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Diodes Incorporated BC857BLP-7B

Part No.:
BC857BLP-7B
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
3-UFDFN
Datasheet:
AetrixBC857BLP-7B.pdf
Description:
TRANS PNP 45V 0.1A X1-DFN1006-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:514,387

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Product details

Overview

BC857BLP-7B from Diodes Incorporated is a 45V PNP small-signal transistor in X1-DFN1006-3 package, rated for −100mA collector current, −45V VCEO, and 1000mW power dissipation under optimized thermal conditions. It delivers hFE = 220–475 at −2mA/−5V and VCE(sat) ≤ −300mV at −100mA/−5mA drive, supporting high-density biasing and switching in portable power management circuits.

For engineers reviewing the BC857BLP-7B datasheet, BC857BLP-7B pinout, BC857BLP-7B application, or BC857BLP-7B equivalent, key selection criteria include its ultra-small 0.60mm² footprint, −45V breakdown rating, JEDEC-qualified reliability, complementary pairing with BC847BLP, and thermal performance on 2oz copper heatsinking.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with verified DC current gain (hFE) spanning 220–475 across −2mA to −10mA collector currents at VCE = −5V. Its fT = 100MHz enables use in low-noise amplification and moderate-speed switching up to ~10MHz.

Thermal design is defined by two RθJA values: 310°C/W on minimal 1oz FR4 and 120°C/W when the exposed collector pad is soldered to a 25mm × 25mm 2oz copper area-confirming its dependency on board-level thermal management for full 1000mW capability.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45V: Maximum safe collector-emitter voltage before avalanche conduction in common-emitter configuration.
IC −100mA continuous: Sustained collector current handling without degradation under specified thermal conditions.
hFE 220–475 @ VCE = −5V, IC = −2mA: Confirmed DC current gain range for stable bias network design.
VCE(sat) ≤ −300mV @ IC = −100mA, IB = −5mA: Low saturation voltage enabling efficient switching in low-voltage logic interfaces.
fT 100MHz @ VCE = −5V, IC = −10mA: Gain-bandwidth product confirming suitability for RF preamp and oscillator buffer stages.
RθJA 120°C/W with 25mm × 25mm 2oz copper: Thermal resistance defining maximum power derating in production PCB layouts.
ESD HBM 4000V: Human-body-model ESD robustness enabling direct handling in non-ESD-controlled assembly environments.

Pinout & Package

Package: X1-DFN1006-3 - 0.60mm² footprint, 0.5mm height, molded green plastic (UL 94V-0), NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main current sink terminal Exposed metal pad on bottom surface; must be soldered to thermal plane for rated 1000mW operation.
Emitter (E) Current source terminal Connected internally to substrate; forms emitter-base junction with base terminal for forward-active operation.
Base (B) Control input terminal Receives forward-biased current to modulate collector-emitter conduction; marked by bar on top view.

Key Features

Feature Design Value
Ultra-compact footprint 0.60mm² area - 13× smaller than SOT23, enabling dense routing in space-constrained wearables and IoT sensors.
High thermal efficiency RθJL = 120°C/W to lead - allows >80% of rated power dissipation when collector pad is fully thermally coupled.
Complementary NPN pairing BC847BLP - identical X1-DFN1006-3 package and matching gain/breakdown specs for push-pull and differential pair designs.
Automotive-qualified variant path AEC-Q101-compliant Q-suffix versions available - supports functional safety planning for body electronics and ADAS subsystems.
Green material compliance Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets IPC-1752A reporting and EU EcoDesign requirements.

Applications

LED Driver Biasing Low-Voltage Logic Level Shifting

Use Scenario: Driving 20mA indicator LEDs from 3.3V microcontroller GPIO pins with inverted logic control.

IC Role / Device Role / Timing Role: PNP switch operating in saturation mode to sink current from LED anode to ground.

Use Value: VCE(sat) ≤ −300mV ensures ≥3.0V forward drop across LED at full current, preserving brightness and efficiency.

Use Scenario: Translating 1.8V CMOS output signals to 5V-tolerant inputs in mixed-voltage MCU peripherals.

IC Role / Device Role / Timing Role: Active-low level shifter using emitter-follower configuration with base tied to 5V rail.

Use Value: hFE ≥ 220 guarantees sufficient drive strength for capacitive loads up to 20pF with <10ns propagation delay.

Portable Power Sequencing Current Mirror Reference

Use Scenario: Enabling/disabling LDO outputs in battery-powered medical sensors based on system wake/sleep state.

IC Role / Device Role / Timing Role: High-side enable switch controlling LDO EN pin via open-collector interface.

Use Value: −45V VCEO margin prevents breakdown during 3.6V Li-ion battery transients and load-dump events.

Use Scenario: Building matched current sources for precision analog front-ends in handheld test equipment.

IC Role / Device Role / Timing Role: Reference leg of Wilson current mirror with matched BC847BLP device.

Use Value: Tight hFE spread (220–475) and low VBE(on) variation (−600 to −750mV) ensure <2% current mismatch at 100µA–1mA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC857B,115 (Nexperia) SOT323 package (2.1mm²), RθJA = 290°C/W, hFE = 200–450, VCEO = −45V Larger footprint limits use in ultra-thin devices; lower thermal efficiency reduces max continuous IC to −100mA only with forced airflow Select when legacy SMT placement equipment lacks DFN1006 capability or when higher mechanical robustness is required.
MMBT3906LT1G (onsemi) SOT23 package (2.8mm²), RθJA = 300°C/W, hFE = 100–300, VCEO = −40V Lower VCEO and narrower hFE range reduce margin in 3.3V/5V rail-switching and precision bias networks Choose for cost-sensitive industrial controls where −40V rating suffices and thermal constraints are relaxed.

Compared with BC857B,115 and MMBT3906LT1G, BC857BLP-7B provides superior board-area efficiency, higher thermal conductivity via exposed collector pad, and broader DC gain consistency-making it optimal for miniaturized, thermally constrained, and precision-biased designs.

Availability

BC857BLP-7B is available at Aetrix Electronics and suitable for LED driver biasing, low-voltage logic level shifting, and portable power sequencing requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for BC857BLP-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The BC857BLP belongs to Diodes' X1-DFN series of ultra-miniature transistors, engineered specifically for space-constrained consumer, computing, and automotive electronics where thermal density and board real estate are critical constraints.

FAQ

What is the maximum continuous collector current for BC857BLP-7B under standard PCB conditions?

The BC857BLP-7B supports −100mA continuous collector current when mounted on a minimum recommended 1oz copper pad layout per datasheet Note 5. Full 1000mW dissipation requires the exposed collector pad soldered to a 25mm × 25mm 2oz copper area, reducing RθJA to 120°C/W and enabling sustained −100mA operation at +25°C ambient.

Is BC857BLP-7B suitable for automotive applications?

BC857BLP-7B itself is not AEC-Q101 qualified, but Diodes offers automotive-grade variants with Q-suffix (e.g., BC857BLPQ-7B) manufactured in IATF 16949-certified facilities and tested to AEC-Q101 stress requirements. These Q-parts support PPAP documentation and change control for body electronics and infotainment systems.

How does the X1-DFN1006-3 package affect reflow soldering process design?

The X1-DFN1006-3's 0.5mm height and single-row 3-terminal layout require precise stencil aperture design (0.15mm thickness, 0.12mm × 0.45mm openings) and peak reflow temperature of 260°C for 10–15 seconds. The exposed collector pad demands full thermal land coverage and controlled solder paste volume to prevent voiding and ensure mechanical reliability.

Can BC857BLP-7B replace BC857C in existing designs?

No-BC857BLP-7B has hFE = 220–475, while BC857C specifies hFE = 420–800. Substituting may cause overdrive in high-gain amplifier stages or insufficient drive in saturated switch applications. Use BC857CLP-7B (hFE = 420–800) for direct replacement, maintaining identical X1-DFN1006-3 package and electrical ratings.

BC857BLP-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Power - Max:
250 mW
Frequency - Transition:
100MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1006-3

BC857BLP-7B FAQ

1.How can I place an order for BC857BLP-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857BLP-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857BLP-7B reliable?

The price and inventory of BC857BLP-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857BLP-7B is usually 5 days.

3.What payment methods are accepted for BC857BLP-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857BLP-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857BLP-7B?

BC857BLP-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857BLP-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857BLP-7B?

For technical support, including BC857BLP-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857BLP-7B requirements.

6.How does Aetrix verify that BC857BLP-7B is sourced from the original manufacturer or authorized distributors?

All BC857BLP-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857BLP-7B meets industry standards.

7.What is the process for return or replacement of BC857BLP-7B?

All BC857BLP-7B units undergo pre-shipment inspection (PSI). If there is an issue with BC857BLP-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857BLP-7B part is unused and in its original packaging.

Return procedure for BC857BLP-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC857BLP-7B Tags

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