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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC857CQCZ

Name: BC857CQCZ
Brand: Nexperia USA Inc.
SKU: BC857CQCZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC857CQCZ

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-XDFN Exposed Pad

Datasheet:: BC857CQCZ.pdf

Description:: TRANS PNP 45V 0.1A DFN1412D-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC857CQCZ from Nexperia is a PNP general-purpose transistor in a DFN1412D-3 (SOT8009) leadless SMD package with side-wettable flanks, rated for −45 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 420–800 at V_CE = −5 V and I_C = −2 mA. It serves as a compact, high-reliability switching and amplification device in space-constrained consumer and industrial PCBs.

For engineers reviewing the BC857CQCZ datasheet, BC857CQCZ pinout, BC857CQCZ application, or BC857CQCZ equivalent, this page delivers verified package dimensions, thermal derating curves, saturation voltage behavior across temperature, AOI-compatible solder joint geometry, and direct alternatives with validated h_FE and V_CEsat trade-offs.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined absolute maximum ratings: −50 V V_CBO, −6 V V_EBO, and 450 mW P_tot on 70 µm FR4 copper. Its low 0.48 mm body height and 1.4 mm × 1.2 mm footprint enable ultra-dense routing in portable electronics.

Thermal resistance R_th(j-a) is 278 K/W on optimized FR4 (70 µm Cu), supporting stable operation up to 150 °C junction temperature. Transient thermal impedance data confirms suitability for pulsed switching up to 200 mA peak collector current (t_p ≤ 1 ms).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum safe collector-emitter voltage with base open; defines off-state blocking capability in high-side switch configurations.
I_C	−100 mA - Continuous DC collector current rating; sets upper limit for steady-state load switching in signal-level applications.
h_FE	420–800 @ V_CE = −5 V, I_C = −2 mA - High DC current gain enables low-base-drive designs, reducing MCU GPIO loading in discrete amplifier stages.
V_CEsat	−650 mV @ I_C = −100 mA, I_B = −5 mA - Low saturation voltage minimizes power loss and self-heating in saturated-switching applications like LED drivers.
Package	DFN1412D-3 (SOT8009) - 1.4 mm × 1.2 mm × 0.48 mm leadless package with side-wettable flanks for automated optical inspection (AOI) and reliable reflow soldering.
P_tot	450 mW @ T_amb ≤ 25 °C on 70 µm FR4 - Total power dissipation limit determines thermal margin in sealed enclosures or stacked PCB assemblies.
f_T	100 MHz @ V_CE = −5 V, I_C = −10 mA - Transition frequency supports small-signal amplification up to low-VHF bands in RF front-end bias networks.

Pinout & Package

DFN1412D-3 (SOT8009) is a 3-terminal, leadless plastic package with side-wettable flanks, measuring 1.4 mm × 1.2 mm × 0.48 mm and featuring a 0.8 mm pitch. Its low-profile construction (0.5 mm max height) and exposed thermal pad design support high-density placement and thermal management on standard FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on.
2	Emitter (E)	Current source terminal in PNP configuration; connected to higher potential rail in high-side switch topologies.
3	Collector (C)	Current sink terminal; tied to load or lower-potential node; handles full switched current with defined V_CEsat and thermal limits.

Key Features

Feature	Design Value
Side-wettable flanks	Enables automated optical inspection (AOI) of solder joints without X-ray, improving manufacturing yield in high-volume SMT lines.
Ultra-small footprint	1.4 mm × 1.2 mm area reduces PCB real estate by >50% vs. conventional SOT23, critical for wearables and miniaturized IoT sensors.
Low package height	0.48 mm nominal body height allows stacking under shields or in ultra-thin modules where Z-axis clearance is constrained.
High h_FE bin (C-grade)	420–800 gain range ensures consistent base drive requirements across production lots, simplifying bias network design for amplifiers.
Thermal robustness	R_th(j-a) = 278 K/W on 70 µm FR4 enables sustained 100 mA operation without heatsinking in ambient temperatures up to 70 °C.

Applications

LED Current Switching

Level-Shifting Interface

Use Scenario: Driving discrete indicator LEDs or low-power backlight segments from 3.3 V or 5 V microcontroller GPIOs.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter topology, sinking current from LED anode to ground via collector.

Use Value: −650 mV V_CEsat at −100 mA ensures <10 mW conduction loss per LED channel, minimizing thermal rise in dense LED arrays.

Use Scenario: Translating logic signals between 5 V legacy peripherals and 3.3 V microcontrollers in mixed-voltage embedded systems.

IC Role / Device Role / Timing Role: Discrete level shifter using PNP emitter-follower configuration to invert and shift voltage thresholds.

Use Value: 420–800 h_FE guarantees stable DC biasing across temperature, enabling reliable 5 V → 3.3 V translation without external pull-ups.

Low-Power Sensor Biasing

Compact Audio Preamp Stage

Use Scenario: Providing stable bias current to analog sensor elements (e.g., thermistors, photodiodes) in battery-powered environmental monitors.

IC Role / Device Role / Timing Role: Constant-current source built around emitter-degenerated PNP configuration with precision resistor feedback.

Use Value: Tight V_BE variation (±2 mV/K) and low I_CBO (<5 µA at 150 °C) maintain sensor excitation accuracy over −40 °C to +85 °C operating range.

Use Scenario: Single-transistor preamplifier stage for electret microphone outputs in voice-enabled edge devices.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with capacitive coupling and emitter degeneration for gain stability.

Use Value: 100 MHz f_T and 10 pF C_e support flat frequency response up to 20 kHz, meeting full audio bandwidth requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857C,060 (SOT23)	Same h_FE (420–800) and V_CEO (−45 V), but larger SOT23 package (2.9 mm × 1.3 mm) and no side-wettable flanks.	Compatible for prototyping or low-volume builds where AOI is not required and board space permits larger footprint.	Select when legacy footprint compatibility or hand-soldering is prioritized over miniaturization and automated inspection.
MMBT3906LT1G	Lower h_FE (100–300), identical V_CEO (−40 V), same SOT23 package; higher V_CEsat (−700 mV typical at −10 mA).	Suitable for cost-sensitive, non-critical switching where gain consistency and low saturation loss are secondary.	Choose for budget-driven consumer products where moderate performance and wide distributor availability outweigh precision requirements.

Compared with BC857CQCZ, BC857C,060 offers identical electrical performance in a less compact, non-AOI-optimized package, while MMBT3906LT1G trades gain and saturation voltage for broader supply chain access and lower unit cost-making BC857CQCZ optimal for space- and reliability-critical designs requiring AOI validation.

Availability

BC857CQCZ is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, low-power sensor biasing, and compact audio preamp stages requiring stable component supply, tight parametric consistency, and AOI-compatible packaging.

Supply support for BC857CQCZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, delivering discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The BC857xQC series belongs to Nexperia's general-purpose transistor product line, engineered specifically for miniaturized, AOI-ready SMT applications demanding consistent h_FE, low V_CEsat, and thermal resilience in ultra-small packages.

FAQ

What is the maximum continuous collector current for BC857CQCZ?

The BC857CQCZ is rated for −100 mA continuous collector current (I_C) at T_amb ≤ 25 °C on a standard FR4 PCB with 70 µm copper. Derating applies above 25 °C ambient per the published power derating curve, reaching zero allowable dissipation at 150 °C junction temperature.

Does BC857CQCZ support automatic optical inspection (AOI)?

Yes-its DFN1412D-3 (SOT8009) package features side-wettable flanks, enabling reliable solder-joint inspection using standard AOI systems without requiring X-ray. This is confirmed in Nexperia's official product data sheet Rev. 1 (2021-10-27), Section 2.

How does the h_FE of BC857CQCZ compare to BC857BQC and BC857AQC?

BC857CQCZ has h_FE = 420–800 at V_CE = −5 V and I_C = −2 mA, versus 220–475 for BC857BQC and 125–250 for BC857AQC. This graded binning allows designers to select precise gain characteristics for bias stability, amplifier linearity, or low-base-drive requirements.

What is the thermal resistance from junction to ambient (R_th(j-a)) for BC857CQCZ?

R_th(j-a) is 278 K/W when mounted on an FR4 PCB with single-sided 70 µm copper and standard footprint, per Table 7 of the Nexperia datasheet. With 35 µm copper, it rises to 348 K/W-designers must select copper weight based on target power dissipation and ambient temperature constraints.

BC857CQCZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: BC857xQC

Package/Case:: 3-XDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 850mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 420 @ 2mA, 5V

Power - Max:: 360 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: DFN1412D-3

BC857CQCZ FAQ

1.How can I place an order for BC857CQCZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857CQCZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857CQCZ reliable?

The price and inventory of BC857CQCZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857CQCZ is usually 5 days.

3.What payment methods are accepted for BC857CQCZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857CQCZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857CQCZ?

BC857CQCZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857CQCZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857CQCZ?

For technical support, including BC857CQCZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857CQCZ requirements.

6.How does Aetrix verify that BC857CQCZ is sourced from the original manufacturer or authorized distributors?

All BC857CQCZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857CQCZ meets industry standards.

7.What is the process for return or replacement of BC857CQCZ?

All BC857CQCZ units undergo pre-shipment inspection (PSI). If there is an issue with BC857CQCZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857CQCZ part is unused and in its original packaging.

Return procedure for BC857CQCZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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