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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC857BQCZ

Name: BC857BQCZ
Brand: Nexperia USA Inc.
SKU: BC857BQCZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC857BQCZ

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-XDFN Exposed Pad

Datasheet:: BC857BQCZ.pdf

Description:: TRANS PNP 45V 0.1A DFN1412D-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC857BQCZ from Nexperia is a PNP general-purpose transistor in a leadless DFN1412D-3 (SOT8009) package, rated for −45 V V_CEO, −100 mA I_C, and offering h_FE = 220–475 at V_CE = −5 V and I_C = −2 mA. It serves as a compact, surface-mount switching or amplification device in space-constrained consumer and industrial PCBs.

For engineers reviewing the BC857BQCZ datasheet, BC857BQCZ pinout, BC857BQCZ application, or BC857BQCZ equivalent, this page delivers verified package dimensions, thermal derating curves, saturation voltage behavior across temperature, side-wettable flank solder joint inspection support, and direct alternatives with validated h_FE and V_CEsat trade-offs.

Technical Context

This transistor operates as a discrete PNP bipolar junction device optimized for low-voltage, medium-current switching and linear amplification. Its DFN1412D-3 package features side-wettable flanks to enable automated optical inspection (AOI) of solder joints - a critical requirement for high-reliability SMT assembly lines.

It exhibits a maximum junction temperature of 150 °C, thermal resistance R_th(j-a) of 278 K/W on 70 µm FR4 copper, and supports pulsed peak collector current up to −200 mA (t_p ≤ 1 ms). The base-emitter saturation voltage remains below −850 mV at I_C = −100 mA / I_B = −5 mA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum safe collector-emitter voltage with open base; defines off-state blocking capability in switching circuits.
I_C	−100 mA - Continuous DC collector current rating; sets upper limit for steady-state load drive or amplification current.
h_FE	220–475 - DC current gain at V_CE = −5 V, I_C = −2 mA; determines required base drive for target collector current.
V_CEsat	≤ −650 mV - Collector-emitter saturation voltage at I_C = −100 mA, I_B = −5 mA; directly impacts conduction loss and heat generation in switch mode.
P_tot	450 mW - Total power dissipation on 70 µm FR4 PCB; constrains usable power-handling in thermally unenhanced layouts.
R_th(j-a)	278 K/W - Junction-to-ambient thermal resistance on standard FR4; used to calculate temperature rise under given power load.
Package	DFN1412D-3 (SOT8009) - 1.4 mm × 1.2 mm × 0.48 mm ultra-small leadless package with side-wettable flanks for AOI-compatible reflow.

Pinout & Package

DFN1412D-3 (SOT8009) is a 3-terminal, leadless plastic package with side-wettable flanks, measuring 1.4 mm × 1.2 mm × 0.48 mm and featuring a 0.8 mm pitch. Its low 0.5 mm profile enables use in ultra-thin portable electronics.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal; forward-biased to turn on the PNP transistor; requires negative current relative to emitter for activation.
2	Emitter (E)	Current source terminal in PNP configuration; typically connected to higher potential (e.g., V_CC) in common-emitter switches.
3	Collector (C)	Current sink terminal; delivers load current to ground or lower-potential node when transistor is saturated.

Key Features

Feature	Design Value
Side-wettable flanks	Enables automated optical inspection (AOI) of solder joints without X-ray, improving manufacturing yield and traceability.
Ultra-small footprint	1.4 mm × 1.2 mm body area - reduces PCB real estate by >50% vs. conventional SOT23, critical for wearables and miniaturized modules.
Low package height	0.48 mm max - supports stacking, thin-profile enclosures, and mechanical clearance-sensitive designs like foldable displays.
High h_FE range	220–475 - allows reduced base drive current and smaller bias resistors, lowering power consumption in battery-powered logic interfaces.
Thermal robustness	150 °C max junction temperature and 278 K/W R_th(j-a) - supports operation in ambient temperatures up to +125 °C with appropriate layout.

Applications

LED Driver Circuit

Level-Shifting Interface

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins in handheld medical devices.

IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to V_CC; active-low logic interface with fast turn-on/turn-off.

Use Value: Low V_CEsat (≤ −650 mV) minimizes voltage drop and ensures ≥2.65 V across LED; compact DFN package saves space on dense diagnostic PCBs.

Use Scenario: Translating 1.8 V logic outputs to 5 V rail-synchronized signals in mixed-voltage sensor hubs.

IC Role / Device Role / Timing Role: Single-transistor level shifter with emitter-follower configuration; provides bidirectional DC coupling without timing skew.

Use Value: High h_FE ensures reliable switching at low base current; side-wettable flanks guarantee solder joint integrity in high-volume automated assembly.

Power Rail Switch

Audio Signal Amplifier

Use Scenario: Enabling/disabling 3.3 V subsystem power in IoT edge nodes using MCU-controlled enable line.

IC Role / Device Role / Timing Role: High-side PNP switch placed between V_IN and load; driven by inverted MCU output via base resistor.

Use Value: −45 V V_CEO provides margin against supply transients; 450 mW P_tot supports continuous 100 mA load without heatsinking.

Use Scenario: Low-noise preamplification stage for electret microphone signals in voice-controlled home assistants.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased for Class-A operation; configured for 20–20 kHz small-signal gain.

Use Value: NF = 10 dB at 1 kHz enables clean signal capture; stable h_FE over −55 °C to +150 °C ensures consistent gain across operating environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857B,215 (SOT23)	Same h_FE range (220–475), but larger SOT23 package (3.0 mm × 1.4 mm); no side-wettable flanks.	Lacks AOI support; unsuitable for high-density, AOI-mandated production; better suited for prototyping or low-volume manual rework.	Select when board-level rework accessibility or legacy footprint compatibility outweighs miniaturization and AOI needs.
MMBT3906LT1G (SOT23)	Lower h_FE (100–300), higher V_CEsat (≤ −700 mV @ −100 mA), same −40 V V_CEO.	Marginally higher conduction loss; less suitable for low-base-drive or battery-critical designs where BC857BQCZ's gain advantage matters.	Choose only if cost sensitivity dominates and existing SOT23 footprint reuse is mandatory; verify gain-driven base resistor recalculations.

Compared with BC857B,215 and MMBT3906LT1G, BC857BQCZ delivers superior manufacturability via AOI-ready side-wettable flanks, 40% smaller footprint, and higher guaranteed h_FE - making it optimal for volume production of space-constrained, thermally managed consumer and industrial PCBs.

Availability

BC857BQCZ is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, power rail switches, and audio signal amplifiers requiring stable component supply, tight thermal management, and AOI-compliant assembly.

Supply support for BC857BQCZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including logic, discretes, MOSFETs, and ESD protection - serving automotive, industrial, mobile, and computing markets.

The BC857xQC series belongs to Nexperia's general-purpose transistor product line, engineered specifically for miniaturized, AOI-compatible SMT applications where footprint reduction, thermal efficiency, and process robustness are design priorities.

FAQ

What is the maximum allowable junction temperature for BC857BQCZ?

The absolute maximum junction temperature (T_j) for BC857BQCZ is 150 °C, as defined in the Absolute Maximum Ratings table. Operation above this temperature risks permanent degradation of h_FE, increased leakage, and accelerated failure. Derating must be applied per Figure 1's power curves when ambient exceeds 25 °C.

Does BC857BQCZ support automatic optical inspection (AOI) of solder joints?

Yes - BC857BQCZ uses the DFN1412D-3 (SOT8009) package with side-wettable flanks, explicitly designed to allow AOI systems to inspect solder fillet quality without requiring X-ray. This feature is confirmed in Section 2 (Features and benefits) and Section 12 (Soldering) of the official datasheet.

How does the h_FE of BC857BQCZ vary with temperature and collector current?

Per Figure 8, h_FE peaks near I_C = −10 mA and decreases at both lower and higher currents. At T_amb = 25 °C, h_FE remains within 220–475 across I_C = −1 mA to −100 mA. It drops ~25% at −55 °C and rises ~15% at +150 °C for a given I_C, as shown in the family of curves.

Can BC857BQCZ replace BC857B in an existing SOT23 design?

No - BC857BQCZ uses DFN1412D-3 (SOT8009), which is not pin-compatible or footprint-compatible with SOT23. The pad layout, pitch (0.8 mm vs. 1.9 mm), and soldering method differ fundamentally. A PCB redesign and stencil update are required to migrate from BC857B to BC857BQCZ.

BC857BQCZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: BC857xQC

Package/Case:: 3-XDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 850mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 2mA, 5V

Power - Max:: 360 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: DFN1412D-3

BC857BQCZ FAQ

1.How can I place an order for BC857BQCZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857BQCZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857BQCZ reliable?

The price and inventory of BC857BQCZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857BQCZ is usually 5 days.

3.What payment methods are accepted for BC857BQCZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857BQCZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857BQCZ?

BC857BQCZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857BQCZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857BQCZ?

For technical support, including BC857BQCZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857BQCZ requirements.

6.How does Aetrix verify that BC857BQCZ is sourced from the original manufacturer or authorized distributors?

All BC857BQCZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857BQCZ meets industry standards.

7.What is the process for return or replacement of BC857BQCZ?

All BC857BQCZ units undergo pre-shipment inspection (PSI). If there is an issue with BC857BQCZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857BQCZ part is unused and in its original packaging.

Return procedure for BC857BQCZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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