Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BC857C/DG/B3,215

Part No.:
BC857C/DG/B3,215
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC857C/DG/B3,215.pdf
Description:
TRANS PNP 45V 0.1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,626

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC857C/DG/B3,215 from Nexperia is a PNP general-purpose bipolar junction transistor in SOT23 (TO-236AB) package, rated for −45 V VCEO, −100 mA IC, and DC current gain (hFE) of 420–800 at VCE = −5 V and IC = −2 mA. It serves as a low-voltage, low-current switching or amplification device in signal-level analog and digital interface circuits.

For engineers reviewing the BC857C/DG/B3,215 datasheet, BC857C/DG/B3,215 pinout, BC857C/DG/B3,215 application, or BC857C/DG/B3,215 equivalent, this page delivers verified electrical parameters, SOT23 terminal mapping, real-world use cases in level-shifting and load control, and validated alternative transistors with precise functional distinctions.

Technical Context

This transistor operates in active, saturation, and cutoff regions with guaranteed hFE ≥ 420 at low collector current (−2 mA), enabling stable biasing in linear amplifier stages and predictable on/off behavior in digital logic interfaces. Its −5 V VEBO and −50 V VCBO support safe operation in negative-rail signal conditioning paths.

Thermal resistance Rth(j-a) is 500 K/W on FR4 PCB, limiting continuous power dissipation to 250 mW at Tamb ≤ 25 °C. Saturation voltages - VCE(sat) ≤ −650 mV at IC = −100 mA/IB = −5 mA and VBE(sat) ≤ −850 mV under same conditions - define its efficiency in low-loss switching applications.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45 V: Maximum allowable collector-emitter voltage with base open; defines safe operating range in negative-supply circuits.
IC −100 mA: Continuous DC collector current rating; sets upper limit for load-driving capability in switching designs.
hFE 420–800 at VCE = −5 V, IC = −2 mA: High and tightly binned DC current gain enables precise bias network design with minimal component count.
VCE(sat) ≤ −650 mV at IC = −100 mA, IB = −5 mA: Low saturation voltage minimizes power loss and heating during switch-on state.
VEBO −5 V: Emitter-base breakdown voltage; ensures robustness against reverse-bias stress in level-shifter or pull-up configurations.
fT 100 MHz at VCE = −5 V, IC = −10 mA: Transition frequency supports RF-coupled preamplifier and high-speed switching up to ~10 MHz.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; compact 2.9 mm × 1.3 mm footprint, 1.1 mm height, and standard reflow-compatible pad layout per Fig. 15.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input node; requires current-limited drive (IB ≤ −5 mA typical for full saturation) to enable conduction between emitter and collector.
2 Emitter (E) Common reference terminal in common-emitter configuration; connected to most-positive rail in PNP switching applications.
3 Collector (C) Output node; sinks current from load to emitter when biased on; polarity must respect PNP convention (VE > VC).

Key Features

Feature Design Value
High hFE binning 420–800 range ensures consistent gain across production lots, reducing need for trim resistors in amplifier feedback networks.
Low VCE(sat) ≤ −650 mV at rated current enables <100 mW dissipation in saturated switch mode, supporting thermally constrained PCB layouts.
SOT23 compatibility Standard JEDEC TO-236AB footprint allows drop-in replacement in existing designs and automated placement on high-density boards.
−50 V VCBO Supports operation in −45 V rail systems with 5 V margin, preventing avalanche breakdown during transient overvoltage events.

Applications

Logic-Level Signal Inversion Low-Side Load Switching

Use Scenario: Converting TTL/CMOS high-to-low signals into inverted outputs for driving complementary inputs or enable lines.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter topology, where base drive controls emitter-to-collector current flow with nanosecond-scale turn-off delay.

Use Value: Delivers clean inversion with <1 µs propagation delay and rail-to-rail output swing due to low VCE(sat) and high hFE.

Use Scenario: Controlling LED arrays, small relays, or sensor bias networks from microcontroller GPIO pins with limited sink capability.

IC Role / Device Role / Timing Role: Active-low switch with emitter tied to VCC, collector driving load to ground; base driven by MCU output through current-limiting resistor.

Use Value: Enables reliable 100 mA load control using only 5 mA base current, minimizing MCU I/O loading and simplifying drive circuitry.

Analog Level Shifting Current Mirror Reference

Use Scenario: Translating ±5 V op-amp output signals to −12 V referenced domains in mixed-supply instrumentation front-ends.

IC Role / Device Role / Timing Role: PNP emitter follower stage providing bidirectional voltage translation while maintaining signal integrity and low output impedance.

Use Value: Achieves <0.5% gain error and <100 µV offset drift over −55 °C to +150 °C due to matched hFE and thermal stability.

Use Scenario: Building precision 1:1 current mirrors in analog sensor signal conditioning chains requiring matched transistor characteristics.

IC Role / Device Role / Timing Role: One half of a monolithic-matched pair (with identical BC857C die variant) used to replicate reference current with <2% mismatch across temperature.

Use Value: Leverages tight hFE binning (420–800) and low VBE variation (<50 mV) to maintain mirror accuracy without external trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC857B,215 hFE = 220–475 (lower gain range); identical VCEO, VCBO, and package. Less suitable for low-base-drive amplifier stages but adequate for saturated switching where gain margin is not critical. Select when cost sensitivity outweighs gain consistency requirements and base drive current is readily available.
MMBT3906LT1G VCEO = −40 V (5 V lower); hFE = 100–300 at IC = −10 mA; same SOT23 package and pinout. Not recommended for −45 V rail applications or high-gain bias networks; better suited for legacy designs with looser voltage margins. Choose only if redesign is constrained by legacy BOM or qualification requirements; verify VCEO derating in final system.

Compared with BC857C/DG/B3,215, BC857B offers reduced gain consistency at lower cost, while MMBT3906LT1G trades voltage headroom and gain for broader industry adoption - making BC857C optimal for new designs demanding precision low-current amplification or robust −45 V operation.

Availability

BC857C/DG/B3,215 is available at Aetrix Electronics and suitable for logic-level inversion, low-side load switching, analog level shifting, and current mirror reference applications requiring stable component supply and traceable sourcing.

Supply support for BC857C/DG/B3,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BC856/BC857/BC858 series targets cost-sensitive, space-constrained applications in consumer, industrial, and communications equipment where proven SOT23 reliability and parametric consistency are essential.

FAQ

What is the maximum ambient temperature for continuous operation of BC857C/DG/B3,215?

The device is rated for continuous operation from −65 °C to +150 °C ambient temperature. At Tamb = 25 °C, it dissipates up to 250 mW; derating is required above 25 °C at 3.3 mW/°C per the thermal resistance of 500 K/W on standard FR4 PCB.

Can BC857C/DG/B3,215 replace BC857A in an existing design?

Yes, but with caution: BC857C has higher hFE (420–800 vs. 125–250), which may increase base current demand in saturated switching or cause instability in high-gain amplifier feedback loops. Verify bias point shift and thermal margin before substitution.

Is BC857C/DG/B3,215 qualified for automotive applications?

No - this part is non-automotive qualified per Nexperia's Rev. 9 data sheet. Automotive-grade equivalents (e.g., BC857C-Q) require separate qualification and are marked with "-Q" suffix; use only those parts in AEC-Q101-compliant systems.

What is the typical transition frequency (fT) and under what conditions is it measured?

The typical fT is 100 MHz, measured at VCE = −5 V, IC = −10 mA, and f = 100 MHz. This value reflects small-signal high-frequency performance and remains usable up to ~10 MHz in practical switching or amplification circuits with proper layout.

BC857C/DG/B3,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
125 @ 2mA, 5V
Power - Max:
250 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

BC857C/DG/B3,215 FAQ

1.How can I place an order for BC857C/DG/B3,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857C/DG/B3,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857C/DG/B3,215 reliable?

The price and inventory of BC857C/DG/B3,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857C/DG/B3,215 is usually 5 days.

3.What payment methods are accepted for BC857C/DG/B3,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857C/DG/B3,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857C/DG/B3,215?

BC857C/DG/B3,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857C/DG/B3,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857C/DG/B3,215?

For technical support, including BC857C/DG/B3,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857C/DG/B3,215 requirements.

6.How does Aetrix verify that BC857C/DG/B3,215 is sourced from the original manufacturer or authorized distributors?

All BC857C/DG/B3,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857C/DG/B3,215 meets industry standards.

7.What is the process for return or replacement of BC857C/DG/B3,215?

All BC857C/DG/B3,215 units undergo pre-shipment inspection (PSI). If there is an issue with BC857C/DG/B3,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857C/DG/B3,215 part is unused and in its original packaging.

Return procedure for BC857C/DG/B3,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC857C/DG/B3,215 Tags

  • BC857C/DG/B3,215
  • BC857C/DG/B3,215 PDF
  • BC857C/DG/B3,215 Datasheet
  • BC857C/DG/B3,215 Specifications
  • BC857C/DG/B3,215 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BC857C/DG/B3,215
  • Buy BC857C/DG/B3,215
  • BC857C/DG/B3,215 Price
  • BC857C/DG/B3,215 Distributor
  • BC857C/DG/B3,215 Supplier
  • BC857C/DG/B3,215 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER