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Infineon Technologies BC857BWE6327
- Part No.:
- BC857BWE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC857BWE6327.pdf
- Description:
- TRANS PNP 45V 0.1A PG-SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:333,000
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Product details
Overview
BC857BWE6327 from Infineon Technologies is a PNP silicon small-signal transistor optimized for audio-frequency input stages and driver applications. It delivers DC current gain (hFE) of 220–475 at IC = 2 mA, VCE = 5 V; VCEO = 45 V; VCE(sat) ≤ 250 mV at IC = 10 mA, IB = 0.5 mA; fT = 250 MHz; and low noise (F = 1–4 dB) in the 30 Hz–15 kHz band - enabling high-fidelity preamplifier and level-shifting use.
For engineers reviewing the BC857BWE6327 datasheet, BC857BWE6327 pinout, BC857BWE6327 application, or BC857BWE6327 equivalent, key selection criteria include its SOT323 package thermal resistance (RthJS ≤ 105 K/W), AEC-Q101 qualification status, complementary NPN pairing with BC847B, and verified performance under pulsed load conditions up to 200 mA.
Technical Context
This transistor operates as a linear amplifying device in Class-A or Class-AB bias configurations, supporting stable DC biasing via base-current control. Its hFE grouping (B-grade) ensures predictable current amplification across production lots, while low VCE(sat) enables efficient switching in low-voltage logic interface circuits.
The device's fT of 250 MHz and Ccb = 1.5 pF support bandwidth-limited AF signal handling without parasitic oscillation. Its RthJS ≤ 105 K/W and Ptot = 250 mW at TS ≤ 124 °C define thermal derating boundaries for PCB layout in compact consumer audio modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - supports rail-to-rail operation in 3.3 V/5 V/12 V analog signal chains without breakdown risk |
| hFE (IC = 2 mA) | 220–475 - enables precise current mirror matching and stable gain in discrete op-amp input stages |
| VCE(sat) | ≤ 250 mV @ IC = 10 mA - minimizes power loss and voltage drop in active-load switching applications |
| fT | 250 MHz - ensures adequate gain margin for feedback-stable audio preamp designs up to 20 kHz |
| Noise Figure | 1–4 dB @ 1 kHz - meets SNR requirements for microphone preamplifiers and line-level receivers |
| RthJS | ≤ 105 K/W - allows direct thermal coupling to copper pour on 1-layer FR-4 boards without heatsinking |
Pinout & Package
BC857BWE6327 is housed in a RoHS-compliant SOT323 (SC-70) plastic surface-mount package measuring 2.13 mm × 1.3 mm × 0.9 mm, with gull-wing leads and standardized tape-and-reel packaging (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Connected to higher-potential rail in common-base configuration; defines reference for VBE biasing |
| 2 (Base) | Control input | Receives current-limited drive (typically 1–10 µA) to modulate collector current with hFE-dependent gain |
| 3 (Collector) | Current source output | Delivers amplified current to load; polarity inverted relative to base signal in common-emitter mode |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress-test protocol including HTSL, TC, HTRB - suitable for infotainment front-end stages |
| Low VCE(sat) | 250 mV max at IC/IB = 10 - reduces conduction loss in battery-powered sensor interface drivers |
| High hFE consistency | B-grade binning (220–475) - eliminates need for external gain-trimming resistors in production audio filters |
| Low-noise AF performance | F = 1–4 dB over 30 Hz–15 kHz - preserves dynamic range in electret microphone bias networks |
Applications
| Audio Preamp Stage | Level-Shifting Interface |
|---|---|
Use Scenario: Amplifying weak signals from electret condenser microphones before ADC sampling in portable voice recorders. IC Role / Device Role / Timing Role: Discrete PNP transistor configured in common-emitter topology to provide 20–40 dB voltage gain with minimal added noise. Use Value: Achieves ≥65 dB SNR at 1 kHz due to 1–4 dB noise figure and 250 mV VCE(sat), avoiding clipping in 3.3 V supply rails. | Use Scenario: Translating 5 V logic outputs to 3.3 V-compatible inputs in mixed-voltage MCU peripherals. IC Role / Device Role / Timing Role: Active pull-down switch in open-collector interface, sinking current when driven low by upstream controller. Use Value: Delivers <100 ns turn-off delay and <250 mV saturation voltage, ensuring clean signal edges without shoot-through risk. |
| Automotive Sensor Bias | Discrete Current Mirror |
Use Scenario: Providing stable bias current to Hall-effect position sensors in engine control units operating at −40 °C to +125 °C ambient. IC Role / Device Role / Timing Role: Constant-current source using emitter-degeneration resistor, leveraging AEC-Q101 qualification and 150 °C Tj rating. Use Value: Maintains ±5% IC stability across temperature due to matched hFE and low VBE(ON) drift (600–820 mV). | Use Scenario: Matching reference and output currents in analog front-ends for industrial current-loop transmitters (4–20 mA). IC Role / Device Role / Timing Role: Paired PNP transistor in Wilson or Widlar mirror topology, sharing identical process and thermal environment. Use Value: Enables <0.5% current ratio error at IC = 1 mA due to B-grade hFE binning and SOT323 package symmetry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BW,115 (Nexperia) | Same SOT323 package, identical hFE range (220–475), but not AEC-Q101 qualified | Lacks automotive stress-test validation; limited to commercial-grade consumer audio | Select when cost sensitivity outweighs automotive reliability requirements |
| MMBT857LT1G (onsemi) | SOT23 package (larger RthJA), same VCEO/hFE, RoHS-compliant but no AEC-Q101 documentation | Higher thermal resistance (240 K/W) requires larger copper area; unsuitable for space-constrained automotive modules | Choose only if legacy SOT23 footprint compatibility is mandatory |
Compared with BC857BW,115 and MMBT857LT1G, BC857BWE6327 uniquely combines AEC-Q101 qualification, SOT323 thermal efficiency (RthJS ≤ 105 K/W), and verified low-noise AF performance - making it the sole option for thermally constrained, safety-aware automotive signal conditioning.
Availability
BC857BWE6327 is available at Aetrix Electronics and suitable for automotive infotainment systems, portable audio recorders, industrial 4–20 mA transmitters, and battery-powered sensor interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BC857BWE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification aligned to ISO/TS 16949.
The BC857 series belongs to Infineon's high-reliability discrete transistor product line, engineered specifically for automotive and industrial signal conditioning where low noise, thermal robustness, and AEC-Q101 compliance are mandatory.
FAQ
Is BC857BWE6327 pin-compatible with BC847B?
No - BC857BWE6327 is a PNP transistor with E-B-C pinout (1=Emitter, 2=Base, 3=Collector), while BC847B is an NPN device with C-B-E pinout (1=Collector, 2=Base, 3=Emitter). Swapping them without circuit redesign causes polarity inversion and functional failure.
What is the maximum continuous collector current at 100 °C ambient?
At TA = 100 °C, derating applies: Ptot = 250 mW at TS ≤ 124 °C, and RthJS ≤ 105 K/W. Using TJ(max) = 150 °C, maximum allowable IC is ~65 mA (calculated via VCE(sat) × IC ≤ Ptot – junction-to-sink thermal budget).
Does BC857BWE6327 support pulsed operation beyond 100 mA?
Yes - peak collector current ICM = 200 mA is rated for pulse widths ≤ 10 ms (duty cycle ≤ 2%). The datasheet confirms permissible pulse load curves showing Ptot(max)/Ptot(DC) = 2.5 at tp = 1 ms, enabling short-duration surge handling in motor driver enable circuits.
Can BC857BWE6327 replace BC857BL3 in new designs?
No - BC857BL3 uses TSLP-3-1 package (RthJS ≤ 60 K/W) and is not AEC-Q101 qualified, whereas BC857BWE6327 uses SOT323 (RthJS ≤ 105 K/W) and is AEC-Q101 qualified. Footprint, thermal profile, and qualification differ; direct substitution invalidates automotive compliance.
BC857BWE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 220 @ 2mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BC857BWE6327 FAQ
1.How can I place an order for BC857BWE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC857BWE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC857BWE6327 reliable?
The price and inventory of BC857BWE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857BWE6327 is usually 5 days.
3.What payment methods are accepted for BC857BWE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857BWE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC857BWE6327?
BC857BWE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC857BWE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC857BWE6327?
For technical support, including BC857BWE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857BWE6327 requirements.
6.How does Aetrix verify that BC857BWE6327 is sourced from the original manufacturer or authorized distributors?
All BC857BWE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857BWE6327 meets industry standards.
7.What is the process for return or replacement of BC857BWE6327?
All BC857BWE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BC857BWE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC857BWE6327 part is unused and in its original packaging.
Return procedure for BC857BWE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC857BWE6327 Tags
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MMBT3906LT1G
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