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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. BC857C-QR

Name: BC857C-QR
Brand: Nexperia USA Inc.
SKU: BC857C-QR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC857C-QR

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BC857C-QR.pdf

Description:: TRANS PNP 45V 0.1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,750

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Product details

Overview

BC857C-Q from Nexperia is a PNP general-purpose transistor in SOT23 (TO-236AB) package, rated for −45 V V_CEO, −100 mA I_C, and DC current gain (h_FE) of 420–800 at V_CE = −5 V and I_C = −2 mA. It serves as a low-voltage, low-current switching or amplification device in automotive signal conditioning and power management circuits.

For engineers reviewing the BC857C-Q datasheet, BC857C-Q pinout, BC857C-Q application, or BC857C-Q equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (500 K/W), saturation voltage (V_CEsat ≤ −650 mV at I_C = −100 mA), and precise pin mapping for reliable schematic capture and PCB layout.

Technical Context

This PNP bipolar junction transistor operates with an emitter-base breakdown voltage of −5 V and collector-base breakdown voltage of −50 V, supporting robust operation under reverse-biased conditions typical in automotive load-switching topologies. Its h_FE range ensures stable biasing across temperature (−55 °C to +150 °C) and current (−2 mA to −100 mA).

The device exhibits V_BEsat ≤ −850 mV at I_C = −100 mA / I_B = −5 mA and transition frequency f_T ≥ 100 MHz, enabling use in moderate-speed digital switching and analog amplification where predictable gain and low saturation loss are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V: Maximum safe collector-emitter voltage with base open; defines upper rail limit in PNP switch configurations.
I_C	−100 mA: Continuous collector current rating; sets maximum load drive capability in linear or saturated operation.
h_FE	420–800 @ V_CE = −5 V, I_C = −2 mA: Guaranteed DC current gain range for stable bias network design and gain predictability.
V_CEsat	≤ −650 mV @ I_C = −100 mA, I_B = −5 mA: Low saturation voltage minimizes conduction loss in high-side switch applications.
P_tot	250 mW @ T_amb ≤ 25 °C on FR4 PCB: Thermal power limit defining heatsinking requirements for continuous operation.
R_th(j-a)	500 K/W: Junction-to-ambient thermal resistance on standard single-sided FR4; determines temperature rise under load.
f_T	≥ 100 MHz @ V_CE = −5 V, I_C = −10 mA: Transition frequency enabling use in audio-frequency amplifiers and fast digital switching.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; compact footprint (2.8 mm × 1.4 mm × 1.1 mm) optimized for high-density automotive PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal; forward-biased with negative voltage relative to emitter to enable conduction.
2	Emitter (E)	Current source terminal; connected to higher potential rail in high-side switch configurations.
3	Collector (C)	Current sink terminal; delivers load current to ground or lower-potential node when saturated.

Key Features

Feature	Design Value
AEC-Q101 qualified	Qualified per Automotive Electronics Council stress test standard; supports deployment in engine control, body electronics, and ADAS modules.
Low V_CEsat	≤ −650 mV enables <1.3% voltage drop at 100 mA load-critical for battery-powered systems with tight headroom.
Wide h_FE range	420–800 allows consistent switching behavior across production lots without recalibrating base drive resistors.
High f_T	≥ 100 MHz supports clean edge response in PWM dimming drivers and sensor interface preamplifiers.
Robust thermal rating	150 °C max junction temperature and 500 K/W R_th(j-a) support operation in under-hood environments without forced cooling.

Applications

Automotive Door Module

LED Tail Light Driver

Use Scenario: Controlling window lock/unlock solenoids and mirror actuator signals in centralized door control units.

IC Role / Device Role / Timing Role: PNP switch providing high-side drive for 12 V inductive loads with integrated flyback protection.

Use Value: −45 V V_CEO withstands load-dump transients up to ISO 7637-2 Pulse 5a; −650 mV V_CEsat limits heat generation during 100 ms activation bursts.

Use Scenario: Current-regulated switching for brake/tail LED strings in rear lighting assemblies.

IC Role / Device Role / Timing Role: Saturated PNP switch enabling PWM-controlled current sourcing to LED anodes.

Use Value: 420–800 h_FE ensures stable current mirroring across temperature; 100 MHz f_T preserves PWM fidelity up to 20 kHz.

Engine Control Unit Sensor Interface

Industrial PLC Input Conditioning

Use Scenario: Level-shifting and buffering of analog sensor outputs (e.g., coolant temperature, MAP) before ADC sampling.

IC Role / Device Role / Timing Role: Common-emitter amplifier stage providing gain and impedance transformation.

Use Value: −5 V V_EBO and −50 V V_CBO prevent breakdown during ESD events on exposed harness connectors.

Use Scenario: Isolating 24 V field inputs to 3.3 V logic in programmable logic controller input modules.

IC Role / Device Role / Timing Role: High-side level translator converting industrial voltage thresholds to microcontroller-compatible signals.

Use Value: AEC-Q101 qualification ensures reliability in harsh factory environments; 250 mW P_tot supports continuous 24 V/10 mA operation with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847C-Q	NPN complement; identical h_FE (420–800), same package, but opposite polarity.	Requires inverted circuit topology (low-side vs. high-side switching); not drop-in replaceable.	Select only when redesigning for NPN-driven loads or complementary pair configurations.
MMBT3906	Same V_CEO (−40 V), lower h_FE (100–300), higher V_CEsat (≤ −400 mV @ I_C = −50 mA).	Less suitable for precision current gain stability or high-efficiency 100 mA switching.	Prefer BC857C-Q where guaranteed h_FE > 420 and V_CEsat < −600 mV are required.

Compared with BC847C-Q and MMBT3906, BC857C-Q uniquely combines AEC-Q101 qualification, high h_FE consistency, and low V_CEsat in a miniature SOT23 package-making it optimal for automotive-grade high-side switching where gain stability and thermal efficiency are critical.

Availability

BC857C-Q is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, and industrial sensor interface circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for BC857C-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

The BC857C-Q belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, engineered specifically for cost-sensitive, space-constrained automotive and industrial switching applications demanding proven reliability and parametric consistency.

FAQ

Is BC857C-Q suitable for automotive applications?

Yes. BC857C-Q is fully qualified to AEC-Q101 standards for stress testing of discrete semiconductors and explicitly recommended by Nexperia for automotive use. Its 150 °C junction rating, −45 V V_CEO, and robust thermal resistance (500 K/W) meet under-hood environmental requirements.

What is the marking code for BC857C-Q on the package?

The top-side marking for BC857C-Q is "3G%", where "%" is a placeholder for the manufacturing site code. This matches Table 5 in the official Nexperia datasheet Rev. 2 (21 February 2022) and distinguishes it from BC857A-Q ("3E%") and BC857B-Q ("3F%").

How does BC857C-Q differ from BC857B-Q?

BC857C-Q has a higher guaranteed h_FE range (420–800 vs. 220–475 for BC857B-Q) at V_CE = −5 V and I_C = −2 mA. Both share identical V_CEO (−45 V), I_C (−100 mA), and package (SOT23), making C-grade preferred where tighter gain control or higher current gain is needed.

Can BC857C-Q be used in linear amplification mode?

Yes. With its specified h_FE, V_BE (−650 to −750 mV), and f_T ≥ 100 MHz, BC857C-Q supports Class-A and Class-AB small-signal amplification. However, its 250 mW power dissipation limit requires careful thermal design for continuous linear operation above ~50 mA collector current.

BC857C-QR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 420 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BC857C-QR FAQ

1.How can I place an order for BC857C-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for BC857C-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC857C-QR reliable?

The price and inventory of BC857C-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC857C-QR is usually 5 days.

3.What payment methods are accepted for BC857C-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC857C-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC857C-QR?

BC857C-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC857C-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC857C-QR?

For technical support, including BC857C-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC857C-QR requirements.

6.How does Aetrix verify that BC857C-QR is sourced from the original manufacturer or authorized distributors?

All BC857C-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC857C-QR meets industry standards.

7.What is the process for return or replacement of BC857C-QR?

All BC857C-QR units undergo pre-shipment inspection (PSI). If there is an issue with BC857C-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC857C-QR part is unused and in its original packaging.

Return procedure for BC857C-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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