Infineon Technologies BC857BWH6327XTSA1
- Part No.:
- BC857BWH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC857BWH6327XTSA1.pdf
- Description:
- TRANS PNP 45V 0.1A PG-SOT323
- Quantity:
- Payment:

- Shipping:

Inventory:4,003
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Product details
Overview
BC857BWH6327XTSA1 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers high DC current gain (hFE = 220–480 at IC = 2 mA), low VCE(sat) (max 300 mV at IC = 10 mA/IB = 0.5 mA), and low noise (1 dB typical at 1 kHz, 0.2 mA). It is qualified to AEC-Q101 and housed in an RoHS-compliant SOT323 package.
For engineers reviewing the BC857BWH6327XTSA1 datasheet, BC857BWH6327XTSA1 pinout, BC857BWH6327XTSA1 application, or BC857BWH6327XTSA1 equivalent, key selection criteria include its PNP polarity, hFE group B specification, VCEO = 45 V rating, thermal resistance (RthJS ≤ 90 K/W for BF variants), and suitability for low-noise AF amplification and switching in space-constrained PCB layouts.
Technical Context
This transistor operates as a general-purpose PNP amplifier/switch with complementary NPN pairing to BC847B. Its hFE grouping (B) ensures consistent gain matching across production lots for differential pair or current mirror use. The SOT323 package enables high-density placement while maintaining thermal performance up to Tj = 150 °C.
Electrical behavior is characterized at 25 °C with defined test conditions: VCE = 5 V for hFE, f = 100 MHz for fT, and VCB = 10 V for Ccb. Noise figure is specified at IC = 0.2 mA, making it suitable for preamplifier front-ends where signal integrity is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum collector-emitter voltage before breakdown; supports rail-to-rail operation in 30 V systems with margin. |
| hFE (IC = 2 mA) | 220–480 - Group B gain range enables predictable biasing in linear amplifiers without trimming. |
| VCE(sat) | ≤300 mV @ IC/IB = 10 mA/0.5 mA - Low saturation voltage reduces power loss in switching applications. |
| fT | 250 MHz typical - Supports stable amplification up to mid-VHF range; sufficient for wideband AF and low-speed digital switching. |
| Ccb | 1.5 pF typical @ VCB = 10 V - Low collector-base capacitance minimizes Miller effect in high-gain configurations. |
| Noise Figure | 1 dB typical @ 1 kHz, 0.2 mA - Enables clean signal amplification in microphone preamps and sensor interfaces. |
| Ptot | 250 mW @ TS ≤ 128 °C - Power dissipation limit defines safe operating area under continuous conduction in SOT323. |
Pinout & Package
BC857BWH6327XTSA1 is supplied in the SOT323 (SC-70) plastic surface-mount package, measuring 2.1 mm × 2.0 mm × 0.9 mm with gull-wing leads. Thermal resistance RthJS is ≤90 K/W for BF variants, enabling reliable operation at junction temperatures up to 150 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current source terminal for PNP operation; connects to higher potential node in common-emitter configuration. |
| 2 (Base) | B | Control input; requires ~0.7 V forward bias relative to emitter to enable conduction. |
| 3 (Collector) | C | Current sink terminal; output node in common-emitter stage; tied to load or next-stage input. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress-test requirements including HTOL, temperature cycling, and ESD. |
| Low VCE(sat) | Max 300 mV at IC/IB = 10 mA/0.5 mA - Reduces heat generation and improves efficiency in active loads. |
| Group B hFE | 220–480 at IC = 2 mA - Tighter gain distribution than generic transistors, simplifying circuit design and yield assurance. |
| Low-noise operation | 1 dB typical NF @ 1 kHz - Enables use in sensitive analog front-ends without added filtering or compensation. |
| RoHS-compliant | Pb-free SOT323 package - Meets global environmental compliance mandates without performance trade-offs. |
Applications
| Audio Preamp Stage | Automotive Door Module Driver |
|---|---|
|
Use Scenario: Amplifying low-level signals from electret microphones or piezoelectric sensors in portable audio devices. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for linearity. Use Value: 1 dB noise figure and 220–480 hFE ensure high SNR and stable gain without external trimming components. |
Use Scenario: Driving LED indicators and small solenoids in vehicle door control units exposed to temperature extremes. IC Role / Device Role / Timing Role: Switching transistor controlling 12 V loads via MCU GPIO with base current limiting. Use Value: AEC-Q101 qualification and 45 V VCEO provide robustness against load-dump transients and extended thermal cycling. |
| Industrial Sensor Interface | Consumer Power Management |
|
Use Scenario: Level-shifting and current buffering between 3.3 V microcontrollers and 5 V analog sensor outputs. IC Role / Device Role / Timing Role: PNP emitter-follower buffer isolating MCU pins from capacitive sensor loads. Use Value: Low VBE(sat) (700–850 mV) and high hFE maintain accurate voltage tracking with minimal base drive current. |
Use Scenario: Enabling/disabling auxiliary power rails in battery-powered IoT hubs during sleep/wake transitions. IC Role / Device Role / Timing Role: High-side switch controlling VDD to peripheral ICs using logic-level base control. Use Value: 250 mW power rating and SOT323 footprint support compact, thermally efficient rail switching without heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BW,115 (Nexperia) | Same SOT323 package, identical VCEO/hFE specs, but not AEC-Q101 qualified. | Lacks automotive stress validation; suitable only for commercial-grade consumer or industrial equipment. | Select when automotive qualification is unnecessary and cost sensitivity outweighs reliability certification. |
| MMBT857LT1G (ON Semiconductor) | SOT23 package (larger footprint), same VCEO = 45 V, hFE = 200–450, RthJS ≈ 240 K/W. | Higher thermal resistance limits continuous power handling; less suitable for high-density layouts. | Choose if SOT23 compatibility is required or existing board layout cannot accommodate SOT323. |
Compared with BC857BW,115 and MMBT857LT1G, BC857BWH6327XTSA1 uniquely combines AEC-Q101 qualification, SOT323 miniaturization, and low-noise performance-making it optimal for space-constrained automotive and high-fidelity audio designs where reliability and signal fidelity are jointly critical.
Availability
BC857BWH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, audio signal conditioning, and industrial sensor interface applications requiring stable component supply and long-term lifecycle support.
Supply support for BC857BWH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications.
This transistor belongs to Infineon's BC856–BC860 family of AEC-Q101-qualified PNP transistors, engineered for reliability in automotive signal conditioning and low-power switching applications.
FAQ
What is the maximum junction temperature for BC857BWH6327XTSA1?
The absolute maximum junction temperature is 150 °C, as specified in the Infineon datasheet. Operation above this threshold risks permanent degradation of hFE and increased leakage. Derating curves show Ptot must be reduced linearly beyond TS = 128 °C to maintain safe Tj.
Is BC857BWH6327XTSA1 pin-compatible with BC847B?
No - BC857BWH6327XTSA1 is a PNP transistor with emitter-base-collector pinout (1-E, 2-B, 3-C) in SOT323, while BC847B is an NPN device with collector-base-emitter order (1-C, 2-B, 3-E) in the same package. Polarity reversal requires schematic and layout changes.
Does this part support pulsed operation beyond its DC power rating?
Yes - the datasheet provides permissible pulse load curves showing Ptot(max)/Ptot(DC) ratios up to 3× for pulse widths ≤100 µs at D = 0.01. This allows brief overloads such as inrush current limiting or transient switching without thermal damage.
How does the "WH" suffix in BC857BWH6327XTSA1 relate to packaging or testing?
The "WH" denotes Infineon's internal tape-and-reel packaging code for SOT323 devices, indicating 3,000-unit reels with moisture-sensitive level 1 (MSL-1) handling. "H6327" is the wafer lot and process identifier; "XTSA1" confirms RoHS-compliant, lead-free finish per JEDEC J-STD-020.
BC857BWH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 220 @ 2mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BC857BWH6327XTSA1 FAQ
1.How can I place an order for BC857BWH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC857BWH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC857BWH6327XTSA1 reliable?
The price and inventory of BC857BWH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857BWH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BC857BWH6327XTSA1?
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4.How is shipping managed for BC857BWH6327XTSA1?
BC857BWH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC857BWH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC857BWH6327XTSA1?
For technical support, including BC857BWH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857BWH6327XTSA1 requirements.
6.How does Aetrix verify that BC857BWH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BC857BWH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857BWH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BC857BWH6327XTSA1?
All BC857BWH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC857BWH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC857BWH6327XTSA1 part is unused and in its original packaging.
Return procedure for BC857BWH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC857BWH6327XTSA1 Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

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MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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