programs.

Supply support for BC856T,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BC856T,115 belongs to Nexperia's BC856/BC857T series of general-purpose PNP transistors, engineered for reliability and consistency in battery-powered portable equipment where small size and low power loss are critical.

FAQ

What is the maximum collector-emitter voltage rating for BC856T,115?

The BC856T,115 has a maximum collector-emitter voltage (V_CEO) rating of −65 V under open-base conditions. This value is confirmed in the Absolute Maximum Ratings table of the official Nexperia datasheet and applies specifically to the BC856AT/BC856BT variants within the BC856T series. Exceeding this voltage risks permanent junction breakdown.

Does BC856T,115 have a defined DC current gain range?

Yes, BC856T,115 (specifically the BC856AT variant) exhibits a DC current gain (h_FE) range of 125 to 250 when measured at V_CE = −5 V and I_C = −2 mA. This gain binning is explicitly documented in the Characteristics table and distinguishes it from BC856BT (220–475) and BC857CT (420–800) variants in the same family.

What package type is used for BC856T,115 and what are its dimensions?

BC856T,115 uses the SC-75 (SOT416) surface-mount plastic package, with nominal dimensions of 1.75 mm length, 1.45 mm width, and 0.9 mm height. The package features three gull-wing leads and is optimized for high-density PCB assembly in space-constrained portable devices, as detailed in the Package Outline drawing of the Nexperia datasheet.

Can BC856T,115 be used in high-frequency amplifier circuits?

BC856T,115 has a transition frequency (f_T) of 100 MHz at I_C = −10 mA and V_CE = −5 V, making it suitable for low-MHz signal amplification such as audio preamplifier stages or local oscillator buffers-but not for RF power amplification above 50 MHz. Its 2.5 pF collector capacitance further confirms suitability for sub-10 MHz analog signal paths.

What is the thermal resistance from junction to ambient for BC856T,115?

The thermal resistance from junction to ambient (R_{th j-a}) for BC856T,115 is 833 K/W when mounted on a standard FR4 printed-circuit board, as specified in the Thermal Characteristics section. This value assumes natural convection cooling and directly impacts maximum allowable power dissipation at elevated ambient temperatures.

BC856T,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 65 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 125 @ 2mA, 5V

Power - Max:: 150 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75

BC856T,115 FAQ

1.How can I place an order for BC856T,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC856T,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC856T,115 reliable?

The price and inventory of BC856T,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC856T,115 is usually 5 days.

3.What payment methods are accepted for BC856T,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC856T,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC856T,115?

BC856T,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC856T,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC856T,115?

For technical support, including BC856T,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC856T,115 requirements.

6.How does Aetrix verify that BC856T,115 is sourced from the original manufacturer or authorized distributors?

All BC856T,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC856T,115 meets industry standards.

7.What is the process for return or replacement of BC856T,115?

All BC856T,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC856T,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC856T,115 part is unused and in its original packaging.

Return procedure for BC856T,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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